北陸先端科学技術大学院大学 [JAIST] - 研究者総覧
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堀田 將 (ホリタ ススム) 教授
融合科学系、マテリアルサイエンス系、応用物理学領域

99件中1-20件目

  • 1. Effect of Trichloroethene (TCE) on Deposition Rate and Film Quality of Low-Temperature SiO2 Films Grown Using Silicone Oil and Ozone Gas,Puneet Jain and Susumu Horita,The 24th Inter. Workshop on Active-Matrix Flat Panel Displays and Devices (AM-FPD 17,Ryukoku University Avanti Kyoto Hall, Kyoto, Japan,July 4-7, 2017
  • 2. トリクロロエチレンによる有機SiガスAPCVD低温酸化Si膜中の残留OH量減少の効果,堀田 將, Jain Puneet,第78回応用物理学会秋季学術講演会、6a-PA9-4,福岡国際会議場・国際センター・福岡サンパレス(福岡県、福岡市),2017年9月6日
  • 3. Progress of Low-Temperature Fabrication Technologies of Thin Film Transistors for Preservation of GlobalEnvironment,Susumu Horita,Internationa Conference on Computer, Communication, Chemical, Materials & Electronic Engineering, IC4ME2,Fuculty of Engineeering, University of Rajshahi,March, 24 to 25, 2016
  • 4. Progress of Low-Temperature Fabrication Technologies of Thin Film Transistors for Preservation of GlobalEnvironment,Susumu Horita,Internationa Conference on Computer, Communication, Chemical, Materials & Electronic Engineering IC4ME2,Fuculty of Engineeering, University of Rajshahi,March, 24 to 25, 2016
  • 5. YSZ結晶化誘発層と2 段階パルスレーザ照射法を用いた固相結晶化Si薄膜のTFT特性,堀田 將、マイ リアン,第63回応用物理学会春季学術講演会,東京工業大学 大岡山キャンパス,2016年3月19〜22日
  • 6. Low-Temperature Fabrication of Crystallized Si Films for Display and Solar Cell Applications,Susumu Horita,2012 IEEE International Conference on Electronics Design, Systems and Applications, Abstract pp.19.,Seri Pacific Hotel, Kuala Lumpur, Malaysia,November 5-6, 2012
  • 7. 非晶質Si薄膜の固相結晶化に及ぼすイットリア安定化ジルコニア(YSZ)の影響,堀田 將、赤堀 達矢,薄膜材料デバイス研究会第7回研究集会「薄膜デバイスの理解と解析」アブストラクト集、6P12, pp.138-141.,なら100年会館(奈良市),2010/11/6
  • 8. YSZ層上の直接体積Si薄膜の低温結晶化におけるF+Y単分子層のパッシベイション効果,堀田將,第71回応用物理学会学術講演会, 15a-ZD-9, 13-139ページ。,長崎市長崎大学文教キャンパス,2010/9/15
  • 9. Passivation Effect of F+Y Monolayer on Yttria-stabilized Zirconia (YSZ) Layers of LTPS,S. Horita,Proc. of the 16th International Display Workshops (IDW'10), FMCp-24, pp.889-892,,Fukuoka International Congress Center, Fukuoka, Japan,2010/12/2
  • 10. Crystalline Properties of the Low-temperature Polycrystalline Silicon Film on Glass Substrate Deposited By Yttria-Stabilized Zirconia Stimulation Layer Method,S. Hana, T. Akahori, and S. Horita,薄膜材料デバイス研究会第6回研究集会「如何に作り如何に測るか」、アブストラクト集、2P07, pp.106-109.,京都市龍谷大学大宮学舎,2009/11/2-11/3
  • 11. Low-temperature Growth of Crystallized Si Film on Yttria-Stabilized Zirconia Stimulation Layer,S. Hana, T. Akahori and S. Horita,Proc. of the 15th International Display Workshops (IDW'08), FMC1-1, pp.271-274, World Convention Center Summit,Miyazaki, Japan,2009/12/9-12/11
  • 12. A New Structure of nanodisk (Stacked Nanodisk) fabricated by bio-nano-process and defect-free neutral beam etching,C.-. Huang, M. Igarashi, M. Tomura, M. Takeguchi, S. Horita, Y. Uraoka, T. Fuyuki, I. Yamashita, and S. Samukawa,Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials (SSDM 2009), J-9-4,pp.1366-1367.,Miyagi, Japan,2009/10/7-10/9
  • 13. New Functional Device Characteristics with 2-Dimensional Array of Si Nanodisk Fabricated by Combination of Bio-Template and Ultimate Top-down Etching,M. Igarashi, C.-H. Huang, M. Tomura, M. Takeguchi, S. Horita, Y. Uraoka, T. Fuyuki, I. Yamashita, T. Morie, and S. Samukawa,Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials (SSDM 2009), J-9-3, pp.1364-1365.,Miyagi, Japan, 2009/10/7-10/9
  • 14. Low-temperature Fabrication of a Crystallized Si Film Deposited on a Glass Substrate using an Yttria-stabilized Zirconia Seed Layer,S. Hana and S. Horita,Material Research Society(MRS) Spring Meeting,(2009), A5.5.,San Francisco, U.S.A.,2009/4/13-4/17
  • 15. 中間電極を用いたFET型強誘電体メモリの書込み、読出しパルスの最適化,堀田 將、 B. N. Q. Trinh,第69回応用物理学会学術講演会, 3a-K-6, 466ページ。,愛知県春日井市中部大学,2008/9/3
  • 16. Effect of Y2O3 Content in a YSZ Seed Layer on Crystallization of a Low-Temperature-Deposited Si Film,S. Hana and S. Horita,The 15th International Display Workshops (IDW'08),AMDp4-2, pp.639-642, Nigata, Japan,2008/12/4
  • 17. Writing Disturbance-Free of a Ferroelectric Gate Field Effect Transistor Memory with an Intermediate Electrode,S. Horita and B. N. Q. Trinh,Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials (SSDM 2008), P-4-8L, pp.470.,Tsukuba, Japan,2008/9/25
  • 18. Effect of Surface Treatment of YSZ Seed Layer on Low-temperature Growth of a Poly-Si Thin Film on a Glass Substrate,Sukreen Hana and Susumu Horita,Digest of Technical Papers, The 15th International Workshop on Active-Matrix Flat Panel Displays(AM-FPD 08), P-L4, pp.243-244.,The National Museum of Emerging Science and Innovation(MIRAIKAN), Tokyo, Japan.,2008/7/3
  • 19. Nondestructive Readout of Integrated Ferroelectric Gate FET Memory with Intermediate Electrode by New Data Writing and Reading Method,B. N. Q. Trinh and S. Horita,International Symposium on Integrated Ferroelectrics ISIF 2008, 5-72-P.,Singapore,2008/6/10
  • 20. Using New Operation Method for Improvement in Nondestructive Readout of Ferroelectric Gate FET Memory with an Intermediate Electrode,B. N. Q. Trinh and S. Horita,International Symposium on Integrated Ferroelectrics ISIF 2008, 5-124-C.,Singapore.,2008/6/10

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