Manoharan Muruganathan Assistant Professor
School of Materials Science（Department of Materials Science・Materials Characterization and Device）

■Degrees

B.E. from Bharathiar University(2000), Master of Technology from Indian Institute of Technology Kanpur(IIT Kanpur)(2005), Ph.D. from Tokyo Institute of Technology(2008)

■Professional Career

Assistant Professor at Easwari Engineering College(2009-2010), Visiting Assistant Professor at Indian Institute of Information Technology Design and Manufacturing(IIITD&M)(2010-2012)

■Specialties

Nanoelectronics, Atomic-scale Device Simulation, Extremely-scaled Devices

■Research Keywords

Nanoelectronics, Ab-initio simulation, RF and Cryogenic measurements

■Publications

◇Published Papers

Silicon-on-Insulator-Based Radio Frequency Single-ElectronTransistors Operating at Temperatures above 4.2 K，M. Manoharan, Yoshishige Tsuchiya, Shunri Oda, and Hiroshi Mizuta，Nano Lett，8　(12)，4648，2008
Impact of channelconstrictions on the formation of multiple tunnel junctions in heavily-doped silicon SETs，M. Manoharan, Shunri Oda, and Hiroshi Mizuta，Applied Physics Letters，93，112107，2008
Impact of key circuit parameters on signal-to-noise ratio characteristics for the radio-frequency single electron transistors，M. Manoharan, Benjamin Pruvost, Hiroshi Mizuta, and Shunri Oda，IEEE Transactions on Nanotechnology，7，266，2008

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◇Lectures and Presentations

Transport Characteristics of Nanoconstricted Graphene with and without point defects，Deepak S., Hiroshi Mizuta, Manoharan M.，International Conference on Nano Science, Engineering and Technology，India，2011
Silicon radio frequency single-electron transistors operating at above 4.2 K，M. Manoharan, Y. Tsuchiya S. Oda and H. Mizuta，International Conference on Solid State Devices and Materials，Ibaraki，2008
Is it possible to avoid uncontrolled multiple tunnel junctions induced by random dopants in heavily-doped silicon single-electron transistors?，M. Manoharan, Y. Tsuchiya S. Oda and H. Mizuta，IEEE SILICON NANOELECTRONICS WORKSHOP，Hawaii，2008