AKABORI, Masashi Associate Professor
Materials Science, Nanomaterials and Devices, Research Center for Empathetic and Symbiotic Technology with Nature, Center for Nano Materials and Technology
◆Degrees
B.E. from Hokkaido University (1995), M.E. from Hokkaido University (1997), Ph.D. from Hokkaido University (2000)
◆Professional Experience
1997 - 2000 : 日本学術振興会特別研究員DC1(1997-2000), 日本学術振興会特別研究員PD(2000-2002)
1997 - 2000 : Research fellow of the Japan Society for the Promotion of Science [DC1] (1997-2000), Research fellow of the Japan Society for the Promotion of Science [PD] (2000-2002)
◆Specialties
Electric/electronic material engineering
◆Research Keywords
nanostructures, epitaxial growth, compound semiconductors
◆Research Interests
Nanostructure fabrication with lithography
We fabricate compound semiconductor nanostructures using nano-lithography techniques, and we apply them to novel semiconductor functional devices.
Characterization of nanostructures
We characterize electrical and optical properties of compound semiconductor nanostructures to find novel phenomena which are applicable to new information technologies.
Nanostructure fabrication using epitaxial growth
We form compound semiconductor thin films and fine nanostructures using epitaxial growth techniques such as molecular beam epitaxy (MBE) and metal-organic vapor phase epitaxy (MOVPE).

■Publications

◆Published Papers
Promotion of the structural repair of graphene oxide thin films by thermal annealing in water-ethanol vapor
Ryota Negishi, Takuya Nakagiri, Masashi Akabori, Yoshihiro Kobayashi
Thin Solid Films, 775, 139841-139841, 2023
Tailoring Magnetic Domains and Magnetization Switching in CoFe Nanolayer Patterns with Their Thickness and Aspect Ratio on GaAs (001) Substrate
Keigo Teramoto, Ryoma Horiguchi, Wei Dai, Yusuke Adachi, Masashi Akabori, Shinjiro Hara
physica status solidi (b), 2100519-2100519, 2022
Room-temperature negative magnetoresistance of helium-ion-irradiated defective graphene in the strong Anderson localization regime
Takuya Iwasaki, Shu Nakamura, Osazuwa G. Agbonlahor, Manoharan Muruganathan, Masashi Akabori, Yoshifumi Morita, Satoshi Moriyama, Shinichi Ogawa, Yutaka Wakayama, Hiroshi Mizuta, Shu Nakaharai
Carbon, 175, 87-92, 2021
One-pot synthesis of manganese oxide/graphene composites via a plasma-enhanced electrochemical exfoliation process for supercapacitors
Minh Nhat Dang, Thanh Hai Nguyen, To Van Nguyen, Tran Viet Thu, Hoang Le, Masashi Akabori, Nobuaki Ito, Hai Yen Nguyen, Trong Lu Le, Tuan Hong Nguyen, Van Thao Nguyen, Ngoc Hong Phan
Nanotechnology, 31, 34, 345401-345401, 2020
Epitaxial growth and characterization of Cr-doped ZnSnAs2 thin films on InP substrates
Hiroto Oomae, Kai Sato, Miyuki Shinoda, M. I. Faris bin Ishak, Hideyuki Toyota, Masashi Akabori, Hidetoshi Kizaki, Shinichi Nakamura, Joel T. Asubar, Naotaka Uchitomi
Japanese Journal of Applied Physics, 59, 3, 030601-030601, 2020
◆Misc
Turbostratic Stacking Effect in Multilayer Graphene on the Electrical Transport Properties
Ryota Negishi, Chaopeng Wei, Yao Yao, Yui Ogawa, Masashi Akabori, Yasushi Kanai, Kazuhiko Matsumoto, Yoshitaka Taniyasu, Yoshihiro Kobayashi
physica status solidi (b), 257, 2, 1900437-1900437, 2020
Aspect Ratio Dependence of Magnetization Switching in CoFe Nanolayers Patterned on GaAs (001) Substrates
R. Horiguchi, K. Teramoto, Y. Adachi, M. Akabori, S. Hara
Collected Abstract of the 8th International Symposium on Control of Semiconductor Interfaces (ISCSI-VIII), Sendai, Japan, November 27-30, 2019, WP2-20., 53-54, 2019
Thickness and Aspect Ratio Dependences of Magnetic Domain Structures in Patterned CoFe Thin Films on GaAs (001) Substrates
K. Teramoto, R. Horiguchi, Y. Adachi, M. Akabori, S. Hara
Collected Abstract of the 2019 International Conference on Solid State Devices and Materials (SSDM 2019), Nagoya, Japan, September 2-5, 2019, PS-8-20., 1-2, 2019
STEMモアレフリンジ法によるInP/InGaAs界面歪み分布計測
陳桐民, 大島義文, 赤堀誠志
応用物理学会春季学術講演会講演予稿集(CD-ROM), 66th, -, 2019
STEM Moire法によるInP/InGaAs/InP構造の歪みと組成分布の評価
CHEN T, 赤堀誠志, 大島義文
応用物理学会秋季学術講演会講演予稿集(CD-ROM), 80th, -, 2019
◆Conference Activities & Talks
Sheet Electron Density Dependence of Electron Mobility Anisotropy in In0.75Ga0.25As/InP Two-Dimensional Electron Gas
2016 Compound Semiconductor Week, MoP-ISCS-060, Toyama, Japan, June 26-30 (2016)., 2016
Subband transport and quantum Hall effect in InGaAs/InAlAs 2DEG bilayer with surface inversion layer
9th International Conference on Physics and Applications of Spin-Related Phenomena in Solids, P1-24, Kobe, Japan, August 8-11 (2016)., 2016
Measurement of resonant spin Hall effect in InGaAs 2DEG bilayer system
9th International Conference on Physics and Applications of Spin-Related Phenomena in Solids, P2-13, Kobe, Japan, August 8-11 (2016)., 2016
GaAs barrier insertion into MnAs/InAs hybrid heterostructures on GaAs(111)B for lateral spin valve device application
第77回応用物理学会学術講演会、13p-P8-41、新潟、9/13-16 (2016)., 2016
Selective area growth of well-ordered ZnO nanowires on (111) oriented masked substrates by electrochemical method
第77回応用物理学会学術講演会、15a-P9-6、新潟、9/13-16 (2016)., 2016

■Teaching Experience

Solid State Physics Ⅱ, Fabrication of Nano-Devices with Training Course, 固体物理学特論Ⅱ, ナノデバイス加工論(実習付)

■Contributions to  Society

◆Academic Society Affiliations
日本応用物理学会, 日本物理学会, Japan Applied Physics Society, The Physical Society of Japan, The Institute of Electronics, Information and Communication Engineers, The Japan Society of Applied Physics
◆Academic Contribution
会員 , 日本応用物理学会
会員 , 日本物理学会
Member , Japan Applied Physics Society