北陸先端科学技術大学院大学 [JAIST] - 研究者総覧
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下田 達也 (シモダ タツヤ) 教授
シングルナノイノベーティブデバイス研究拠点(マテリアルサイエンス専攻・物性解析・デバイス領域)

87件中1-20件目

  • 1. High-performance oxide thin film transistor fully fabricated by a direct rheology imprinting,Phan Trong Tue, Kazuhiro Fukada, and Tatsuya Shimoda,Applied Physics Letters,111,223504,2017/11/30
  • 2. Incorporation of silicon into monodispersed starburst carbon spheres with LVD method,
    K. Yano, N. Tatsuda, T. Masuda, T. Shimoda,
    Microporous and Mesoporous Materials,247,46-51,2017
  • 3. Evaporation of an inkjet droplet on a flat substrate,
    T. Masuda and T. Shimoda,
    Japnese Journal of Applied Physics,56,016701,2017
  • 4. SiCインクの合成と塗布法による半導体用アモルファスSiC薄膜,
    下田達也, 増田貴史
    セラミックス,51,8,500,2016
  • 5. Direct imprinting of liquid silicon,
    T. Masuda, H. Takagishi, K. Yamazaki, T. Shimoda,
    ACS Applied Materials & Interfaces,8,9969,2016
  • 6. Photoelectron yield spectroscopy and inverse photoemission spectroscopy evaluations of p-type amorphous silicon carbide films prepared using liquid materials,
    T. Murakami, T. Masuda, S. Inoue, H. Yano, N. Iwamuro, T. Shimoda,
    AIP Advances,6,055021,2016
  • 7. Preparation and characterization of polymer-derived amorphous silicon carbide with silicon-rich stoichiometry,
    T. Masuda, A. Iwasaka, H. Takagishi, T. Shimoda,
    Thin Solid Films,612,284,2016
  • 8. Novel Method to Incorporate Si into Monodispersed Mesoporous Carbon Spheres,
    K. Yano, N. Tatsuda, T. Masuda, T. Shimoda,
    Journal of Colloid and Interface Science,479,20,2016
  • 9. Well-defined silicon patterns by imprinting of liquid silicon,
    R. Kawajiri, H. Takagishi, T. Masuda, T. Kaneda, K. Yamazaki, Y. Matsuki, T. Mitani, T, Shimoda,
    Journal of Materials Chemistry C,4,3385,2016
  • 10. Formation of amorphous silicon passivation films with high stability against post-annealing, air exposure and light soaking using liquid silicon,
    C. Guo, K. Ohdaira, H. Takagishi, T. Masuda, Z. Shen, T. Shimoda,
    Japanese Journal of Applied Physics,55,04ES12,2016
  • 11. Silicon deposition in nanopores using a liquid precursor,
    T. Masuda, N. Tatsuda, K. Yano, T. Shimoda,
    Scientific Reports,6,37689,2016
  • 12. Fabrication of Source and Drain Regions of Self-Aligned Thin-Film Transistor Using a Solution of Tin and Polypropylene Carbonate,Huynh Thi Cam Tu, Satoshi Inoue, Kiyoshi Nishioka, Nobutaka Fujimoto, Shuichi Karashima, Tatsuya Shimoda,Japanese Journal of Applied Physics, to be published
  • 13. Polymeric precursor for solution-processed amorphous silicon carbide,
    T. Masuda, A. Iwasaka, H. Takagishi, T. Shimoda,
    Journal of Materials Chemistry C,3,12212,2015
  • 14. Fabrication of high-quality amorphous silicon film from cyclopentasilane by vapor deposition between two parallel substrates,
    Z. Shen, T. Masuda, H. Takagishi, K. Ohdaira, and T. Shimoda,
    Chemical Communications,51,4417,2015
  • 15. Phosphorus- and boron-doped hydrogenated amorphous silicon filmsprepared using vaporized liquid cyclopentasilane,
    T. Masuda, H. Takagishi, Z. Shen, K. Ohdaira, and T. Shimoda,
    Thin Solid Films,589,221,2015
  • 16. Electrophoretic displays driven by all-oxide thin-film transistor backplanes fabricated using a solution process,Satoshi Inoue, Phan Trong Tue, Tomoko Hori, Hiroaki Koyama, and Tatsuya Shimoda,Physica Status Solidi A, to be published.
  • 17. High Relative Dielectric Constant Bismuth-Niobium-Oxide Films Prepared Using Nb-rich Precursor Solution, Tomoki Ariga, Satoshi Inoue, Shin Matsumoto, Masatoshi Onoue, Takaaki Miyasako, Eisuke Tokumitsu, and Tatsuya Shimoda, Japanese Journal of Applied Physics, to be published.
  • 18. Investigation of Roll-to-Sheet Imprinting for the Fabrication of Thin-film Transistor Electrodes,H. Koyama, K. Fukada, Y. Murakami, S. Inoue and Tatsuya Shimoda,IEICE Trans. Electron,E-97C, 1042,2014
  • 19. Highly conductive ruthenium oxide thin films by a low-temperature solution process and greenlaser annealing,Y. Murakami, J.Li and T.Shimoda,Materials Letters 121-124,152,2015,15/03/26
  • 20. Solution processing of highly conductive ruthenium and ruthenium oxide thin films from。。rutheniumィCamine complexes,Y. Murakami, J. Li, D. Hirose, S. Kohara and。。T. Shimoda,,J. Mater. Chem. C, 2015, 3, 4490ィC4499,2015/04

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