水田　博 （ミズタ　ヒロシ）　教授
マテリアルサイエンス研究科（マテリアルサイエンス専攻・物性解析・デバイス領域）

25件中1-20件目

• 1.　Nanofabrication with the Helium Ion Microscope，S. A. Boden, Z. Moktadir, F. M. Alkhalil, H. Mizuta, H. N. Rutt and D. M. Bagnall，Proc. MRS，1412，mrsf11-1412-ff08-08，2012
• 2.　Fabrication and ab initio study of downscaled graphene nanoelectronic devices (Invited Paper)，H. Mizuta, Z. Moktadir, S. A. Boden, N. Kalhor, S. Hang, M. E. Schmidt, N. T. Cuong, D. H. Chi, N. Otsuka, M. Muruagnathan, Y. Tsuchiya, H. Chong, H. N. Rutt and D. M. Bagnall，Proc. SPIE，8462， 846206，2012
• 3.　High on/off ratio and multimode transport in silicon nanochains single electron transistors，M. A. Rafiq, K. Masubuchi, Z. A. K. Durrani, A. Colli, H. Mizuta, W. I. Milne, and S. Oda，Appl. Phys. Lett.，100，113108，2012
• 4.　Conduction bottleneck in silicon nanochain single electron transistors operating at room temperature，M. A. Rafiq, K. Masubuchi, Z. A. K. Durrani, A. Colli, H. Mizuta, W. I. Milne, and S. Oda，Jpn. J. Appl. Phys.，51，025202，2012
• 5.　Focused Ion Beam Milling and Deposition of Tungsten Contacts on Exfoliated Graphene for Electronic Device Applications，M. E. Schmidt, Z. Johari, R. Ismail, H. Mizuta and H.M.H. Chong，Microelectronic Engineering，98，313, 4 pages，2012
• 6.　Design and fabrication of densely integrated silicon quantum dots using a VLSI compatible Hydrogen silsequioxane electron beam lithography，Y. P. Lin, M. K. Husain, F. M. Alkhalil, N. Lambert, J. Perez-Barraza, A. J. Ferguson, H. M. H. Chong, Y. Tsuchiya and H. Mizuta，Microelectronic Engineering，98，386, 5 pages，2012
• 7.　Strain effects on avalanche multiplication in a silicon nanodot array，N. Mori, H. Minari, S. Uno, H. Mizuta and N. Koshida，Jpn. J. Appl. Phys.，51，04DJ01，2012
• 8.　Experimental observation of enhanced electron-phonon interaction in suspended Si double quantum dots，J. Ogi, T. Ferrus, T. Kodera, Y. Tsuchiya, K. Uchida, D. A. Williams, S. Oda, and H. Mizuta,，Jpn. J. Appl. Phys.，49，045203，2010
• 9.　Helium ion beam milling and deposition，S. Boden, Z. Moktadir, D.M. Bagnall, H. Mizuta and H. Rutt，Microelectronics Engineering 88，pp. 2452-2455，2011
• 10.　Growth of Ge-Si nanowire heterostructures via chemical vapour deposition，C. B. Li, K. Usami, H. Mizuta and S. Oda，Thin Solid Films，in press，2011
• 11.　Towards nanoscale resonant gas sensor，C. Cobianu, B. Serban, V. Petrescu, J. Pettine, D. Karabacak, P. Offerman, S. Brongesma, V. Cherman, S. Armini, F.A. Hassani, M.A. Ghiass, Y. Tsuchiya, H. Mizuta, C. Dupre, L. Duraffourg, A. Koumela, D. Mercier, E. Ollier, D. Tsamados and A. Ionescu，Annals of the Academy of Romanian Scientists Series of Science and Technology of Information，3，39，2010
• 12.　Hybrid Numerical Analysis of a high-speed and non-volatile suspended gate silicon nanodot memory，M. A. G.-Ramirez, Y. Tsuchiya and H. Mizuta，J. Computational Electronics，10，1，248，2011
• 13.　Numerical analysis of zeptogram/Hz-level mass responsivity for in-plane resonant nano-electro-mechanical sensors，F. A. Hassani, C. Cobianu, S. Armini, V. Petrescu, P. Merken, D. Tsamados, A. M. Ionescu, Y. Tsuchiya and H. Mizuta，Microelectronic Engineering 88，2879-2884，9，2011
• 14.　A U-shaped bilayer graphene channel transistor with a very high Ion/Ioff ratio，Z. Moktadir, S.A. Boden, A. Ghiass, H. Rutt and H. Mizuta，Electron. Lett.，47，3，199，2011
• 15.　Vertical-coupled SiGe double quantum dots，C. B. Li, G. Yamahata, J. S. Xia, H. Mizuta, S. Oda and Y. Shiraki，Electron. Lett.，46，940，2010
• 16.　Design of New Logic Architectures Utilizing Suspended-gate Single-Electron Transistors，B. Pruvost, K. Uchida, H. Mizuta, and S. Oda，IEEE Trans. Nanotechnology，9，504，2010
• 17.　Hybrid circuit analysis of a suspended-gate silicon nanodot memory (SGSNM) cell，M. A. G.-Ramirez, Y. Tsuchiya and H. Mizuta，Microelectronic Engineering，87，1284，2010
• 18.　Suspended quantum dot fabrication on a heavily-doped silicon nanowire by suppressing unintentional quantum dot formation，J. Ogi, M. Ghiass, Y. Tsuchiya, K. Uchida, S. Oda and H. Mizuta，Jpn. J. Appl. Phys.，49，044001，2010
• 19.　Scaling Analysis of Nanoelectromechanical Memory Devices，T. Nagami, Y. Tsuchiya, K. Uchida, H. Mizuta and S. Oda，Jpn. J. Appl. Phys.，49，044304，2010
• 20.　Tailoring the thermal Casimir force with graphene，V. Svetovoy, Z. Moktadir, M. Elwenspoek and H. Mizuta，Euro Phys. Lett. 96, 14006

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