MIZUTA Laboratory
<Major Research Areas>Nano Device Physics, NEMS, Quantum Information Technology, Multi-scale Material & Device Simulation

Hybrid Nanoelectronics and Atom-scale Devices - Emerging Nanotechnologies for 'More-than-Moore' and 'Beyond CMOS' Era

Research activity

1Hybrid NEMS (Nano-Electro-Mechanical Systems) functional devices

　　Novel hybrid functional devices ? abrupt switch, nonvolatile memory and nanosensor - are developed by co-integrating NEMS and conventional devices such as MOSFET and single-electron transistors.. Nanoscale phononic engineering is also explored for Beyond CMOS device applications.

2Extremely-scaled devices based on graphene and ultrathin silicon

　　Atomscale materials such as graphene ? single carbon atom layer and ultrathin SOI (silicon-on-insulator) are used to fabricate ultrasmall transistors and NEMS and their extreme characteristics are unveiled.

3Single electron / spin based quantum information technology

　　Single-electron spin based quantum information technology is developed by integrating multiple quantum dots, a nano magnet, a nano electron-spin-resonance (EMR) device and a readout on the Si and graphene platform with a long spin decoherence time.

4Atom-scale simulation of nano materials and devices

　　Extremely-scaled transistors and graphene devices are studied by using large-scale atom-scale simulation based on the density functional theory (DFT) and nonequilibrium quantum transport theory.

Equipment

Electron beam lithography, focused ion beam system, Helium ion microscope, Cryogenic and RF probe station, He3 cryostat, ab initio quantum transport simulator, MEMS/CMOS hybrid circuit simulator @ UK Southampton laboratory. More facilities to be introduced @ JAIST Lab.

The main research achievements in the past five years

1. Z. Moktadir, S.A. Boden, A. Ghiass, H. Rutt and H. Mizuta, A U-shaped bilayer graphene channel transistor with a very high Ion/Ioff ratio, Electronics Letts. 47(3) 199-200 (2011)
2. M. A. G.-Ramirez, Y. Tsuchiya and H. Mizuta, Hybrid circuit analysis of a suspended-gate silicon nanodot memory (SGSNM) cell, Microelectronics Engineering 87, 1284-1286 (2010)
3. Y. Kawata, Y. Tsuchiya, S. Oda and H. Mizuta, Study of single-charge polarization on a pair of charge qubits integrated onto silicon double single-electron transistor readout, IEEE Trans. Nanotechnology 7, 617-623 (2008)
4. M. Manoharan, Y. Tsuchiya, S. Oda and H. Mizuta, SOI-based radio-frequency single-electron transistors operating at temperatures above 4.2 K, Nano Lett. 8, 4648-4652 (2008)
5. H. Mizuta, S. Oda, S. Uno, N. Mori and N. Koshida, Electron transport in nanocrystalline silicon, Device Applications of Silicon Nanocrystals and Nanostructures (Nanostructure Science and Technology), N. Koshida ed., 197-222, Springer, (2008)