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| Search for novel electronic properties based on the electron-electron correlation by means of MBE growth |
Molecular beam epitaxy(MBE) has the capability of manipulating electron wavefunctions with its precise control of material structures on the atomic scale. Because of this capability, MBE has been widely utilized for developments of semiconductor devices which exhibit transport and optoelectronic properties based on quantum effects. Such devices include high electron mobility transistors, resonant tunneling diodes and quantum well lasers. These transport and optoelectronic properties are primarily based on behaviors of individual electrons. As a new direction
departing from these conventional MBE studies, we are carrying out a research aimed at developing semiconductor structures which exhibit novel electronic properties based on the electron-electron correlation such as magnetic and superconducting properties.
With this approach we have recently obtained the following two results. |
| (i)Metal-insulator transition which occurs at room temperature in a quasi-two-dimensional hole system of GaAs. |
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J. P. Noh, F. Shimogishi, and N. Otsuka, Phys. Rev. B 67, 075309(2003). |
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J. P. Noh, F. Shimogishi, Y. Idutsu, and N. Otsuka, Phys. Rev. B 69, 045321(2004). |
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| (ii)Formation of localized spins by delta-doping of non-magnetic dopant impurities in GaAs. |
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Y. Idutsu, J. P. Noh, F. Shimogishi, and N. Otsuka, Phys. Rev. B, 73, 115306(2006). |
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