大平　圭介 （オオダイラ　ケイスケ）　准教授
グリーンデバイス研究センター

125件中1-20件目

• 1.　Liquid-phase explosive crystallization of electron-beam-evaporated a-Si films induced by flash lamp annealing，Keisuke Ohdaira and Hideki Matsumura，J. Cryst. Growth，362，149，2013
• 2.　Defect Termination of Flash-Lamp-Crystallized Large-Grain Polycrystalline Silicon Films by High-Pressure Water Vapor Annealing，Keisuke Ohdaira，Jpn. J. Appl. Phys，52，04CR11，2013
• 3.　Formation of Vertical Concentration Gradients in P3HT:PCBM Graded Bilayer Solar Cells，V. Vohra, K. Higashimine, S. Tsuzaki, K. Ohdaira, and H. Murata，Thin Solid Films (in press)
• 4.　Distribution of Phosphorus Atoms and Carrier Concentrations in Single-Crystal Silicon Doped by Catalytically Generated Phosphorous Radicals，Taro Hayakawa
  , Yuki Nakashima, Koichi Koyama, Keisuke Ohdaira, and Hideki Matsumura，Jpn. J. Appl. Phys.，51，061301，2012
• 5.　Passivation Property of SiNx/a-Si and SiNx/Si-rich SiNx Stacked Layers on Crystalline Silicon，Trinh Cham Thi, Koichi Koyama, Keisuke Ohdaira, and Hideki Matsumura，Sol. Energy Mater. Sol. Cells，100，169，2012
• 6.　Polycrystalline Silicon Films with Nanometer-Sized Dense Fine Grains Formed by Flash-Lamp-Induced Crystallization，Keisuke Ohdaira, Shohei Ishii, Naohito Tomura, and Hideki Matsumura，J. Nanosci. Nanotech. 12，591-595，2012
• 7.　Scanning transmission electron microscope analysis of amorphous-Si insertion layers prepared by catalytic chemical vapor deposition, causing low surface recombination velocities on crystalline silicon wafers，K. Higashimine, K. Koyama, K. Ohdaira, H. Matsumura, and N. Otsuka，J. Vac. Sci. Technol.，30，031208，2012
• 8.　Study on Light-Soaking Degradation and Damp Heat Tests for Cat-CVD SiNx/a-Si Stacked Passivation Films Realizing Extremely Low Surface Recombination Velocity，K. Koyama, T. Goto, K. Ohdaira, and H. Matsumura，Proc. 27th European Photovoltaic Solar Energy Conference and Exhibition
• 9.　Defect Termination of Flash-Lamp-Crystallized Large-Grain Polycrystalline Silicon Films by High-Pressure Water Vapor Annealing，K. Ohdaira，Ext. Abst. 2012 Int'l Conf. Solid State Devices and Mater. p.1009
• 10.　Formation of polycrystalline silicon films with µm-order-long grains through liquid-phase explosive crystallization by flash lamp annealing，K. Ohdaira, S. Varlamov, N. Usami, and H. Matsumura，Proc. 38th IEEE Photovoltaic Specialists Conference, 2012
• 11.　Pixel Controlling Substrate Fabricated by Embedding Millions of Silicon IC Chips on Plastic Substrate and Self-Aligned Metal Interconnection Among Such IC Chips，N. T. T. Kieu, T. Yagi, K. Ohdaira, and H. Matsumura，Technical Digest of SID International Symposium, Seminar, and Exhibition, 2012
• 12.　Formation of Polycrystalline Silicon Films for Solar Cells by Flash Lamp Annealing，Keisuke Ohdaira，J. Vac. Soc. Jpn. (in press)
• 13.　Large-Grain Polycrystalline Silicon Films Formed through Flash-Lamp-Induced Explosive Crystallization，Keisuke Ohdaira, Keisuke Sawada, Noritaka Usami, Sergey Varlamov, and Hideki Matsumura，Jpn. J. Appl. Phys.，51，10NB15，2012
• 14.　Photovoltaic effect of large-grain polycrystalline silicon films formed by flash lamp annealing，K. Ohdaira and S. Varlamov，Technical Digest of the 22nd International Photovoltaic Science and Engineering Conference，P-2-25
• 15.　Surface Passivation on Crystalline Silicon with Low Optical Reflectivity and Low Surface Recombination Velocity，H. Matsumura, K. Katoh, K. Koyama, K. Ohdaira，Technical Digest of the 22nd International Photovoltaic Science and Engineering Conference，P-1-24
• 16.　Study on Stability of SiNx/a-Si Stacked Passivation Layer Realizing Extremely Low Surface Recombination Velocity，T. Goto, K. Koyama, K. Ohdaira, and H. Matsumura，Technical Digest of the 22nd International Photovoltaic Science and Engineering Conference，O-1-27
• 17.　Low Temperature Doping of P and B atoms into Crystalline Si by Catalytically Generated Species from PH3 and B2H6，T. Ohta, K. Koyama, K. Ohdaira, and H. Matsumura，Technical Digest of the 22nd International Photovoltaic Science and Engineering Conference，P-1-40
• 18.　Flash-Lamp-Induced Explosive Crystallization of Amorphous Germanium Films Leaving Behind Periodic Microstructures，K. Ohdaira and H. Matsumura，Thin Solid Films，524，161-165，2012
• 19.　Effect of Radical-Doped n+ Back Surface Field Layer on the Effective Minority Carrier Lifetimes in Crystalline Si with Amorphous Si Passivation Layer Deposited by Catalytic Chemical Vapor Deposition，T. Hayakawa, T. Ohta, Y. Nakashima, K. Koyama, K. Ohdaira, and H. Matsumura，Jpn. J. Appl. Phys.，51，101301，2012
• 20.　Lateral Crystallization of Amorphous Silicon films Induced by Flash Lamp Annealing，Keisuke Ohdaira, Shohei Ishii, Naohito Tomura, Hideki Matsumura，Proceedings of the 7th Thin-Films Materials and Devices Meeting，110107015，2011

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