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Hiroshi Mizuta Professor
School of Materials Science（Department of Materials Science・Materials Characterization and Device）
■Degrees
Bachelor of Science from Osaka University(1983), Master of Science from Osaka University(1985), Doctor of Engineering from Osaka University(1993)
■Professional Career
・CRL, Hitachi, Ltd(1985-2003)・Laboratory Manager and Senior Researcher of Hitachi Cambridge Laboratory (1997-2003)・Associate Professor at Tokyo Institute of Technology(2003-2007)・Adjunct Professor(2007-2010)・Visiting Professor at RIE of Shizuoka University (2009-2011)・Professor of Nanoelectronics at University of Southampton(2007-)
■Specialties
Nano Device Physics, Nano-Electro-Mechanical System (NEMS)Quantum Information Devices, Atom-scale Device Simulation
■Research Keywords
Nanoelectronics, NEMS, Quantum Computaton, Extremely-scaled Devices, Ab initio Simulation
■Publications
◇Books
- Growth and characterisation of Ge nanowires by chemical vapour deposition，C. Li, H. Mizuta and S. Oda，In Tech ISBN 978-953-307-318-7，2011，pp. 487-508
◇Published Papers
- Design and fabrication of densely integrated silicon quantum dots using a VLSI compatible Hydrogen silsequioxane electron beam lithography，Y. P. Lin, M. K. Husain, F. M. Alkhalil, N. Lambert, J. Perez-Barraza, A. J. Ferguson, H. M. H. Chong, Y. Tsuchiya and H. Mizuta，Microelectronic Engineering，98，386, 5 pages，2012
- Strain effects on avalanche multiplication in a silicon nanodot array，N. Mori, H. Minari, S. Uno, H. Mizuta and N. Koshida，Jpn. J. Appl. Phys.，51，04DJ01，2012
- Fabrication and ab initio study of downscaled graphene nanoelectronic devices (Invited Paper)，H. Mizuta, Z. Moktadir, S. A. Boden, N. Kalhor, S. Hang, M. E. Schmidt, N. T. Cuong, D. H. Chi, N. Otsuka, M. Muruagnathan, Y. Tsuchiya, H. Chong, H. N. Rutt and D. M. Bagnall，Proc. SPIE，8462， 846206，2012
◇Lectures and Presentations
- Transport characteristics of nanoconstricted grapheme with and without point defects，S. Deepak, H. Mizuta, M. Manoharan，The International Conference on Nano Science, Engineering and Technology (ICONSET2011)，Sathyabama，November 2011
- Double gate suspended silicon nanowire transistors with a tunable threshold voltage for chemincal/biological sensing applications，M. A. Ghiass, Y. Tsuchiya, F. A. Hassani, C. Dupre, E. Ollier, V. Cherman, S. Armini, S. Bartsch, D. Tsamados and H. Mizuta，12th International conference on Nanotechnology (IEEE NANO 2012)，Birmingham，August 2012
- VLSI Compatible parallel fabrication of scalable few electron Silicon Quantum Dots，Y. P. Lin, J. I. Perez-Barraza, M. K. Husain, F. M. Alkhalil, N. Lambert, H. M. H. Chong, A. J. Ferguson, A. Williams, H. Mizuta，12th International conference on Nanotechnology (IEEE NANO 2012)，Birmingham，August 2012
■Extramural Activities
◇Academic Society Affiliations
- Institute of Physics，1990-
- The Institute of Electrical and Electronics Engineers, Inc. (IEEE)，1987-
- Japan Society of Applied Physics，1986-