北陸先端科学技術大学院大学 [JAIST] - 研究者総覧
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堀田 將 (ホリタ ススム) 教授
融合科学系、マテリアルサイエンス系、応用物理学領域

103件中81-100件目

  • 81. A New Principle of Ferroelectric Gate FET Memory,T.D.Khoa and S.Horita,1st Inter. Meeting on Ferroelectric Random Access Memories FeRAM 2001,Gotenba,2001.11.20
  • 82. Preparation of (100) Ir Film on an HF+Hydrazine treated epitaxial (100)ZrN/(100)Si Structure,S.Horii, T.Toda, T.D.Khoa and S.Horita,13th Inter.Conf.on Crystal Growth and 8th Conf. on Vapor Growth and Epitaxy,Kyoto,2001.8.2
  • 83. Improvement of Surface Crystalline Quality of an Epitaxial (100) ZrN Film as a Bottom Electrode for Ferroelectric Capacitor,S.Horii, T.Toda and S.Horita,Material Research Society(MRS) Fall Meeting,Boston, U.S.A.,2001.11.26
  • 84. Suppression of Oxidation of an epitaxial (100)ZrN Film on Si during the Deposition of the Ir Film,S.Horii, T.Toda, T.D.Khoa and S.Horita,The 6th International Symp. on Sputtering and Plasma Processes,2001.6.15
  • 85. Ferroelectric Properties of Epitaxial Bi4Ti3O12 Films Deposited on Epitaxial (100)Ir and (100)Pt Films on Si by Sputtering,S.Horita, S.Sasaki, O.kitagawa and S.Horii,The 6th International Symp. on Sputtering and Plasma Processes,2001.6.13
  • 86. High Deposition Rate of Epitaxial (100) Iridium Film on (100)YSZ/(100)Si Structure by Sputtering,T.D.Khoa, S.Horii and S.Horita,13th Inter.Conf.on Crystal Growth and 8th Conf. on Vapor Growth and Epitaxy,2001.8.2
  • 87. ZrN/Ir金属バッファ層を用いてSi基板上へのエピタキシャルPZT薄膜の形成,堀田 將,平成13年度科学技術振興調整費「セラミックスインテグレーション技術による新機能性材料創製に関する研究会」第1回BL調査研究会,2001.8.24
  • 88. Crystallization of an a-Si film by a Nd:YAG pulse laser beam with linear polarization,N,Nakata, A.Shimoyama and S.Horita,2000 International Workshop on Active-Matrix Liquid-Crystal Displays(AM-LCD 2000),Kogakuin Univ. Tokyo,,Kyoto,2000.6.14
  • 89. FERROELECTRIC PROPERTIES OF AN EPITAXIAL PZT/Ir/ZrN/Si STRUCTURE BY SPUTTERING,S.Horii, S.Yokoyama and S.Horita,12th IEEE International Symposium on the Application of Ferroelectrics, ISAF 2000, pp.133, Honolulu, Hawaii,Hawaii,2000.7.31
  • 90. Supression of Oxidation of an Epitaxial (100)ZrN Film on Si during the Deposition of Ir Film,S.Horii and S.Horita,Material Research Society(MRS) Fall Meeting,Boston, U.S.A.,2000.11.27
  • 91. Control of the Grain Boundary Location in a Crystallized Si Film on a Glass Substrate by Pulse Lazer beam with Linearly Polarization,Y.Nakata and S.Horita,Material Research Society(MRS) Fall Meeting,Boston, U.S.A.,2000.11.30
  • 92. エピタキシャルPZT/Ir/ZrN/Si構造のの強誘電体特性,堀井貞義,横山政司,堀田將,第17回強誘電体応用会議,京都,京都,2000.5.25
  • 93. 高コヒーレント直線偏光パルスレーザービームによる結晶化Si薄膜の粒界位置制御,中田靖則,堀田將,電子情報通信学会電子部品・材料研究会,金沢,2000.10.27
  • 94. HF+ヒドラジン溶液処理をしたエピタキシャル(100)ZrN/(100)Si構造上への(100)Ir薄膜の作製,堀井貞義,戸田猛夫,堀田 將,電子情報通信学会,シリコン材料・デバイス研究会,大阪,2001.3.5
  • 95. Heteroepitaxial Growth of PZT Film on (100)Ir/(100)YSZ/(100)Si Substrate Structure Prepared by Reactive Sputtering,S.Horii, S.Yokoyama and S.Horita,The 5th International Symp. on Sputtering and Plasma Processes, Proc. EI 3-2, pp.61-62.,Kanazawa,1999.6.16
  • 96. Low Voltage Saturation of a PZT Film on (100)Ir/(100)YSZ/(100)Si Substrate Structure Prepared by Reactive Sputtering,S.Horii, S.Yokoyama, T.Kuniya and S.Horita,the 1999 International Conference on Solid State Device and Material, Extended Abs. pp.398-399.,Tokyo,1999.9
  • 97. Material properites of heteroepitaxial (001) and (111) PZT films on Si substrates prepared by sputtering,S.Horita, S.Horii and S.Yokoyama,The 1999 Joint International Meeting (196 th Meeting of the Electrochemical Society), Abstract No.1044, in Hawaii,Hawaii,1999.10
  • 98. Heteroepitaxial Growth of Ir/ZrN Layered Electrode on (100)Si Substrate for Ferroelectric Capacitor,S.Horii, S.Yokoyama and S.Horita,Material Research Society(MRS) 1999 Fall Meeting, Abs.Y3.6, pp.440.,Boston, U.S.A.,1999.11.29
  • 99. Ir/(100)YSZ/(100)Si基板上に作製したエピタキシャルPZT薄膜特性の膜厚依存性,堀井貞義,横山政司,中島英樹,堀田將,第16回強誘電体応用会議,講演予稿集,27-T-19, pp.61-62,京都,1999.5.27
  • 100. 強誘電体薄膜の作製とメモリー応用,堀田將,北陸共同研究交流会特別講演会-LINK21-,金沢,1999.10.29

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