赤堀　誠志 （アカボリ　マサシ）　准教授
ナノマテリアルテクノロジーセンター

48件中1-20件目

• 1.　Electron distribution and scattering in InAs films on low-k flexible substrates，C. T. Nguyen, H.-A. Shih, M. Akabori, and T. Suzuki，Appl. Phys. Lett，Vol. 100，pp. 232103-1-4，2012
• 2.　Magneto-transport properties of InAs nanowires laterally-grown by selective area molecular beam epitaxy on GaAs (110) masked substrates，M. Akabori and S. Yamada，accepted for publication in AIP Conf. Proc.
• 3.　High-efficient long spin coherence electrical spin injection in CoFe/InGaAs two-dimensional electron gas lateral spin-valve devices，S. Hidaka, M. Akabori, and S. Yamada，Appl. Phys. Express，Vol. 5，pp. 113001-1-3，2012
• 4.　Realization of In0.75Ga0.25As two-dimensional electron gas bilayer system for spintronics devices based on Rashba spin-orbit interaction，M. Akabori, S. Hidaka, H. Iwase, S. Yamada, and U. Ekenberg，J. Appl. Phys，Vol. 112，pp. 113711-1-6，2012
• 5.　Verification of electrical spin injection into InGaAs two-dimensional electron gas from CoFe electrode by four-terminal non-local geometry，S. Hidaka, T. Kondo, M. Akabori, and S. Yamada，accepted for publication in AIP Conf. Proc.
• 6.　Selective area molecular beam epitaxy of InAs on GaAs (110) masked substrates for direct fabrication of planar nanowire field-effect transistors，M. Akabori, T. Murakami, and S. Yamada，J. Crystal Growth，Vol. 345，pp. 22-26，2012
• 7.　Growth and Magneto-transport Characterization of Double-doped InGaAs/InAlAs Heterostructures with High Indium Compositions，M. Akabori, K. Morimoto, W. Wei, H. Iwase, and S. Yamada，AIP Conf. Proc.，Vol. 1399，pp. 725-726，2011
• 8.　Spring Characteristics of Circular Arc Shaped 3D Micro cantilevers Fabricated Using III-V Semiconductor Strain-driven Bending Process，T. K. Sasaki, H. Iwase, J. Wang, M. Akabori, and S. Yamada，AIP Conf. Proc.，Vol. 1399，pp. 1067-1068，2011
• 9.　Fabrication and analysis of AlN/GaAs(001) and AlN/Ge/GaAs(001) metal-insulator-semiconductor structures，M. Kudo, H.-A. Shih, M. Akabori, and T. Suzuki，Jpn. J. Appl. Phys.，Vol. 51，pp. 02BF07-1-5，2012
• 10.　Application of sputtering-deposited AlN films to gate dielectric for AlGaN/GaN metal-insulator-semiconductor heterojunction field-effect transistor，H.-A. Shih, M. Kudo, M. Akabori, and T. Suzuki，Jpn. J. Appl. Phys.，Vol. 51，pp. 02BF01-1-4，2012
• 11.　Improved gate-control in InAs nanowire structures by the use of GdScO3 as a gate dielectric，Ch. Volk, J. Schubert, K. Weis, S. Estevez Hernandez, M. Akabori, K. Sladek, H. Hardtdegen, and Th. Schaepers，Appl. Phys. A，Vol. 100，pp. 305-308，2010
• 12.　Electron transport properties of InAs ultra-thin films obtained by epitaxial lift-off and van der Waals bonding on flexible substrates，H. Takita, N. Hashimoto, C. T. Nguyen, M. Kudo, M. Akabori, and T. Suzuki，Appl. Phys. Lett，Vol. 97，pp. 012102-1-3，2010
• 13.　LaLuO3 as a high-k gate dielectric for InAs nanowire structures，Ch. Volk, J. Schubert, M. Akabori, K. Sladek, H. Hardtdegen and Th. Schaepers，Semicond. Sci. Tech，Vol. 25，pp. 085001-1-4，2010
• 14.　Spin-orbit coupling and phase coherence in InAs nanowires，S. Estevez Hernandez, M. Akabori, K. Sladek, Ch. Volk, S. Alagha, H. Hardtdegen, M. G. Pala, N. Demarina, D. Gruetzmacher, and Th. Schaepers，Phys. Rev. B，Vol. 82，pp. 235303-1-7，2010
• 15.　Spin-orbit coupling in GaxIn1-xAs/InP 2-dimensional electron gases and quantum wire structures，Th. Schaepers, V. A. Guzenko, A. Bringer, M. Akabori, M. Hagedorn and H. Hardtdegen，Semicond. Sci. Tech., 24，064001-1-11，2009
• 16.　MOVPE of n-doped GaAs and modulation doped GaAs/AlGaAs nanowires，K. Sladek, V. Klinger, J. Wensorra, M. Akabori, H. Hardtdegen, and D. Gruetzmacher，J. Crystal Growth，Vol. 312，pp. 635-640，2010
• 17.　Strain-enhanced electron mobility anisotropy in InxGa1−xAs/InP two-dimensional electron gases，M. Akabori, T. Q. Trinh, M. Kudo, Th. Schaepers, H. Hardtdegen, and T. Suzuki，Physica E，Vol. 42，pp. 1130-1133，2010
• 18.　Influence of growth temperature on the selective area MOVPE of InAs nanowires on GaAs (111) B using N2 carrier gas，M. Akabori, K. Sladek, H. Hardtdegen, Th. Schaepers and D. Gruetzmacher，J. Crystal Growth，Vol. 311，pp. 3813-3816，2009
• 19.　Fabrication of 3D micro-cantilevers based on MBE grown strained semiconductor layers，H. Iwase, H. Choi, M. Akabori, T. Suzuki, S. Yamada, D. Yamamoto and T. Ando，Physica E, Vol. 40, pp. 2210-2213 (2008)
• 20.　Spin injection in FM/2DEG/FM structures in high-quality In0.75Ga0.25As/In0.75A0.25lAs inverted HEMTs，H. Choi, A. Nogami, T. Kakegawa, M. Akabori and S. Yamada，Physica E, Vol. 40, pp. 1772-1774 (2008)

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