Antoine Fleurence Assistant Professor
School of Materials Science（Department of Materials Science・Materials Characterization and Device）

■Degrees

M.S from University Paris-Sud(2004), Ph.D from University Paris-Sud(2007)

■Professional Career

Temporary associate of teaching and research at University Paris-Sud(2007), Invited young researcher at University of Bialystok(2008), Researcher at JAIST(2009), JSPS Postdoctoral fellow(2011)

■Research Keywords

Growth of inorganic thin films, Surface Science, 2D materials

■Publications

◇Published Papers

Tuning of silicene-substrate interactions with potassium adsorption，R. Friedlein, A. Fleurence, J. T. Sadowski, and Y. Yamada-Takamura，Applied Physics Letters 102, 221603 (2013).
Experimental evidence for epitaxial silicene on diboride thin films，A. Fleurence, R. Friedlein, T. Ozaki, H. Kawai, Y. Wang, and Y. Yamada-Takamura，Physical Review Letters 108, 245501 (2012). (Selected for the June 25, 2012 issue of Virtual Journal of Nanoscale Science & Technology)(Open Access, http://link.aps.org/doi/10.1103/PhysRevLett.108.245501)
Scanning tunneling microscopy investigations of the epitaxial growth of ZrB₂ on Si(111)，A. Fleurence and Y. Yamada-Takamura，Physica Status Solidi (c) 8, 779-783 (2011). (Featured on the front cover of March issue)

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◇Lectures and Presentations

Silicene on silicon through a ZrB2(0001) buffer layer，A. Fleurence，Seminar at institute of fundamental electronics, University of Paris-Sud，Orsay, France，2011.05.25
Silicene on silicon through a ZrB2(0001) buffer layer，A. Fleurence，Beyond graphene: silicene, germanene and 2D nanolattices，Rome, Italy，2011.05.23
Electronic properties of epitaxial silicene: a LT-STM/STS study，A. Fleurence, C.-C. Lee, T. Ozaki, Y. Yamada-Takamura, Y. Yoshida, and Y. Hasegawa，American Physical Society March Meeting 2013，Baltimore, U.S.A.，2013.03.20