2015年

  • Takashi Masuda, Akira Iwasaka, Hideyuki Takagishi, Tatsuya Shimoda, Polymeric precursor for solution-processed amorphous silicon carbide, J. Mater. Chem. C 3 (2015) 12212. (Inside back cover)
  • Takashi Masuda, Hideyuki Takagishi, Zhongrong Shen, Keisuke Ohdaira, Tatsuya Shimoda, Phosphorus- and boron-doped hydrogenated amorphous silicon films prepared using vaporized liquid cyclopentasilane, Thin Solid Films 589 (2015) 221.
  • Hiroko Murayama, Tatushi Ohyama, Isao Yoshida, Akira Terakawa, Takashi Masuda, Keisuke Ohdaira, Tatsuya Shimoda, Photo-stability of a-Si solar cells fabricated by “liquid-Si printing method” and treated with catalytic generated atomic hydrogen, Thin Solid Films 575 (2015) 100.
  • Zhongrong Shen, Takashi Masuda, Hideyuki Takagishi, Keisuke Ohdaira, and Tatsuya Shimoda, Fabrication of high-quality amorphous silicon film from cyclopentasilane by vapor deposition between two parallel substrates, Chem. Commun., 51 (2015) 4417.
  • Yoshitaka Murakami, Jinwang Li, Daisuke Hirose, Shinji Kohara, Tatsuya Shimoda, Solution processing of highly conductive ruthenium and ruthenium oxide thin films from ruthenium–amine complexes, J. Mater. Chem C 3 (2015) 4490.
  • Satoshi Inoue, Tue Trong Phan, Tomoko Hori, Hiroaki Koyama, Tatsuya Shimoda, Electrophoretic displays driven by all-oxide thin-film transistor backplanes fabricated using a solution process, Phys. stat. solid (a), 212 (2015) 2133 (back cover).
  • Yoshitaka Murakami, Jinwang Li, Tatsuya Shimoda, Highly conductive ruthenium oxide thin films by a low-temperature solution process and greenlaser annealing,Mater. Lett. 152 (2015) 121.
  • Huynh Thi Cam Tu, Satoshi Inoue, Kiyoshi Nishioka, Nobutaka Fujimoto, Shuichi Karashima, Tatsuya Shimoda, Fabrication of Source and Drain Regions of Self-Aligned Thin-Film Transistor Using a Solution of Tin and Polypropylene Carbonate, Japan. J. Appl. Phys. 54 (2015) 106501.
  • Tomoki Ariga, Satoshi Inoue, Shin Matsumoto, Masatoshi Onoue, Takaaki Miyasako, Eisuke Tokumitsu, Tatsuya Shimoda, High Relative Dielectric Constant Bismuth-Niobium-Oxide Films Prepared Using Nb-rich Precursor Solution, Japan. J. Appl. Phys. 54 (2015) 091501.
  • Miki Trifunovic, Tatsuya Shimoda, Rhoichi Ishihara, Solution-processed polycrystalline silicon on paper, Appl. Phys. Lett. 106 (2015) 163502.
  • Mohd Asyadi Azam, Kazuki Isomura, Syahriza Ismail, Tatsuya Shimoda, Electrically conductive aluminum oxide thin film used as cobalt catalyst-support layer in vertically aligned carbon nanotube growth, Adv. Nat. Sci.: Nanosci. Nanotechnol. 6 (2015) 045008.