北陸先端科学技術大学院大学 [JAIST] - 研究者総覧
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鈴木 寿一 (スズキ トシカズ) 教授
ナノマテリアルテクノロジーセンター

61件中41-60件目

  • 41. Electron transport properties of epitaxial lifted-off InAs thin films bonded on SiO2/Si wafers,H. Takita, Y. Jeong, J. Arita, and T. Suzuki,7th Topical Workshop on Heterostructure Microelectronics,pp. 59-60,(2007).
  • 42. Epitaxial lift-off of InAs thin films using lattice-mismatched InAs/AlAs/InAs/GaAs(001),H. Takita, Y. Jeong, J. Arita, and T. Suzuki,IEEE 2007 International Meeting for Future of Electron Devices, Kansai,pp. 89-90,(2007).
  • 43. Relation between mosaicity and dislocation density in InSb and InAlSb grown on GaAs(001),T. Sato, H. Takita, S. Yamada, and T. Suzuki,14th International Conference on Molecular Beam Epitaxy,p. 316,(2006).
  • 44.  S. Cabanas,V. A. Guzenko, M. Akabori, Th. Sch\\{a}pers, T. Sato, T. Suzuki, and S. Yamada",Weak antilocalization measurements on a 2-dimensional electr,phys. stat. sol. (c)
  • 45. Dislocation-limited electron transport in InSb grown on GaAs(001),T. Sato, T. Suzuki, S. Tomiya, and S. Yamada,Physica B,vol. 376/377,pp. 579-582,(2006).
  • 46. Impurity diffusion in InGaAs Esaki tunnel diodes of varied defect densities,H. Ono, S. Taniguchi, and T. Suzuki,IEICE Trans. on Electronics,vol. E89-C,pp. 1020-1024,(2006).
  • 47. Spin splitting in InGaSb/InAlSb 2DEG having high indium content,M. Akabori, T. Sunouchi, T. Kakegawa, T. Sato, T. Suzuki, and S. Yamada,Physica E,vol. 34,pp. 413-416,(2006).
  • 48. High-temperature electron transport in metamorphic InGaAs/InAlAs heterostructures,T. Suzuki, H. Ono, and S. Taniguchi,Sci. Technol. Adv. Mater.,vol. 6,pp. 400-405,(2005).
  • 49. Selection-rule breaking of Raman scattering in InSb thin films grown on GaAs(001),T. Sato, T. Suzuki, S. Yamada, H. Sano, and G. Mizutani,Proceedings of the 12 International Conference onNarrow Gap Semiconductors,pp. 108-112,(2006).
  • 50. Degradation of metamorphic InGaAs Esaki tunnel diodes due to electrode diffusion and impurity interdiffusion,H. Ono, M. Yanagita, S. Taniguchi, and T. Suzuki,Proceedings of 17th International Conference on Indium Phosphide and Related Materials,pp. 445-448,(2005).
  • 51. Indium content dependence of electron velocity and impact ionization in InAlAs/InGaAs metamorphic HEMTs,H. Ono, S. Taniguchi, and T. Suzuki,Jpn. J. Appl. Phys.,vol. 43,pp. 2259-2263,(2004).
  • 52. High-frequency characteristics and saturation electron velocity of InAlAs/InGaAs metamorphic high electron mobility transistors at high temperatures,H. Ono, S. Taniguchi, and T. Suzuki,Proceedings of 16th International Conference on Indium Phosphide and Related Materials,pp. 288-291,(2004).
  • 53. 「化合物半導体の先端研究動向」,山田省二, 鈴木寿一,電子材料,vol. 43,no. 7,pp. 29-33,(2004).
  • 54. Experimental evidence of surface conduction inAlSb-InAs resonant tunneling diodes,K. Nomoto, K. Taira, T. Suzuki, and I. Hase,J. Appl. Phys.,vol. 85,pp. 953-958,(1999).
  • 55. Field effect transistors with self-assembled quantum dots,T. Suzuki, H. Ono, N. Kawashima, and K. Taira,17th Symposium on Future Electron Devices,pp. 53-56,(1998).
  • 56. Tunneling current through InAs self-assembled quantum dots embedded in symmetric and asymmetric AlGaAs barriers,T. Suzuki, Y. Haga, K. Nomoto, K. Taira, and I. Hase,Solid-State Electron.,vol. 42,pp. 1303-1307,(1998).
  • 57. Tunneling spectroscopy of quantum dots using submicrometer-diameter AlGaAs-GaAs triple-barrier diodes,K. Nomoto, T. Suzuki, K. Taira, and I. Hase,Phys. Rev. B,vol. 55,pp. 2523-2529,(1997).
  • 58. Diameter dependence of current-voltage characteristics of ultrasmall area AlSb-InAs resonant tunneling diodes with diameters down to 20nm,K. Nomoto, K. Taira, T. Suzuki, I. Hase, H. Hiroshima, and K. Komuro,Appl. Phys. Lett.,vol. 70,pp. 2025-2027,(1997).
  • 59. Tunneling spectroscopy of InAs wetting layers and self-assembled quantum dots: resonant tunneling through two- and zero-dimensional electronic states,T. Suzuki, K. Nomoto, K. Taira, and I. Hase,Jpn. J. Appl. Phys.,vol. 36,pp. 1917-1921,(1997).
  • 60. A statistical model of quantum dot arrays with Coulomb coupling,T. Suzuki, K. Nomoto, R. Ugajin, and I. Hase,J. Appl. Phys.,vol. 78,pp. 2547-2549,(1995).

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