Masashi Akabori Associate Professor
Center for Nano Materials and Technology

■Degrees

B.E. from Hokkaido University (1995), M.E. from Hokkaido University (1997), Ph.D. from Hokkaido University (2000)

■Professional Career

Research fellow of the Japan Society for the Promotion of Science [DC1] (1997.4-2000.3), Research fellow of the Japan Society for the Promotion of Science [PD] (2000.4-2002.2), Research associate at Japan Advanced Institute of Science and Technology (2002.2-2007.3), Assistant Professor (2007.4-2013.1), Research fellow abroad of the Japan Society for the Promotion of Science (2007.2-2009.1), Associate Professor (2013.2-)

■Specialties

Epitaxial growth of III-V compound semiconductors, Formation and characterization of III-V based nanostructures

■Research Keywords

compound semiconductors, epitaxial growth, nanostructures

■Research Interests

Nanostructure fabrication using epitaxial growth
We form compound semiconductor thin films and fine nanostructures using epitaxial growth techniques such as molecular beam epitaxy (MBE) and metal-organic vapor phase epitaxy (MOVPE).
Nanostructure fabrication with lithography
We fabricate compound semiconductor nanostructures using nano-lithography techniques, and we apply them to novel semiconductor functional devices.
Characterization of nanostructures
We characterize electrical and optical properties of compound semiconductor nanostructures to find novel phenomena which are applicable to new information technologies.

■Publications

◇Published Papers

Verification of electrical spin injection into InGaAs two-dimensional electron gas from CoFe electrode by four-terminal non-local geometry，S. Hidaka, T. Kondo, M. Akabori, and S. Yamada，accepted for publication in AIP Conf. Proc.
Magneto-transport properties of InAs nanowires laterally-grown by selective area molecular beam epitaxy on GaAs (110) masked substrates，M. Akabori and S. Yamada，accepted for publication in AIP Conf. Proc.
Realization of In0.75Ga0.25As two-dimensional electron gas bilayer system for spintronics devices based on Rashba spin-orbit interaction，M. Akabori, S. Hidaka, H. Iwase, S. Yamada, and U. Ekenberg，J. Appl. Phys，Vol. 112，pp. 113711-1-6，2012

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◇Lectures and Presentations

Low temperature anisotropic transport and related structure analysis in InGaAs two-dimensional electron gas bilayer system，W. Wei, S. Hidaka, H. Iwase, M. Akabori, S. Yamada, H. Hirayama, and Y. Suzuki，the 17th International Conference on Molecular Beam Epitaxy, Nara Japan, September 23-28 (2012).
Electron mobility anisotropy in InAs/GaAs(001，S. P. Le, M. Akabori, and T. Suzuki，the 17th International Conference on Molecular Beam Epitaxy, Nara Japan, September 23-28 (2012).
Anomalous cyclotron resonance in InGaAs/InAlAs Rashba systems，Y. Imanaka, T. Takamasu, S. Nitta, M. Akabori, and S. Yamada，the 31st International Conference on the Physics of Semiconductors, Zurich, Switzerland, July 29-August 3 (2012).