北陸先端科学技術大学院大学 [JAIST] - 研究者総覧
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鈴木 寿一 (スズキ トシカズ) 教授
ナノマテリアルテクノロジーセンター

61件中1-20件目

  • 1. Threshold voltages of Al2O3/AlGaN/GaN and AlTiO/AlGaN/GaN metal-insulator-semiconductordevices,S. P. Le, T. Ui, D. D. Nguyen, and T. Suzuki,49th Int. Conf. on Solid State Devices and Materials,N-3-04,(2017).
  • 2. Drain-induced barrier lowering in normally-off AlGaNGaN MOSFETs with single- or double-recessoverlapped gate,T. Sato, K. Uryu, J. Okayasu, M. Kimishima, and T. Suzuki,49th Int. Conf. on Solid State Devices and Materials,N-3-05,(2017).
  • 3. An InAs/high-k/low-k structure: Electron transport and interface analysis,T. Ui, R. Mori, S. P. Le, Y. Oshima, and T. Suzuki,AIP Advances,7,055303,(2017).
  • 4. Fabrication and characterization of InAs/high-k/low-k structures,T. Ui, R. Mori, S. P. Le, Y. Oshima, and T. Suzuki,48th Int. Conf. on Solid State Devices and Materials,N-1-04,(2016).
  • 5. Low-frequency noise exponents in InAs thin films on flexible or GaAs(001) substrates,S. P. Le, T. Ui, and T. Suzuki,43rd Int. Symp. on Compound Semiconductors,MoP-ISCS-017,(2016).
  • 6. Low-frequency noise in AlTiO/AlGaN/GaN metal-insulator-semiconductor heterojunction field-effect transistors,S. P. Le, T. Ui, T. Q. Nguyen, H.-A. Shih, and T. Suzuki,J. Appl. Phys.,119,204503,(2016).
  • 7. Low-frequency noise in InAs films bonded on low-k flexible substrates,S. P. Le, T. Ui, and T. Suzuki,Appl. Phys. Lett.,107,192103,(2015).
  • 8. Low-frequency noise in AlTiO/AlGaN/ GaN metal-insulator-semiconductor heterojunction field-effect transistors,S. P. Le, T. Ui, T. Q. Nguyen, H.-A. Shih, and T. Suzuki,47th Int. Conf. on Solid State Devices and Materials,(2015).
  • 9. Fabrication and characterization of AlTiO/InAlN/AlN/GaN metal-Insulator-semiconductor field-effect transistor,S. Yamaguchi, T. Ui, J. Liang, H.-A. Shih, and T. Suzuki,47th Int. Conf. on Solid State Devices and Materials,(2015).
  • 10. Gate-control efficiency and interface state density evaluated from capacitance-frequency-temperature mapping for GaN-based metal-insulator-semiconductor devices,H.-A. Shih, M. Kudo, and T. Suzuki,J. Appl. Phys.,116,184507,(2014).
  • 11. Low-frequency noise of intrinsic gated region in AlN/AlGaN/GaN metal-insulator-semiconductor heterojunction field-effect transistors,S. P. Le, T. Q. Nguyen, H.-A. Shih, M. Kudo, and T. Suzuki,46th Int. Conf. on Solid State Devices and Materials,(2014).
  • 12. GHz response of metamorphic InAlAs metal-semiconductor-metal photodetector on GaAs substrate,K. Maekita, T. Maruyama, K. Iiyama, and T. Suzuki,Jpn. J. Appl. Phys.,53,02BC16,(2014)
  • 13. Low-frequency noise in AlN/AlGaN/GaN metal-insulator-semiconductor devices: a comparison with Schottky devices,S. P. Le, T. Q. Nguyen, H.-A. Shih, M. Kudo, and T. Suzuki,J. Appl. Phys.,116,054510,(2014).
  • 14. AlGaN-GaN metal-insulator-semiconductor high-electron-mobility transistors with very high-k oxynitride TaOxNy gate dielectric,T. Sato, J. Okayasu, M. Takikawa, and T. Suzuki,IEEE Electron Device Letters,34,375,(2013).
  • 15. Application of AlTiO thin films to AlTiO/AlGaN/GaN metal-insulator-semiconductor heterojunction field-effect transistors,T. Q. Nguyen, T. Ui, M. Kudo,H.-A. Shih, T. Suzuki,45th Int. Conf. on Solid State Devices and Materials,J-2-2,(2013).
  • 16. Fabrication and characterization of BN/AlGaN/GaN metal-insulator-semiconductor heterojunction field-effect transistors with sputtering-deposited BN gate dielectric,T. Q. Nguyen, H.-A. Shih, M. Kudo, and T. Suzuki,Phys. Status Solidi C,(2013).
  • 17. Current conduction mechanisms and breakdown fields of AlxTiyO/n-GaAs(001) metal-insulator-semiconductor structures,T. Ui, M. Kudo, and T. Suzuki,Phys. Status Solidi C,(2013).
  • 18. Analysis of AlN/AlGaN/GaN metal-insulator-semiconductor structure by using capacitance-frequency-temperature mapping,H.-A. Shih, M. Kudo, and T. Suzuki,Appl. Phys. Lett.,101,043501,(2012).
  • 19. Carrier recombination lifetime in InAs thin films bonded on low-k flexible substrates,T. Suzuki, H. Takita, C. T. Nguyen, and K. Iiyama,AIP Advances,2,042105,(2012).
  • 20. Interface analysis of AlN/InAs(001) and AlN/Ge/InAs(001) by angle-resolved X-ray photoelectron spectroscopy,M. Kudo, H.-A. Shih, and T. Suzuki,44th International Conference on Solid State Devices and Materials,PS-6-18,(2012).

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