大平　圭介 （オオダイラ　ケイスケ）　准教授
グリーンデバイス研究センター

124件中81-100件目

• 81.　a-Si TFTs with current drivability equivalent to poly-Si TFTs，Shogo Nishizaki, Keisuke Ohdaira, and Hideki Matsumura，Proceedings of International Thin Film Transistor Conference 2009 (ITC'09)，2009/03/05
• 82.　触媒化学気相堆積(Cat-CVD)法によるアモルファスシリコン薄膜の作製技術と瞬間熱処理による太陽電池用高品質多結晶シリコン薄膜形成，大平 圭介，月刊 マテリアルステージ 2009年4月号 pp.112-115
• 83.　Antireflection subwavelength structure of silicon surface formed by wet process using catalysis of single nano-sized gold particle，Kensuke Nishioka, Susumu Horita, Keisuke Ohdaira, and Hideki Matsumura，Sol. Energy Mater. Sol. Cells 92 (2008) pp.919-922
• 84.　フラッシュランプ加熱による高品質シリコン薄膜多結晶の成長，大平圭介，まてりあ, 第47巻, 第2号, pp.89-92 (2008)
• 85.　A NOVEL THIN-FILM POLY-SI SOLAR CELLS FORMED ON A GLASS SUBSTRATE BY FLASH LAMP ANNEALING OF P-I-N AMORPHOUS SILICON FILMS PREPARED BY CATALYTIC CVD，K. Ohdaira, Y. Endo, T. Fujiwara, K. Shiba, H. Takemoto, K. Koyama, S. Nishizaki, Y. R. Jang, K. Nishioka, and H. Matsumura，23rd European Photovoltaic Solar Ebergy Conference and Exhibition, September 1-5, Valencia, Spain, 2008
• 86.　Study of Silicidation Process of Tungsten Catalyzer during Silicon Film Deposition in Catalytic Chemical Vapor Deposition，Kazuhiro Honda, Keisuke Ohdaira, and Hideki Matsumura，Jpn. J. Appl. Phys.，47，3692-3698
• 87.　Fabrication of PTFE thin films by dual catalytic chemical vapor deposition method，H. Yasuoka, M. Yoshida, K. Sugita, K. Ohdaira, H. Murata, and H. Matsumura，Thin Solid Films 516 (2008) pp. 687-690.
• 88.　Protection of organic light-emitting diodes over 50 000 hours by Cat-CVD SiNx/SiOxNy stacked thin films，Y. Ogawa, K. Ohdaira, T. Oyaidu, and H. Matsumura，Thin Solid Films 516 (2008) pp. 611-614.
• 89.　Formation of gas barrier films by Cat-CVD method using organic silicon compounds，T. Oyaidu, Y. Ogawa, K. Tsurumaki, K. Ohdaira, and H. Matsumura，Thin Solid Films 516 (2008) pp. 604-606
• 90.　Poly-Si films with long carrier lifetime prepared by rapid thermal annealing of Cat-CVD amorphous silicon thin films，K. Ohdaira, Y. Abe, M. Fukuda, S. Nishizaki, N. Usami, K. Nakajima, T. Karasawa, T. Torikai, and H. Matsumura，Thin Solid Films 516 (2008) pp. 600-603.
• 91.　Recent situation of industrial implementation of Cat-CVD technology in Japan，H. Matsumura and K. Ohdaira，Thin Solid Films 516 (2008) pp. 537-540.
• 92.　The Studies of Cat-CVD Amorphous Silicon (a-Si) Film Properties under High Catalyzer Temperature，K.H. Yen, S. Nishizaki, K. Ohdaira, H. Matsumura, H.W. Zan, and C.C. Tsai，Proceedings of International Symposium on Solar Cell Technologies (ISSCT) 2008, Taipei International Convention Center, Taiwan, December 5-6, 2008
• 93.　Cat-CVD Technology and Its Application to Solar Cells，Hideki Matsumura and Keisuke Ohdaira，Proceedings of International Symposium on Solar Cell Technologies (ISSCT) 2008, Taipei International Convention Center, Taiwan, December 5-6, 2008
• 94.　Future of Thin Film Transistors for Flat Panel Displays，H. Matsumura, K. Ohdaira，Proceedings of the Fifteenth International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD ’08), The Natipnal Museum of Emerging Science and Innovation, Tokyo, July 2-4, 2008
• 95.　Micro-Assembling Technology (MAT) of Millions of Silicon Chips for Fabrication of Large Area and Highly Functional Flat Panel Displays，Hideki Matsumura, Takayuki Shuto and Keisuke Ohdaira，Proceedings of the 4th International Thin-Film Transistor Conference, Kyung Hee University, Seoul, Korea, January 24-25, 2008
• 96.　A novel method for suppressing silicidation of tungsten catalyzer during silane decomposition in Cat-CVD，K. Honda, K. Ohdaira, and H. Matsumura，Thin Solid Films 516 (2008) pp. 826-828.
• 97.　Extension of lifetime of catalyzing wires in Cat-CVD by their surface modification，K. Honda, K. Ohdaira, and H. Matsumura，J. Non-Cryst. Solids，354，2117-2120，1 May 2008
• 98.　Study on Stability of Amorphous Silicon Thin-Film Transistors Prepared by Catalytic Chemical Vapor Deposition，Shogo Nishizaki, Keisuke Ohdaira, and Hideki Matsumura，Jpn. J. Appl. Phys，47，pp. 8700-8706，December 19, 2008
• 99.　Formation of Several-Micrometer-Thick Polycrystalline Silicon Films on Soda Lime Glass by Flash Lamp Annealing，Keisuke Ohdaira, Tomoko Fujiwara, Yohei Endo, Shogo Nishizaki, and Hideki Matsumura，Jpn. J. Appl. Phys.，47，11，pp. 8239-8242，November 14, 2008
• 100.　THIN FILM P-I-N POLY-SI SOLAR CELLS DIRECTLY CONVERTED FROM P-I-N A-SI STRUCTURES BY A SINGLE SHOT OF FLASH LAMP，Keisuke Ohdaira, Tomoko Fujiwara, Yohei Endo, Kazuhiro Shiba, Hiroyuki Takemoto, Shogo Nishizaki, Young Rae Jang, Kensuke Nishioka, and Hideki Matsumura，Proc. 33rd IEEE Photovoltaic Specialists Conf., May 11-16, San Diego, USA, 2008 (in press)

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