北陸先端科学技術大学院大学 [JAIST] - 研究者総覧
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堀田 將 (ホリタ ススム) 教授
融合科学系、マテリアルサイエンス系、応用物理学領域

99件中81-99件目

  • 81. Suppression of Oxidation of an epitaxial (100)ZrN Film on Si during the Deposition of the Ir Film,S.Horii, T.Toda, T.D.Khoa and S.Horita,The 6th International Symp. on Sputtering and Plasma Processes,2001.6.15
  • 82. Ferroelectric Properties of Epitaxial Bi4Ti3O12 Films Deposited on Epitaxial (100)Ir and (100)Pt Films on Si by Sputtering,S.Horita, S.Sasaki, O.kitagawa and S.Horii,The 6th International Symp. on Sputtering and Plasma Processes,2001.6.13
  • 83. High Deposition Rate of Epitaxial (100) Iridium Film on (100)YSZ/(100)Si Structure by Sputtering,T.D.Khoa, S.Horii and S.Horita,13th Inter.Conf.on Crystal Growth and 8th Conf. on Vapor Growth and Epitaxy,2001.8.2
  • 84. Crystallization of an a-Si film by a Nd:YAG pulse laser beam with linear polarization,N,Nakata, A.Shimoyama and S.Horita,2000 International Workshop on Active-Matrix Liquid-Crystal Displays(AM-LCD 2000),Kogakuin Univ. Tokyo,,Kyoto,2000.6.14
  • 85. FERROELECTRIC PROPERTIES OF AN EPITAXIAL PZT/Ir/ZrN/Si STRUCTURE BY SPUTTERING,S.Horii, S.Yokoyama and S.Horita,12th IEEE International Symposium on the Application of Ferroelectrics, ISAF 2000, pp.133, Honolulu, Hawaii,Hawaii,2000.7.31
  • 86. Supression of Oxidation of an Epitaxial (100)ZrN Film on Si during the Deposition of Ir Film,S.Horii and S.Horita,Material Research Society(MRS) Fall Meeting,Boston, U.S.A.,2000.11.27
  • 87. Control of the Grain Boundary Location in a Crystallized Si Film on a Glass Substrate by Pulse Lazer beam with Linearly Polarization,Y.Nakata and S.Horita,Material Research Society(MRS) Fall Meeting,Boston, U.S.A.,2000.11.30
  • 88. エピタキシャルPZT/Ir/ZrN/Si構造のの強誘電体特性,堀井貞義,横山政司,堀田將,第17回強誘電体応用会議,京都,京都,2000.5.25
  • 89. 高コヒーレント直線偏光パルスレーザービームによる結晶化Si薄膜の粒界位置制御,中田靖則,堀田將,電子情報通信学会電子部品・材料研究会,金沢,2000.10.27
  • 90. HF+ヒドラジン溶液処理をしたエピタキシャル(100)ZrN/(100)Si構造上への(100)Ir薄膜の作製,堀井貞義,戸田猛夫,堀田 將,電子情報通信学会,シリコン材料・デバイス研究会,大阪,2001.3.5
  • 91. Ir/(100)YSZ/(100)Si基板上に作製したエピタキシャルPZT薄膜特性の膜厚依存性,堀井貞義,横山政司,中島英樹,堀田將,第16回強誘電体応用会議,講演予稿集,27-T-19, pp.61-62,京都,1999.5.27
  • 92. 強誘電体薄膜の作製とメモリー応用,堀田將,北陸共同研究交流会特別講演会-LINK21-,金沢,1999.10.29
  • 93. エピタキシャルZrN膜/(100)Si基板上に形成したPZT薄膜の強誘電体特性,堀井貞義,横山政司,堀田將,電子情報通信学会シリコン材料・デバイス研究会,信学技報,Vol 99, No.670, pp.13-18,2000.3.7
  • 94. (100)YSZ/(100)Si基板上へのヘテロエピタキシャル(100)Ir及び(001)PZT薄膜の膜質特性,堀田 將,平成11年度広域研究会A「ヘテロエピタキシャル成長技術を用いた新機能デバイスの研究開発」報告書,pp.4-11,財団法人中部科学技術センター,2000.3
  • 95. Improvement of the electrical properites of heteroepitaxial yttria-stabilized zirconia fillms(YSZ) on Si prepared by reactive sputtering,S.Horita, H.Nakajima and T.Kuniya,The 5th International Symp. on Sputtering and Plasma Processes, Proc. EI 1-2, pp.3-4.,金沢,1999.6.16
  • 96. Heteroepitaxial Growth of PZT Film on (100)Ir/(100)YSZ/(100)Si Substrate Structure Prepared by Reactive Sputtering,S.Horii, S.Yokoyama and S.Horita,The 5th International Symp. on Sputtering and Plasma Processes, Proc. EI 3-2, pp.61-62.,Kanazawa,1999.6.16
  • 97. Low Voltage Saturation of a PZT Film on (100)Ir/(100)YSZ/(100)Si Substrate Structure Prepared by Reactive Sputtering,S.Horii, S.Yokoyama, T.Kuniya and S.Horita,the 1999 International Conference on Solid State Device and Material, Extended Abs. pp.398-399.,Tokyo,1999.9
  • 98. Material properites of heteroepitaxial (001) and (111) PZT films on Si substrates prepared by sputtering,S.Horita, S.Horii and S.Yokoyama,The 1999 Joint International Meeting (196 th Meeting of the Electrochemical Society), Abstract No.1044, in Hawaii,Hawaii,1999.10
  • 99. Heteroepitaxial Growth of Ir/ZrN Layered Electrode on (100)Si Substrate for Ferroelectric Capacitor,S.Horii, S.Yokoyama and S.Horita,Material Research Society(MRS) 1999 Fall Meeting, Abs.Y3.6, pp.440.,Boston, U.S.A.,1999.11.29

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