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Hideki Matsumura Research Professor

■Degrees

Dr.Eng. from Tokyo Institute of Technology (1975)

■Professional Career

Research Fellow at the University of Surrey, England (1975), Research Associate at Tokyo Institute of Technology (1977), Associate Professor at Hiroshima University (1983)

■Specialties

Electronic Materials and DevicesThin Film Technology

■Research Keywords

Cat-CVD technology, Display Technology (MAT-FPD)

■Research Interests

Catalytic CVD (Cat-CVD)
The work of our research group is in electronic materials and electronic device engineering. We are developing a new deposition method, named ``catalytic chemical vapor deposition (Cat-CVD)'' method, by which high-quality amorphous-silicon, poly-silicon, insulating silicon-nitride and other electronic materials can be deposited at low temperatures. These materials are usable for solar cells, thin film transistors on a liquid crystal display panels and large scale integrated circuits (LSIs). By this method, we obtain higher quality amorphous silicon than by the conventional method such as the glow discharge decomposition method using silane gas. We also obtain poly-silicon whose carrier mobility reaches several-tens cm2/Vs.

Novel nanometer-size transistors and high-efficiency solar cells
We are also developing novel nanometer-size transistors, which are made from only metals and insulators. Recently, this new transistor with only 16 nm-long channel can be successfully operated. Furthermore, we are also developing high-efficiency solar cells in which a new energy-conversion mechanism is installed.

■Publications

◇Published Papers

  • Passivation of textured crystalline silicon surfaces by Cat-CVD silicon nitride films and catalytic phosphorus doping,K. Ohdaira, Trinh Thi Cham, and H. Matsumura,Jpn. J. Appl. Phys.,56,102301-1-4,2017
  • Catalytic phosphorus and boron doping to amorphous silicon films,K. Ohdaira, J. Seto, and H. Matsumura,Jpn. J. Appl. Phys.,56,08MB06-1-5,2017
  • Suppression of the epitaxial growth of Si films in Si heterojunction solar cells by the formation of ultra-thin oxide layers,K. Ohdaira, T. Oikawa, K. Higashimine, and H. Matsumura,Current Appl. Phys.,16,1026-1029,2016

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◇Lectures and Presentations

  • Application of Cat-CVD technology to crystalline silicon solar cells,K. Ohdaira, Trinh Thi Cham, T. Oikawa, J. Seto, K. Koyama, and H. Matsumura,SCEJ 82nd Annual Meeting,Shibaura Institute of Technology,March 6-8, 2017
  • Application of catalytic chemical vapor deposition to the fabrication process of high-efficiency crystalline silicon solar cells,K. Ohdaira, Trinh Cham Thi, S. Tsuzaki, T. Oikawa, J. Seto, K. Koyama, and H. Matsumura,13th China SoG Silicon and PV Power Conference,Wyndham Xuzhou East, China,2017年11月16-18日
  • Catalytic phosphorus and boron doping to amorphous silicon films,K. Ohdaira, J. Seto, and H. Matsumura,26th International Photovoltaic Science and Engineering Conference (PVSEC-26),Marina Bay Sands, Singapore,2016年10月24-28日

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■Extramural Activities

◇Other Activities

  • International Display Workshop,Member of Program Committee (1998-2000)
  • NEDO New Sunshine Project,Member of Technical Committee (1998-2000)
  • Japan Society of Applied Physics,Member of Editorial Board (1998-2000)

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■Academic Awards Received

  • Patent of the year 2007
  • Patent of the year 2007