北陸先端科学技術大学院大学 [JAIST] - 研究者総覧
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堀田 將 (ホリタ ススム) 教授
融合科学系、マテリアルサイエンス系、応用物理学領域

53件中1-20件目

  • 1. Dependences of deposition rate and OH content on concentration of added trichloroethylene in low-temperature silicon oxide films deposited using silicone oil and ozone gas,Susumu Horita and Puneet Jain,Japanese Journal of Applied Physics,57,3S,.03DA02, 1-7,2018/1/23
  • 2. Effect of trichloroethylene enhancement on deposition rate of low-temperature silicon oxide films by silicone oil and ozone,Susumu Horita and Puneet Jain,Jpn. J. Appl. Phys.,Vol. 56, No. 8,pp088003, 1-3,2017/8
  • 3. Material properties of pulsed-laser crystallized Si thin films grown on yttria-stabilized zirconia crystallization-induction layersby two-step irradiation method,Mai Thi Kieu Lien and Susumu Horita,Jpn. J. Appl. Phys.,Vol. 55,No. 3S,pp.03CB02, 1-8,2016/03/
  • 4. Improving crystalline quality of polycrystalline silicon thin films crystallized on yttria-stabilized zirconia crystallization-induction layersby the two-step irradiation method of pulsed laser annealing,Mai Thi Kieu Lien and Susumu Horita,Jpn. J. Appl. Phys, 54,3S, pp.03CA01,1-8,2015/03
  • 5. Effect of Crystallization-Induction Layer of Yttria-Stabilized Zirconia on Solid State Crystallization of an Amorphous Si Film,Susumu Horita and Tetsuya Akahori,Jpn. J. Appl. Phys.,Vol. 53,No. 3,pp.030303,1-4,2014/1/31 Online
  • 6. Raman Spectra Analysis of Si Films Solid-Phase-Crystallized on Glass Substrates by Pulse Laser with Crystallization-Induction Layers of Yttria-Stabilized Zirconia,Mai Thi Kieu Lien and Susumu Horita,Jpn. J. Appl. Phys., 1-7,Vol. 53,No. 3S1,pp.03CB01,2014/2/6 Online
  • 7. Low-Temperature Crystallization of Silicon Films Directly Deposited on Glass Substrates Covered with Yttria-Stabilized Zirconia Layers,Susumu Horita and Sukreen Hana,Jpn. J. Appl. Phys.,Vol. 49,No. 10,pp.105801,1-11,2010/10
  • 8. Enhancement of the crystalline quality of reactively sputtered yttria-stabilized zirconia by oxidation of the metallic target surface,S. Hana, K. Nishioka, and S. Horita,Thin Solid Films, Vol. 517, Issue 20, pp.5830-5836.,2009/8
  • 9. Disturb-Free Writing Operation for Ferroelectric Gate Field-Effect Transistor Memories with Intermediate Electrodes, S. Horita and B. N. Q. Trinh,IEEE Transaction on Electron Devices,Vol. 56,No. 12,pp. 3090-3096,2009/12
  • 10. Low-Temperature Deposition of Silicon Oxide Film from the Reaction of Silicone Oil Vapor and Ozone Gas,S. Horita, K. Toriyabe, and K. Nishioka,Jpn. J. Appl. Phys., Vol. 48, No. 3, pp. 035501-1,7.,2009/3
  • 11. Low Temperature Deposition and Crystallization of Silicon Film on an HF-etched Polycrystalline Yttria-Stabilized Zirconia Layer Rinsed with Ethanol Solution,S. Horita and H. Sukreen,Appl. Phys. Express, Vol. 2 , No .4, pp. 04120-1,3.,2009/4
  • 12. Antireflection subwavelength structure of silicon surface formed by wet process using catalysis of single nano-sized gold particle,K. Nishioka, S. Horita, K. Ohdaira, and H. Matsumura,Solar Energy Materials & Solar Cells Vol. 92, pp. 919-922,2008/4
  • 13. Nondestructive Readout of Ferroelectric-Gate Field-Effect Transistor Memory with an Intermediate Electrode by Using an Improved Operation Method, S. Horita and B. N. Q. Trinh,IEEE Transaction on Electron Devices, Vol. 55, No. 11, pp. 3200-3207.,2008/11
  • 14. Periodic arrays of submicron Si and Ni dots on SiO2 fabricated using linearly polarized Nd:YAG pulsed laser,K. Nishioka and S. Horita,Appl. Phys. A, Vol. 91, pp. 235-240,2008/2
  • 15. Periodically Aligned Submicron Dots of Silicon and Nickel Fabricated by Linearly Polarized Nd:YAG Pulse Laser,K. Nishioka and S. Horita,Jpn. J. Appl. Phys.,46,No.23,L556-L558,2007/6
  • 16. Surface modification of an amorphous Si thin film crystallized by a linearly polarized Nd:YAG pulse laser beam,S. Horita, H. Kaki, and K. Nishioka,J. Appl. Phys.,102,1,013501-1 -013501-10,2007/7
  • 17. Periodically Aligned Submicron Lines of Silicon and Nickel Fabricated by Linearly Polarized Nd:YAG Pulse Laser,K. Nishioka and S. Horita,Jpn. J. Appl. Phys.,46,7A,4154-4159,2007/7
  • 18. Multi-Reflection Effect on Formation of Periodic Surface Structure on an Si Film Melting-Crystallized by a Linearly Polarized Nd:YAG Pulse Laser Beam,S. Horita, H. Kaki, and K. Nishioka,Jpn. J. Appl. Phys,46,6A,3527-3533,2007/6
  • 19. Periodic Alignment of Silicon Dot Fabricated by LinearlyPolarized Nd:YAG Pulse Laser,K. Nishioka and S. Horita,Mat.Res.Soc.Symp.Proc.,910,910-A15-03,2006
  • 20. Operation of Ferroelectric Gate Field-Effect Transistor Memory with Intermediate Electrode using Polycrystalline Capacitor and Metal-Oxide-Semiconductor Field-Effect Transistor,B. N. Q. Trinh and S. Horita,Jpn.J.Appl.Phys.,45,9B,7341-7344,2006/9

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