大平　圭介 （オオダイラ　ケイスケ）　准教授
グリーンデバイス研究センター

124件中61-80件目

• 61.　Polycrystalline Si films with unique microstructures formed from amorphous Si films by non-thermal equilibriumflash lamp annealing，Keisuke Ohdaira, Takuya Nishikawa, Kazuhiro Shiba, Hiroyuki Takemoto, and Hideki Matsumura，Physica Status Solidi (c)，7，604-607，2010
• 62.　Investigation of Cat-CVD amorphous silicon film properties under high catalyzer temperature，K. H. Yen, S. Nishizaki, K. Ohdaira, H. Matsumura, Y. T. Huang, H. W. Zan, and C. C.Tsai，Phys. Status Solidi (c)，7，583-587，2010
• 63.　Selection of Material for the Back Electrodes of Thin-FilmSolar Cells using Polycrystalline Silicon Films Formed byFlash Lamp Annealing，K. Ohdaira, T. Fujiwara, K. Shiba and H. Matsumura，Proc. 2009 International Conference on Solid State Devices and Materials
• 64.　Extremely low surface recombination velocities on crystalline silicon wafers realized by catalytic chemical vapor deposited SiNx/a-Si stacked passivation layers，K. Koyama, K. Ohdaira, and H. Matsumura，Appl. Phys. Lett.，97，082108，2010
• 65.　Flash-lamp-induced crystallization of amorphous silicon films in different explosive crystallization modes，Keisuke Ohdaira, Takuya Nishikawa, and Hideki Matsumura，Renewable Energy 2010 Proceedings，O-Pv-1-2，2010
• 66.　Effects of High Nitrogen Pressure and Thermal Treatment on Adhesion to Amorphous Silicon/Silicon Nitride/Polyethersulfone Substrate during Excimer Laser Annealing，Akira Heya, Shogo Nishizaki, Naoya Kawamoto, Keisuke Ohdaira, Hideki Matsumura, and Naoto Matsuo，Journal of the Vacuum Society of Japan，53，692，2010
• 67.　Study of high gas barrier performance of film with coated SiOxNy layers，H. Yanagihara, C. Ookawara, S. Yoshida, K. Ohdaira, and H. Matsumura，Annual Technical Conference Proceedings - Society of Vacuum Coaters，53，549-552，2010
• 68.　Selection of material for the back electrodes of thin-film solar cells using polycrystalline silicon films formed by flash lamp annealing，Keisuke Ohdaira, Tomoko Fujiwara, Yohei Endo, Kazuhiro Shiba, Hiroyuki Takemoto, and Hideki Matsumura，Jpn. J. Appl. Phys.，49，04DP04，2010
• 69.　Advantage of Plasma-Less Deposition; Cat-CVD Fabrication of a-Si TFT with Current Drivability Equivalent to Poly-Si TFT，Hideki Matsumura, Keisuke Ohdaira, and Shogo Nishizaki，Physica Status Solidi (c)，7，1132-1135，2010
• 70.　Carrier Transport Properties of Flash-Lamp-Crystallized Poly-Si Films，Keisuke Ohdaira, Takuya Nishikawa, Shohei Ishii, Naohito Tomura, and Hideki Matsumura，Proceedings of 35th IEEE Photovoltaic Specialists Conference (in press)
• 71.　A novel patterning technique using super-hydrophobic PTFE thin films by Cat-CVD method，Michihisa Takachi, Hiroaki Yasuoka, Keisuke Ohdaira, Tatsuya Shimoda, and Hideki Matsumura，Thin Solid Films 517 (2009) 3622-3624
• 72.　Comparison of a-Si TFTs fabricated by Cat-CVD and PECVD methods，Shogo Nishizaki, Keisuke Ohdaira and Hideki Matsumura，Thin Solid Films 517 (2009) 3581-3583
• 73.　Precursor Cat-CVD a-Si films for formation of high-quality poly-Si films on glass substrates by flash lamp annealing，Keisuke Ohdaira, Kazuhiro Shiba, Hiroyuki Takemoto, Tomoko Fujiwara, Yohei Endo, Shogo Nishizaki, Young Rae Jang, and Hideki Matsumura，Thin Solid Films 517 (2009) 3472-3475
• 74.　SUPERIOR POTETIAL OF FLASH-LAMP-CRYSTALLIZED POLY-SI FILMSFOR APPLICATIO TO THIN-FILM POLY-SI SOLAR CELLS，Keisuke Ohdaira, Hiroyuki Takemoto, Kazuhiko Shiba, Takuya Nishikawa, Koichi Koyama, and Hideki Matsumura，Proc. 24th European Photovoltaic Solar Energy Conference and Exhibition，2510-2513，2009
• 75.　Application of Silicon Nitride by Catalytic Chemical Vapor Deposition (Cat-CVD) to CMOS ISFET Sensor LSI，Y. Kagohashi, U. Ozawa, S. Uno, K. Nakazato, K. Ohdaira, and H. Matsumura，Proceedings of the Fifth International Conference onMolecular Electronics and Bioelectronics, p. 251 (2009)
• 76.　IMPROVED PERFORMANCE OF THIN-FILM SOLAR CELLS USING SURFACE-MORPHOLOGY-CONTROLLED POLY-SI FILMS CRYSTALLIZED BY FLASH LAMP ANNEALING，Keisuke Ohdaira, Hiroyuki Takemoto, Kazuhiro Shiba, Takuya Nishikawa, Koichi Koyama, and Hideki Matsumura，Proc. 34th IEEE Photovoltaic Specialists Conf. 2009，422-425
• 77.　Drastic Improvement of Minority Carrier Lifetimes Observed in Hydrogen-Passivated Flash-Lamp-Crystallized Polycrystalline Si Films，Keisuke Ohdaira, Hiroyuki Takemoto, Kazuhiro Shiba, and Hideki Matsumura，Appl. Phys. Exp. 2 (2009) 061201.
• 78.　Explosive crystallization of amorphous silicon films by flash lamp annealing，Keisuke Ohdaira, Tomoko Fujiwara, Yohei Endo, Shogo Nishizaki, and Hideki Matsumura，J. Appl. Phys. 106, 044907 (2009)
• 79.　New application of Cat-CVD technology and recent status of industrial implementation，Hideki Matsumura and Keisuke Ohdaira，Thin Solid Films 517 (2009) 3420-3423
• 80.　Formation of micrometer-order-thick poly-Si films on textured glass substrates by flash lamp annealing of a-Si films prepared by catalytic chemical vapor deposition，K. Ohdaira, T. Fujiwara, Y. Endo, K. Nishioka, and H. Matsumura，J. Cryst. Growth 311 (2009) 769-772

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