北陸先端科学技術大学院大学 [JAIST] - 研究者総覧
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徳光 永輔 (トクミツ エイスケ) 教授
マテリアルサイエンス研究科

81件中1-20件目

  • 1. Fabrication of MoS2 thin films on oxide-dielectric-covered substrates,Joonam Kim and Eisuke Tokumitsu,Compound Semiconductor Week, June 26-30, 2016 Toyama International Conference Center, Toyama paper MoP-ISCS-121
  • 2. 強誘電体の特異物性と強誘電体ゲートデバイスの展望,徳光 永輔,電子情報通信学会2017年総合大会、エレクトロニクスソサイエティープレナリーセッション(CK-1) 2017年3月22〜25日、名城大学 天白キャンパス(名古屋市)
  • 3. Direct Imprinting of Oxide Precursor Gel for New Fabrication Process of Thin Film Transistors,Ken-ichi Haga, Yuusuke Kamiya, Eisuke Tokumitsu,The 6th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2017), June 18-321, 2017, Fukui, paper PO3-47
  • 4. 溶液プロセスによるMoS2の作製と薄膜トランジスタ応用に関する研究,金 胄男, 羽賀 健一, 徳光 永輔,第64回応用物理学会春季学術講演会、16a-F203-10、パシフィコ横浜、2017年3月14日〜17日
  • 5. Investigation of Nb-Zr-O thin film using sol-gel coating,J. Kim, K. Haga, E. Tokumitsu,82016 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2016), paper B3-3(oral) July 4 - 6, 2016Hakodate Kokusai Hotel, Hakodate, Japan
  • 6. Chemical Solution Process of In-Based Oxides and MoS2 for Thin Film Transistors,Eisuke Tokumitsu,The 6th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2017), June 18-321, 2017, Fukui, paper PA2-1-1
  • 7. Coating properties of chemical solution processed MoS2 thin films on various oxides,Joonam Kim, Ken-ichi Haga, Eisuke Tokumitsu,2017 European Materials Research Society (E-MRS) Spring Meeting, Strasbourg, France, May 22-26, 2017. paper Q.PM.4
  • 8. Chemical solution processed MoS2 on high-k oxide film,Joonam Kim, Kenichi Haga, Koichi Higashimine, Eisuke Tokumitsu,77回応用物理学会秋季学術講演会、13p-A37-2、朱鷺メッセ、2016-9.13-16, 2016.
  • 9. Memory Cell Array using Indium-Tin-Oxide Channel Ferroelectric-Gate Thin Film Transistors,Eisuke Tokumitsu,16th Non-Volatile Memory Technology Symposium (NVMTS 2016) , Oct. 17 ィC19, 2016, Pittsburgh, Pennsylvania, USAユミ
  • 10. “Ferroelectric-gate Thin Film Transistors with Oxide Channel for Nonvolatile Memory Applications”,Eisuke Tokumitsu, ,2nd Anuunal World Congress of Smart Materials (WCSM2016), March 4-6, 2016, Singapore.
  • 11. Characterization of solution processed thin film MoS2 on oxide dielectric,JooNam Kim, Eisuke Tokumitsu,5th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2015), June 16-19, 2015, Niigata, Japan.
  • 12. Crystallization Mechanism and Crystallographic Orientation Control of (Bi,La)4Ti3O12 (BLT) Films by Sol-gel technique,Eisuke Tokumitsu and Ken-ichi Haga,13th European Meeting on Ferroelectricity (EMF 2015), Porto, June 28-July 3, 2015 oral
  • 13. Ferroelectric-gate Thin Film Transistors with Oxide Channel for Nonvolatile Memory Applications,Eisuke Tokumitsu,BIT’s 2nd Annual World Congress of Smart Materials-2016, March 4-6, 2016, Singapore
  • 14. Crystallization Mechanism and Crystallographic Orientation Control of (Bi,La)4Ti3O12 (BLT) Films by Sol-gel technique,Eisuke Tokumitsu and Ken-ichi Haga,13th European Meeting on Ferroelectricity (EMF 2015), Porto, June 28-July 3, 2015 oral
  • 15. Simultaneous formation of channel and source/drain regions by nano-rheology printing in ITO-based thin film transistors,T. Kaneda, E. Tokumitsu, T. Miyasako, T. Shimoda,EMRS Spring Meeting, Lille, May 11-15, 2015
  • 16. Oxide-Channel Ferroelectric-Gate Thin Film Transistors Prepared by Solution Process,Eisuke Tokumitsu and Tatsuya Shimoda,22nd International Display Workshop (IDW 2015), Dec.9-11, Otsu, Japan, Paper AMD6-1.
  • 17. Characterization of sol-gel derived Nb doped ZrO2 thin film,JooNam Kim, Eisuke Tokumitsu,第63回応用物理学会春季学術講演会、2016年3月19日〜22日、東京 19p-P3-3
  • 18. Novel Materials and Processing for Printed Metal Oxide Devices,Jinwang Li, Phan Trong Tue, Yoshitaka Murakami, Tadaoki, Mitani, Eisuke Tokumitsu and Tatsuya Shimoda,,EMRS 2014 Spring Meeting, Symposium I.P1.28(Invited) , Lille, France, May 26th - 30th 2014.,Lille, France,May 26th - 30th 2014
  • 19. 酸化物チャネル強誘電体ゲート薄膜トランジスタのソース・ドレイン構造とスイッチング特性,羽賀 健一, 中田 祐貴, Dan Ricinschi, 徳光 永輔,第31回強誘電体応用会議 (FMA31),コープイン京都,2014/05/28-31
  • 20. Amorphous LaRuO Nano-patterningusing Rheology Printing Method,Koji Nagahara, Li Jinwang, Daisuke Hirose, Eisuke Tokumitsu ,and Tatsuya Shimoda,13th International Conference on Nanoimprint and Nanoprint Technology (NNT 2014) ,October 22-24, 2014, ANA Crowne Plaza Kyoto, Kyoto, Japan.,Kyoto, Japan,October 22-24, 2014

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