大平　圭介 （オオダイラ　ケイスケ）　准教授
グリーンデバイス研究センター

125件中41-60件目

• 41.　Propagation Loss of Amorphous Silicon Optical Waveguides at the 0.8 μm-Wavelength Range，Takahiro Asukai, Makoto Inamoto, Takeo Maruyama, Koichi Iiyama, Keisuke Ohdaira, and Hideki Matsumura，Proc. 7th IEEE International Conference on Group IV Photonics (GFP2010)，P2.16
• 42.　Drastic Reduction in Surface Recombination Velocity of Crystalline Silicon by Surface Treatment Using Catalytically-Generated Radicals，Hideki Matsumura, Motoharu Miyamoto, Koichi Koyama, and Keisuke Ohdaira，Sol. Energy Mater. Sol. Cells，95，797-799，2011
• 43.　Advantage of plasma-less deposition in Cat-CVD to performance of electric devices，H. Matsumura, T. Hasegawa, S. Nishizaki, and K. Ohdaira，Proceedings of 6th International Conference on Hot-Wire Chemical Vapor Deposition (HWCVD6)，hw6-23
• 44.　Effects of High Nitrogen Pressure and Thermal Treatment on Adhesion to Amorphous Silicon/Silicon Nitride/Polyethersulfone Substrate during Excimer Laser Annealing，Akira Heya, Shogo Nishizaki, Naoya Kawamoto, Keisuke Ohdaira, Hideki Matsumura, and Naoto Matsuo，Journal of the Vacuum Society of Japan，53，692，2010
• 45.　Extremely low recombination velocity on crystalline silicon surfaces realized by low-temperature impurity doping in Cat-CVD technology，T. Hayakawa, M. Miyamoto, K. Koyama, K. Ohdaira, and H. Matsumura，Proceedings of 6th International Conference on Hot-Wire Chemical Vapor Deposition (HWCVD6)，hw6-22
• 46.　Low resistivity metal lines formed by functional liquids and successive treatment of catalytically generated hydrogen atoms in Cat-CVD system，N. T. T. Kieu, K. Ohdaira, T. Shimoda, and H. Matsumura，Proceedings of 6th International Conference on Hot-Wire Chemical Vapor Deposition (HWCVD6)，hw6-24
• 47.　Catalytic decomposition of NH3 on heated Ru and W surfaces，H. Umemoto, Y. Kashiwagi, K. Ohdaira, H. Kobayashi, and K. Yasui，Proceedings of 6th International Conference on Hot-Wire Chemical Vapor Deposition (HWCVD6)，hw6-6
• 48.　Microstructures of polycrystalline silicon films formed through explosive crystallization induced by flash lamp annealing，K. Ohdaira, S. Ishii, N. Tomura and H. Matsumura，Proceedings of the 42nd International Conference on Solid State Devices and Materials (SSDM 2010)
• 49.　次世代高性能薄膜材料形成法としてのCat-CVD，松村英樹、大平圭介，未来材料，9，11，30-35，2009
• 50.　Flash-lamp-crystallized Polycrystalline Silicon Films with Remarkably Long Minority Carrier Lifetimes，Keisuke Ohdaira, Hiroyuki Takemoto, Takuya Nishikawa, and Hideki Matsumura，Current Applied Physics，10，S402–S405，2010
• 51.　Complementary metal-oxide-semiconductor Ion-Sensitive Field-Effect Transistor Sensor Array with Silicon Nitride Film Formed by Catalytic Chemical Vapor Deposition as an Ion-Sensitive Membrane，Yuji Kagohashi, Hiroaki Ozawa, Shigeyasu Uno, Kazuo Nakazato, Keisuke Ohdaira, and Hideki Matsumura，Jpn. J. Appl. Phys.，49，01AG06，2010
• 52.　Defect Termination of Flash-Lamp-Crystallized Polycrystalline Silicon Films by Undesorped Hydrogen Atoms，Keisuke Ohdaira, Takuya Nishikawa, Shohei Ishii, Naohito Tomura, Koichi Koyama, and Hideki Matsumura，Proceedings of 25th European Photovoltaic Solar Energy Conference and Exhibition (5th World Conference on Photovoltaic Energy Conversion)，pp.3546-3548，2010
• 53.　1.5 cm/s Surface Recombination Velocity Realized by Cat-CVD SiNx/i-a-Si Double Passivation Layers on Crystalline Si，K. Koyama, K, Ohdaira, and H. Matsumura，Proceedings of 25th European Photovoltaic Solar Energy Conference and Exhibition (5th World Conference on Photovoltaic Energy Conversion)，pp. 1737-1739，2010
• 54.　Cat-CVD (Catalytic-CVD): Its Fundamentals and Application，H. Matsumura and K. Ohdaira，ECS Transactions，25(8, EuroCVD 17/CVD 17)，53-63，2009
• 55.　Drastic suppression of the optical reflection of flash-lamp-crystallized poly-Si films with spontaneously formed periodic microstructures，Keisuke Ohdaira, Takuya Nishikawa, Kazuhiro Shiba, Hiroyuki Takemoto, and Hideki Matsumura，Thin Solid Films，518，6061-6065，2010
• 56.　A Novel Technique for Formation of Metal Lines by Functional Liquid Containing Metal Nano-Particles and Reduction of Their Resistivity by Hydrogen Treatment，Nguyen Thi Thanh Kieu, Keisuke Ohdaira, Tatsuya Shimoda, Hideki Matsumura，J. Vac. Sci. Technol. B，28，775-778，2010
• 57.　THIN-FILM POLYCRYSTALLINE SILICON SOLAR CELLS FORMED BY FLASH LAMP ANNEALING OF a-SI FILMS，Yohei Endo, Tomoko Fujiwara, Keisuke Ohdaira, Shogo Nishizaki, Kensuke Nishioka, and Hideki Matsumura，Thin Solid Films，518，5003，2010
• 58.　Variation of Crystallization Mechanisms in Flash-Lamp-Irradiated Amorphous Silicon Films，Keisuke Ohdaira, Takuya Nishikawa, and Hideki Matsumura，Journal of Crystal Growth，312，2834-2839，2010
• 59.　Extremely low surface recombination velocities on crystalline silicon wafers realized by catalytic chemical vapor deposited SiNx/a-Si stacked passivation layers，K. Koyama, K. Ohdaira, and H. Matsumura，Appl. Phys. Lett.，97，082108，2010
• 60.　Polycrystalline Si films with unique microstructures formed from amorphous Si films by non-thermal equilibriumflash lamp annealing，Keisuke Ohdaira, Takuya Nishikawa, Kazuhiro Shiba, Hiroyuki Takemoto, and Hideki Matsumura，Physica Status Solidi (c)，7，604-607，2010

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