北陸先端科学技術大学院大学 [JAIST] - 研究者総覧
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堀田 將 (ホリタ ススム) 教授
融合科学系、マテリアルサイエンス系、応用物理学領域

101件中1-20件目

  • 1. CNPを被覆したガラス基板上への結晶化YSZ薄膜の室温堆積,堀田 將、柳生 瞳、 能木 雅也,第65回応用物理学会春季学術講演会,早稲田大学・西早稲田キャンパス,2018年3月17日(土)から20日(火)
  • 2. Room-Temperature Deposition of a Crystallized Dielectric YSZ Film on Glass Substrate Covered with Cellulose Nanopaper,Susumu Horita, Jyotish Patidar, Hitomi Yagyu, and Masaya Nogi,The 24th International Display Workshops(IDW'17) in conjunction with Asia Display 2017, Sendai, Japan,December 6-8, 2017
  • 3. トリクロロエチレンによる有機SiガスAPCVD低温酸化Si膜中の残留OH量減少の効果,堀田 將, Jain Puneet,第78回応用物理学会秋季学術講演会、6a-PA9-4,福岡国際会議場・国際センター・福岡サンパレス(福岡県、福岡市),2017年9月6日
  • 4. Effect of Trichloroethene (TCE) on Deposition Rate and Film Quality of Low-Temperature SiO2 Films Grown Using Silicone Oil and Ozone Gas,Puneet Jain and Susumu Horita,The 24th Inter. Workshop on Active-Matrix Flat Panel Displays and Devices (AM-FPD 17,Ryukoku University Avanti Kyoto Hall, Kyoto, Japan,July 4-7, 2017
  • 5. Progress of Low-Temperature Fabrication Technologies of Thin Film Transistors for Preservation of GlobalEnvironment,Susumu Horita,Internationa Conference on Computer, Communication, Chemical, Materials & Electronic Engineering, IC4ME2,Fuculty of Engineeering, University of Rajshahi,March, 24 to 25, 2016
  • 6. YSZ結晶化誘発層と2 段階パルスレーザ照射法を用いた固相結晶化Si薄膜のTFT特性,堀田 將、マイ リアン,第63回応用物理学会春季学術講演会,東京工業大学 大岡山キャンパス,2016年3月19〜22日
  • 7. Progress of Low-Temperature Fabrication Technologies of Thin Film Transistors for Preservation of GlobalEnvironment,Susumu Horita,Internationa Conference on Computer, Communication, Chemical, Materials & Electronic Engineering IC4ME2,Fuculty of Engineeering, University of Rajshahi,March, 24 to 25, 2016
  • 8. Low-Temperature Fabrication of Crystallized Si Films for Display and Solar Cell Applications,Susumu Horita,2012 IEEE International Conference on Electronics Design, Systems and Applications, Abstract pp.19.,Seri Pacific Hotel, Kuala Lumpur, Malaysia,November 5-6, 2012
  • 9. 非晶質Si薄膜の固相結晶化に及ぼすイットリア安定化ジルコニア(YSZ)の影響,堀田 將、赤堀 達矢,薄膜材料デバイス研究会第7回研究集会「薄膜デバイスの理解と解析」アブストラクト集、6P12, pp.138-141.,なら100年会館(奈良市),2010/11/6
  • 10. YSZ層上の直接体積Si薄膜の低温結晶化におけるF+Y単分子層のパッシベイション効果,堀田將,第71回応用物理学会学術講演会, 15a-ZD-9, 13-139ページ。,長崎市長崎大学文教キャンパス,2010/9/15
  • 11. Passivation Effect of F+Y Monolayer on Yttria-stabilized Zirconia (YSZ) Layers of LTPS,S. Horita,Proc. of the 16th International Display Workshops (IDW'10), FMCp-24, pp.889-892,,Fukuoka International Congress Center, Fukuoka, Japan,2010/12/2
  • 12. Low-temperature Growth of Crystallized Si Film on Yttria-Stabilized Zirconia Stimulation Layer,S. Hana, T. Akahori and S. Horita,Proc. of the 15th International Display Workshops (IDW'08), FMC1-1, pp.271-274, World Convention Center Summit,Miyazaki, Japan,2009/12/9-12/11
  • 13. Low-temperature Fabrication of a Crystallized Si Film Deposited on a Glass Substrate using an Yttria-stabilized Zirconia Seed Layer,S. Hana and S. Horita,Material Research Society(MRS) Spring Meeting,(2009), A5.5.,San Francisco, U.S.A.,2009/4/13-4/17
  • 14. New Functional Device Characteristics with 2-Dimensional Array of Si Nanodisk Fabricated by Combination of Bio-Template and Ultimate Top-down Etching,M. Igarashi, C.-H. Huang, M. Tomura, M. Takeguchi, S. Horita, Y. Uraoka, T. Fuyuki, I. Yamashita, T. Morie, and S. Samukawa,Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials (SSDM 2009), J-9-3, pp.1364-1365.,Miyagi, Japan, 2009/10/7-10/9
  • 15. A New Structure of nanodisk (Stacked Nanodisk) fabricated by bio-nano-process and defect-free neutral beam etching,C.-. Huang, M. Igarashi, M. Tomura, M. Takeguchi, S. Horita, Y. Uraoka, T. Fuyuki, I. Yamashita, and S. Samukawa,Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials (SSDM 2009), J-9-4,pp.1366-1367.,Miyagi, Japan,2009/10/7-10/9
  • 16. Crystalline Properties of the Low-temperature Polycrystalline Silicon Film on Glass Substrate Deposited By Yttria-Stabilized Zirconia Stimulation Layer Method,S. Hana, T. Akahori, and S. Horita,薄膜材料デバイス研究会第6回研究集会「如何に作り如何に測るか」、アブストラクト集、2P07, pp.106-109.,京都市龍谷大学大宮学舎,2009/11/2-11/3
  • 17. Nondestructive Readout of Integrated Ferroelectric Gate FET Memory with Intermediate Electrode by New Data Writing and Reading Method,B. N. Q. Trinh and S. Horita,International Symposium on Integrated Ferroelectrics ISIF 2008, 5-72-P.,Singapore,2008/6/10
  • 18. Using New Operation Method for Improvement in Nondestructive Readout of Ferroelectric Gate FET Memory with an Intermediate Electrode,B. N. Q. Trinh and S. Horita,International Symposium on Integrated Ferroelectrics ISIF 2008, 5-124-C.,Singapore.,2008/6/10
  • 19. 中間電極を用いたFET型強誘電体メモリの書込み、読出しパルスの最適化,堀田 將、 B. N. Q. Trinh,第69回応用物理学会学術講演会, 3a-K-6, 466ページ。,愛知県春日井市中部大学,2008/9/3
  • 20. Effect of Y2O3 Content in a YSZ Seed Layer on Crystallization of a Low-Temperature-Deposited Si Film,S. Hana and S. Horita,The 15th International Display Workshops (IDW'08),AMDp4-2, pp.639-642, Nigata, Japan,2008/12/4

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