大平　圭介 （オオダイラ　ケイスケ）　准教授
グリーンデバイス研究センター

124件中101-120件目

• 101.　High-Quality Polycrystalline Silicon Films with Long Carrier Lifetime Prepared by Flash Lamp Annealing of Cat-CVD Amorphous Silicon and Sucsessive High-pressure Water Vapor Annealing，Y. Endo, T. Fujiwara, S. Nishizaki, K. Nishioka, and H. Matsumura，Extended Abstract of 17th International Photovoltaic Science and Engineering Conference， Fukuoka, Japan， 3-7 December, 2007
• 102.　Structural Investigation of Polycrystalline Silicon Films Formed on Glass Substrates by Flash Lamp Annealing of Precursor Amorphous Silicon，K. Ohdaira, T. Fujiwara, Y. Endo, S. Nishizaki, K. Nishioka, and H. Matsumura，Extended Abstract of 17th International Photovoltaic Science and Engineering Conference， Fukuoka, Japan， 3-7 December, 2007
• 103.　Formation of Polycrystalline Si Films over 3 μm in Thickness on Quartz Substrates by Flash Lamp Annealing，K. Ohdaira, Y. Endo, T. Fujiwara, S. Nishizaki, K. Nishioka, H. Matsumura, T. Karasawa, and T. Torikai，Proceedings of 22nd European Photovoltaic Solar Energy Conference and Exhibition， Milan, Italy， 3-7 September 2007
• 104.　Antireflection Subwavelength Structure Formed by Wet Process Using Nano Particles of Noble Metal Catalyst，K. Nishioka, S. Horita, K. Ohdaira, H. Matsumura, Y. Takahashi, and T. Fuyuki，Extended Abstract of 17th International Photovoltaic Science and Engineering Conference， Fukuoka, Japan， 3-7 December, 2007
• 105.　Feasibility Study on High Efficiency Poly-Si Thin Film Solar Cells Formed by Flash Lamp Annealing of Cat-CVD Amorphous Silicon，T. Fujiwara, Y. Endo, S. Nishizaki, K. Ohdaira, K. Nishioka, and H. Matsumura，Extended Abstract of 17th International Photovoltaic Science and Engineering Conference， Fukuoka, Japan， 3-7 December, 2007
• 106.　Improvement in the conversion efficiency of single-junction SiGe solar cells by international introduction of the compositional distribution，M. Tayanagi, N. Usami, W. Pan, K. Ohdaira, K. Fujiwara, Y. Nose, and K. Nakajima，J. Appl. Phys. 101 (2007) 054504
• 107.　Effect of the compositional distribution on the photovoltaic power conversion of SiGe solar cells，N. Usami, W. Pan, K. Fujiwara, M. Tayanagi, K. Ohdaira, and K. Nakajima，Sol. Energy Mat. Sol. Cells 91 (2007) pp. 123-128.
• 108.　High-Quality Polycrystalline Silicon Films with MInority Carrier Lifetimes over 5 μs Formed by Flash Lamp Annealing of Precursor Amorphous Silicon Films Prepared by Catalytic Chemical Vapor Deposition，K. Ohdaira, S. Nishizaki, Y. Endo, T. Fujiwara, N. Usami, K. Nakajima, and H. Matsumura，Jpn. J. Appl. Phys. 46 (2007) pp. 7198-7203
• 109.　Formation of Highly Uniform Micrometer-Order-Thick Polycrystalline Silicon Films by Flash Lamp Annealing of Amorphous Silicon on Glass Substrates，K. Ohdaira, Y. Endo, T. Fujiwara, S. Nishizaki, and H. Matsumura，Jpn. J. Appl. Phys. 46 (2007) pp.7603-7606
• 110.　Relationship between Textured Structure of Substrates and Defect Density of Catalytic Chemical Vapor Deposition Amorphous Silicon Films，K. Sugita, K. Koyama, K. Ohdaira, and H. Matsumura，Jpn. J. Appl. Phys. 46 (2007) pp. 2852-2857.
• 111.　High-Efficiency Concave and Conventional Solar Cell Integration System Using Focused Reflected Light，K. Ohdaira, K. Fujiwara, W. Pan, N. Usami and K. Nakajima，Jpn. J. Appl. Phys.，45，1664，2006
• 112.　Influence of stacked He Islands on the dark current-voltage characteristics and the conversion efficiency of the solar cells，A. Alguno, N. Usami, K. Ohdaira, W. Pan, M. Tayanagi, and K. Nakajima，Thin Solid Films 508 (2006) pp.402-405.
• 113.　Solar cell system using a polished concave Si-crystal mirror，K. Nakajima, K. Ohdaira, K. Fujiwara and W. Pan，Sol. Energy Mater. Sol. Cells，88，323，2005
• 114.　Floating Zone Growth of Si Bicrystals Using Seed Crystals with Artificially Designed Grain Boundary Configuration，N. Usami, M. Kitamura, T. Sugawara, K. Kutsukake, K. Ohdaira, Y. Nose, K. Fujiwara, T. Shishido and K. Nakajima，Jpn. J. Appl. Phys.，44，L778，2005
• 115.　Analysis of the Dark-Current Density in Solar Cells Based on Multicrystalline SiGe，K. Ohdaira, N. Usami, W. Pan, K. Fujiwara and K. Nakajima，Jpn. J. Appl. Phys.，44，8019，2005
• 116.　Exciton recombination process in GaAs/AlAs heterostructures in pulsed high magnetic fields and uniaxial pressure，K. Ono, K. Uchida, N. Miura, Y. Hirayama, K. Ohdaira and Y. Shiraki，Physica E，21，698，2004
• 117.　Control of type-I and type-II band alignments in AlInAs/AlGaAs self-assembled quantum dots by changing AlGaAs compositions，K. Ohdaira, H. Murata, S. Koh, M. Baba, H. Akiyama, R. Ito and Y. Shiraki，Physica E，21，308，2004
• 118.　Magneto-photoluminescence studies of AlInAs/AlGaAs self-assembled quantum dots with type-II band alignments，K. Ohdaira, K. Ono, K. Uchida, S. Koh, N. Miura and Y. Shiraki，J. Phys. Soc. Jpn.，73，480，2004
• 119.　Observation of band alignment transition from type-I to type-II in AlInAs/AlGaAs self-assembled quantum dots，K. Ohdaira, H. Murata, S. Koh, M. Baba, H. Akiyama, R. Ito and Y. Shiraki，J. Phys. Soc. Jpn.，72，3271，2003
• 120.　Observation of negatively charged excitons and excited states of multi-excitons in quantum dots embedded in modulation doping structures，K. Ohdaira, N. Usami, K. Ota and Y. Shiraki，Physica E，11，68，2001

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