論文 (Refereed Journal Articles)

1. “Indium oxide and indium-tin-oxide channel ferroelectric gate thin film transistors with yttrium doped hafnium-zirconium dioxide gate insulator prepared by chemical solution process”
   Mohit, Takaaki Miyasako, and Eisuke Tokumitsu,
   Japanese Journal of Applied Physics, Vol. 60, SBBM02 (2021)
   論文 (Article)
2. “Thermal stability of ferroelectricity in hafnium–zirconium dioxide films deposited by sputtering and chemical solution deposition for oxide-channel ferroelectricgate transistor applications”
   Mohit, Shinji Migita, Hiroyuki Ota, Yukinori Morita, and Eisuke Tokumitsu,
   Applied Physics Express, Vol. 14, 041006 (2021)
   論文 (Article)
3. “Impact of reduced pressure crystallization on ferroelectric properties in hafnium-zirconium dioxide films deposited by sputtering”
   Yuki Hara, Mohit, Shinji Migita, Hiroyuki Ota, Yukinori Morita, and Eisuke Tokumitsu,
   Japanese Journal of Applied Physics, Vol. 60, SFFB05 (2021)
   論文 (Article)

国際学会 (International Conference)

1. “Preparation of ferroelectric lanthanum doped hafnium-zirconium oxide thin films by solution process”
   Mohit and Eisuke Tokumitsu,
   The 8th International Symposium on Organic and Inorganic Materials and Related Nanotechnologies (EM-NANO 2021), June 1- 3, Online, paper B2-3-1
2. “DNA biosensing using Indium Oxide thin film transistor with HfO₂ as gate insulator prepared by solution process”
   Mohit, Daisuke Hirose, Eisuke Tokumitsu and Yuzuru Takamura,
   European Materials Research Society, Spring Meeting 2021, May 31-June4, 2021. Online, paper P3-26.

国内学会 (Domestic Conference)

1. “Fabrication of ferroelectric gate thin film transistors using CSD Y-HZO and sputtered HZO with sputtered ITO channel”
   Mohit，Eisuke Tokumitsu,
   第68回応用物理学会春季学術講演会 (The 68th JSAP Spring Meeting) 2021年3月16日~19日, 16p-Z26-13 オンライン
   口頭発表 (Oral)
2. “スパッタHf-Zr-O膜における強誘電性の安定性向上”
   原　佑樹,　モヒート,　右田　真司 ,　太田 裕之,　森田 裕史,　徳光 永輔,
   第38回強誘電体会議(FMA-38)、2021年6月1日～4日 オンライン 口頭発表 (Oral)