MURUGANATHAN, Manoharan （ムルガナタン　マノハラン）　助教
マテリアルサイエンス研究科（マテリアルサイエンス専攻・物性解析・デバイス領域）

■学位

B.E. from Bharathiar University(2000), Master of Technology from Indian Institute of Technology Kanpur(IIT Kanpur)(2005), Ph.D. from Tokyo Institute of Technology(2008)

■職歴

Assistant Professor at Easwari Engineering College(2009-2010), Visiting Assistant Professor at Indian Institute of Information Technology Design and Manufacturing(IIITD&M)(2010-2012)

■専門分野

Nanoelectronics, Atomic-scale Device Simulation, Extremely-scaled Devices

■研究テーマのキーワード

Nanoelectronics, Ab-initio simulation, RF and Cryogenic measurements

■研究業績

◇発表論文

Silicon-on-Insulator-Based Radio Frequency Single-ElectronTransistors Operating at Temperatures above 4.2 K，M. Manoharan, Yoshishige Tsuchiya, Shunri Oda, and Hiroshi Mizuta，Nano Lett，8　(12)，4648，2008
Impact of channelconstrictions on the formation of multiple tunnel junctions in heavily-doped silicon SETs，M. Manoharan, Shunri Oda, and Hiroshi Mizuta，Applied Physics Letters，93，112107，2008
Impact of key circuit parameters on signal-to-noise ratio characteristics for the radio-frequency single electron transistors，M. Manoharan, Benjamin Pruvost, Hiroshi Mizuta, and Shunri Oda，IEEE Transactions on Nanotechnology，7，266，2008

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◇講演発表

Transport Characteristics of Nanoconstricted Graphene with and without point defects，Deepak S., Hiroshi Mizuta, Manoharan M.，International Conference on Nano Science, Engineering and Technology，India，2011
Silicon radio frequency single-electron transistors operating at above 4.2 K，M. Manoharan, Y. Tsuchiya S. Oda and H. Mizuta，International Conference on Solid State Devices and Materials，Ibaraki，2008
Is it possible to avoid uncontrolled multiple tunnel junctions induced by random dopants in heavily-doped silicon single-electron transistors?，M. Manoharan, Y. Tsuchiya S. Oda and H. Mizuta，IEEE SILICON NANOELECTRONICS WORKSHOP，Hawaii，2008