北陸先端科学技術大学院大学 [JAIST] - 研究者総覧
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赤堀 誠志 (アカボリ マサシ) 准教授
ナノマテリアルテクノロジーセンター

57件中1-20件目

  • 1. Structural, optical and electrical properties of well-ordered ZnO nanowires grown on (111) oriented Si, GaAs and InP substrates by electrochemical deposition method,H. T. Pham, T. D. Nguyen, D. Q. Tran, M. Akabori,Materials Research Express,Vol. 4,pp. 055002-1-10,2017
  • 2. Nitrogen GFIS-FIB secondary electron imaging: A first look,M. E. Schmidt, A. Yasaka, M. Akabori, H. Mizuta,Microscopy and Microanalysis, in press.
  • 3. In-plane isotropic magnetic and electrical properties of MnAs/InAs/GaAs(111)B hybrid structure,Md. E. Islam and M. Akabori,Physica B, in press.
  • 4. Band-like transport in highly crystalline graphene films from defective graphene oxides,R. Negishi, M. Akabori, T. Ito, Y. Watanabe, and Y. Kobayashi,Scientific Reports,Vol. 6,pp. 28936-1-10,2016
  • 5. Interaction study of nitrogen ion beam with silicon,M. E. Schmidt, X. Zhang, Y. Oshima, L. T. Anh, A. Yasaka, T. Kanzaki, M. Muruganathan, M. Akabori, T. Shimoda, and H. Mizuta,J. Vac. Sci. Tech. B,Vol. 35,pp. 03D101-1-7,2017
  • 6. Characterization of spin-orbit coupling in gated wire structures using Al2O3/In0.75Ga0.25As/In0.75Al0.25As inverted heterojunctions,T. Ohori, M. Akabori, S. Hidaka and S. Yamada,J. Appl. Phys.,120,142123,2016
  • 7. Growth and magnetic properties of MnAs/InAs hybrid structure on GaAs(111)B,Md. E. Islam and M. Akabori,J. Crystal Growth,Vol. 463,pp. 86-89,2017
  • 8. Hydrogen intercalation: An approach to eliminate silicon dioxide substrate doping to graphene,T. Iwasaki, J. Sun, N. Kanetake, T. Chikuba, M. Akabori, M. Muruganathan, and H. Mizuta,Appl. Phys. Express,Vol. 8,pp. 015101-1-4,2015
  • 9. High-In-content InGaAs quantum point contacts fabricated using focused ion beam system equipped with N2 gas field ion source,M. Akabori, S. Hidaka, S. Yamada, T. Kozakai, O. Matsuda, and A. Yasaka,Jpn. J. Appl. Phys., 53,pp. 118002-1-3,2014
  • 10. Magneto-transport properties of InAs nanowires laterally-grown by selective area molecular beam epitaxy on GaAs (110) masked substrates,M. Akabori and S. Yamada,AIP Conf. Proc,1566,219,2013
  • 11. Verification of electrical spin injection into InGaAs two-dimensional electron gas from CoFe electrode by four-terminal non-local geometry,S. Hidaka, T. Kondo, M. Akabori, and S. Yamada,AIP Conf. Proc,1566,329,2013
  • 12. High-efficient long spin coherence electrical spin injection in CoFe/InGaAs two-dimensional electron gas lateral spin-valve devices,S. Hidaka, M. Akabori, and S. Yamada,Appl. Phys. Express,Vol. 5,pp. 113001-1-3,2012
  • 13. Electron distribution and scattering in InAs films on low-k flexible substrates,C. T. Nguyen, H.-A. Shih, M. Akabori, and T. Suzuki,Appl. Phys. Lett,Vol. 100,pp. 232103-1-4,2012
  • 14. Realization of In0.75Ga0.25As two-dimensional electron gas bilayer system for spintronics devices based on Rashba spin-orbit interaction,M. Akabori, S. Hidaka, H. Iwase, S. Yamada, and U. Ekenberg,J. Appl. Phys,Vol. 112,pp. 113711-1-6,2012
  • 15. Spring Characteristics of Circular Arc Shaped 3D Micro cantilevers Fabricated Using III-V Semiconductor Strain-driven Bending Process,T. K. Sasaki, H. Iwase, J. Wang, M. Akabori, and S. Yamada,AIP Conf. Proc.,Vol. 1399,pp. 1067-1068,2011
  • 16. Growth and Magneto-transport Characterization of Double-doped InGaAs/InAlAs Heterostructures with High Indium Compositions,M. Akabori, K. Morimoto, W. Wei, H. Iwase, and S. Yamada,AIP Conf. Proc.,Vol. 1399,pp. 725-726,2011
  • 17. Application of sputtering-deposited AlN films to gate dielectric for AlGaN/GaN metal-insulator-semiconductor heterojunction field-effect transistor,H.-A. Shih, M. Kudo, M. Akabori, and T. Suzuki,Jpn. J. Appl. Phys.,Vol. 51,pp. 02BF01-1-4,2012
  • 18. Selective area molecular beam epitaxy of InAs on GaAs (110) masked substrates for direct fabrication of planar nanowire field-effect transistors,M. Akabori, T. Murakami, and S. Yamada,J. Crystal Growth,Vol. 345,pp. 22-26,2012
  • 19. Fabrication and analysis of AlN/GaAs(001) and AlN/Ge/GaAs(001) metal-insulator-semiconductor structures,M. Kudo, H.-A. Shih, M. Akabori, and T. Suzuki,Jpn. J. Appl. Phys.,Vol. 51,pp. 02BF07-1-5,2012
  • 20. Spin-orbit coupling and phase coherence in InAs nanowires,S. Estevez Hernandez, M. Akabori, K. Sladek, Ch. Volk, S. Alagha, H. Hardtdegen, M. G. Pala, N. Demarina, D. Gruetzmacher, and Th. Schaepers,Phys. Rev. B,Vol. 82,pp. 235303-1-7,2010

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