北陸先端科学技術大学院大学 [JAIST] - 研究者総覧
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赤堀 誠志 (アカボリ マサシ) 准教授
マテリアルサイエンス系、応用物理学領域

125件中101-120件目

  • 101. Spin-control in semiconductor nanostructures,Th. Schaepers, V. A. Guzenko, M. Akabori, S. Estevez-Hernandez, A. Bringer, M. Hagedorn, and H. Hardtdegen,35th International Symposium on Compound Semiconductors, Rust, Germany, September 21 - 24 (2008)
  • 102. MOVPE of modulation doped GaAs/AlGaAs core-shell nanowires using alternative source materials,K. Sladek, V. Klinger, M. Akabori, H. Hardtdegen and D. Gruetzmacher,3rd Nanowire Growth Workshop 2008, Duisburg, Germany, September 15-16 (2008)
  • 103. InGaAs/InP lateral wire growth on SiO2/InP(001) masked substrates,M. Akabori, V. A. Guzenko, Th. Schaepers and H. Hardtdegen,3rd Nanowire Growth Workshop 2008, Duisburg, Germany, September 15-16 (2008)
  • 104. Influence of nitrogen carrier gas on SA-MOVPE of InAs nanowires,M. Akabori, K. Sladek, H. Hardtdegen, Th. Schaepers and D. Gruetzmacher,3rd Nanowire Growth Workshop 2008, Duisburg, Germany, September 15-16 (2008)
  • 105. Enhancement of Rashba spin-orbit coupling by decrease of quantum well thickness,Th. Schaepers, V. A. Guzenko, A. Bringer, M. Akabori, M. Hagedorn and H. Hardtdegen,The 5th International Conference on Physics and Application of Spin-related Phenomena in Semiconductors, Foz do Iguacu, Brazil, August 3-6 (2008)
  • 106. InxGa1-xAs/InP selective area MOVPE for non-magnetic semiconductor spintronics,M. Akabori, V. A. Guzenko, Th. Schaepers and H. Hardtdegen,14th International Conference of Metalorganic Vapor Phase Epitaxy, Mets, France, June 1-6 (2008)
  • 107. Optimization of GaInAs/InP heterostructures for non-magnetic semiconductor spintronics,M. Akabori, M. Hagedorn, V. A. Guzenko, Th. Schaepers and H. Hardtdegen,Nanoelectronics Days 2008, Aachen, Germany, May 13-16 (2008)
  • 108. Optimization of InP/GaInAs structures with respect to Rashba spin-orbit coupling,M. Akabori, M. Hagedorn, V. A. Guzenko, Th. Schaepers and H. Hardtdegen,the 72nd Annual Meeting of the Deutsche Physikalische Gesellschaft and DPG - spring meeting of the Division Condensed Matter , Berlin, Germany, February 25-29 (2008)
  • 109. SiO2/Si基板に貼付けられたInGaAs/InAlAsメタモルフィックへテロ構造,進藤正典、Y. ジョン、工藤昌宏、田中成明、赤堀誠志、鈴木寿一,第55回応用物理学関係連合講演会、船橋(2008)
  • 110. In0.53Ga0.47As/In0.77Ga0.23As/InP-2DEGにおけるスピン-軌道相互作用のチャネル層厚依存性,赤堀誠志、M. ハーゲドン、V. グゼンコ、Th. シェーパーズ、H. ハートディーゲン,第55回応用物理学関係連合講演会、船橋(2008)
  • 111. Characterization and Weak-Antilocalization measurements of InGaAs/InP quantum wire structures,M. Hagedorn, M. Akabori, H. Hardtdegen, V. Guzenko and Th. Schaepers,the 72nd Annual Meeting of the Deutsche Physikalische Gesellschaft and DPG - spring meeting of the Division Condensed Matter , Berlin, Germany, February 25-29 (2008)
  • 112. Spin-orbit coupling in InGaSb/InAlSb and InGaAs/InP 2DEGs,V. A. Guzenko, M. Akabori, Th. Schaepers, Se. Estevez, H. Hardtdegen, T. Sato, T. Suzuki and S. Yamada,the 72nd Annual Meeting of the Deutsche Physikalische Gesellschaft and DPG - spring meeting of the Division Condensed Matter , Berlin, Germany, February 25-29 (2008)
  • 113. Spin injection in FM/2DEG/FM structures in high-quality In0.75Ga0.25As/In0.75A0.25lAs inverted HEMTs,H. Choi, A. Nogami, T. Kakegawa, M. Akabori and S. Yamada,the 17th International Conference on Electronic Properties of Two-Dimensional Systems, Genoa, Italy, July 16-20 (2007)
  • 114. Spin-orbit coupling in InGaSb/InAlSb,M. Akabori, V. A. Guzenko, T. Sato, Th. Schaepers, T. Suzuki and S. Yamada,2007 Workshop of Virtual Institute for Spin-electronics, Aachen, Germany, April 16-17 (2007)
  • 115. High Electron Mobility in Epitaxial Lifted-o_ InGaAs/InAlAs Metamorphic Heterostructures Bonded on AlN Ceramic Substrates,Y. Jeong, M. Shindo, M. Akabori and T. Suzuki,the 34th International Symposium on Compound Semiconductors, Kyoto, October 15-18 (2007)
  • 116. Fabrication of 3D micro/nano-structures based on MBE grown strained semiconductor layers,H. Iwase, H. Choi, M. Akabori, T. Suzuki, S. Yamada, D. Yamamoto and T. Ando,the 13th International Conference on Modulated Semiconductor Structures, Genoa, Italy, July 16-20 (2007)
  • 117. MBE成長半導体歪み構造を用いた微細立体構造の作製,岩瀬比宇麻、赤堀誠志、鈴木寿一、山田省二,第68回応用物理学会学術講演会、札幌 (2007).
  • 118. InGaAs/InAlAsメタモルフィックへテロ構造のエピタキシャルリフトオフとAlNセラミック基板への貼付,進藤正典、Y. ジョン、田中成明、赤堀誠志、鈴木寿一,第68回応用物理学会学術講演会、札幌 (2007)
  • 119. InGaAs/InAlAs逆構造HEMT2次元電子ガスにおけるゲート制御スピン軌道相互作用,山田省二、野上敦樹、崔賢光、赤堀誠志、掛川智康、鈴木寿一,日本物理学会第62回年次大会、鹿児島(2007)
  • 120. GaAs(001)基板上のInGaSb/InAlSbヘテロ接合における二次元電子ガス,鈴木寿一、佐藤拓、赤堀誠志、山田省二,電子情報通信学会技術研究報告、能美(2006)

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