北陸先端科学技術大学院大学 [JAIST] - 研究者総覧
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徳光 永輔 (トクミツ エイスケ) 教授
マテリアルサイエンス系、応用物理学領域

42件中1-20件目

  • 1. Investigation of Nb-Zr-O thin film using sol-gel coating,Joonam Kim, Ken-ichi Haga, and Eisuke Tokumitsu,Journal of Semiconductor Technology and Science , 245,Vol. 17,No. 2,2017/04/
  • 2. Fabrication of MoS2 thin films on oxide-dielectric-covered substrates by chemical solution process,Joonam Kim, Koichi Higashimine, Ken-ichi Haga, and Eisuke Tokumitsu,Physica Status Solidi (b) Vol. 254 No. 2, 1600536 (2017),254,2,1600536,2017/02/16
  • 3. High Relative Dielectric Constant Bismuth-Niobium-Oxide Films Prepared Using Nb-rich Precursor Solution, Tomoki Ariga, Satoshi Inoue, Shin Matsumoto, Masatoshi Onoue, Takaaki Miyasako, Eisuke Tokumitsu, and Tatsuya Shimoda, Japanese Journal of Applied Physics, to be published.
  • 4. Crystallization Mechanism and Crystallographic Orientation Control of (Bi,La)4Ti3O12 (BLT) Films by Sol-gel technique,Eisuke Tokumitsu and Ken-ichi Haga,13th European Meeting on Ferroelectricity (EMF 2015), Porto, June 28-July 3, 2015 oral
  • 5. A Study on Graphitization of 4H-SiC(0001) Surface under Low Pressure Oxygen Atmosphere and Effects of Pre-oxidation treatment,Yuichi Nagahisa, Yoshishige Tsuchiya and Eisuke Tokumitsu,,Materials Science Forum,821-823,pp 949-952,2015
  • 6. Observation of high dielectric constant of Bi-Nb-Ox thin-film capacitors fabricated by chemical solution deposition process,Masatoshi Onoue, Takaaki Miyasako, Eisuke Tokumitsu, Tatsuya Shimoda,IEICE Electronics Express, (2014),Vol. 11,No. 16,pp. 20140651,2014/08/25
  • 7. Correlated motion dynamics of electron channels and domain walls in a ferroelectric-gate thin-film transistor consisting of a ZnO/Pb(Zr,Ti)O3 stacked structure,Yukihiro Kaneko, Yu Nishitani, Hiroyuki Tanaka, Michihito Ueda, Yoshihisa Kato, Eisuke Tokumitsu, and Eiji Fujii,,Journal of Applied Physics,110,8,,084106-1〜7,2011
  • 8. A 60 nm channel length ferroelectric-gate field-effect transistor capable of fast switching and multilevel programming,Yukihiro Kaneko, Yu Nishitani, Michihito Ueda, Eisuke Tokumitsu, and Eiji Fujii,Applied Physics Letters,99,182902-1〜3,2011
  • 9. Evaluation of Channel Modulation in In2O3/(Bi,La)4Ti3O12 Ferroelectric-Gate Thin Film Transistors by Capacitance-Voltage Measurements,Eisuke Tokumitsu & Kazuya Kikuchi,Ferroelectrics,429,15-21,305-311,2012
  • 10. Electric Properties and Interface Charge Trap Density of Ferroelectric Gate Thin Film Transistor Using (Bi,La)4Ti3O12/Pb(Zr,Ti)O3 Stacked Gate Insulator,Pham Van Thanh, Bui Nguyen Quoc Trinh, Takaaki Miyasako, Phan Trong Tue, Eisuke Tokumitsu, and Tatsuya Shimoda,,Jpn. J. Appl. Phys,51,09LA09-1-5,2012
  • 11. Highly conductive p-type amorphous oxides from low-temperature solution processing,Jinwang Li, Eisuke Tokumitsu, Mikio Koyano, Tadaoki Mitani, and Tatsuya Shimoda,,Appl. Phys. Lett,101,132104-1-4,2012
  • 12. Surface-modified lead-zirconium-titanate system for solution-processed ferroelectric-gate thin-film transistors,Phan Trong Tue, Takaaki Miyasako, Koichi Higashimine, Eisuke Tokumitsu and Tatsuya Shimoda,,Applied Physisces A,113,2,333-338,2014
  • 13. Unipolar behavior in grapheme-channel field-effect-transistors with n-type doped SiC source/drain regions,Yuichi Nagahisa, Yuichi Harada, and Eisuke Tokumitsu,,Appl. Phys. Lett,103,22,.223503-1
  • 14. Kelvin probe force microscopy study on operating In-Sn-O-channel ferroelectric-gate thin-film transistors,P.T. Tue, T. Miyasako, E. Tokumitsu, T. Shimoda,,J. Appl. Phys,115,10,.104501-6,2014
  • 15. Rheology printing for metal-oxide patterns and devices,Toshihiko Kaneda, Daisuke Hirose, Takaaki Miyasako, PhanTrong Tue, Yoshitaka Murakami, Shinji Kohara, Jinwang Li, Tadaoki Mitani, Eisuke Tokumitsu and Tatsuya Shimoda,,Journal of Materials Chemistry C,2,1,40-49,2014
  • 16. Observation of high dielectric constant of Bi-Nb-Ox thin-film capacitors fabricated by chemical solution deposition process,Masatoshi Onoue, Takaaki Miyasako, Eisuke Tokumitsu and Tatsuya Shimoda,IEICE Electronics Express,11,16,1-10,2014
  • 17. Investigation of solution-processed bismuth-niobium-oxide films,Satoshi Inoue,Tomoki Ariga, Shin Matsumoto, Masatoshi Onoue, Takaaki Miyasako, Eisuke Tokumitsu, Norimichi Chinone, Yasuo Cho, and Tatsuya Shimoda,J. Appl. Phys,116,2014,154103,October 2014/10/17
  • 18. Fabrication of 120-nm-channel-length ferroelectric-gate thin-film transistor by nanoimprint lithography,Koji Nagahara, Bui Nguyen Quoc Trinh, Eisuke Tokumitsu, Satoshi Inoue, and Tatsuya Shimoda,Japanese Journal of Applied Physics,53,2014,02BC14,2014/1/29
  • 19. Fabrication and characterization of ferroelectric-gate thin-film transistors with an amorphous oxide semiconductor, amorphous In-Ga-Zn-O,Ken-ichi Haga and Eisuke Tokumitsu,Japanese Journal of Applied Physics,53,11,111103,2014/10/27
  • 20. Relationship between source/drain-contact structures and switching characteristics in oxide-channel ferroelectric-gate thin-film transistors,Ken-ichi Haga, Yuuki Nakada, Dan Ricinschi, and Eisuke Tokumitsu,Japanease Journal of Applied Physics,53,9S,09PA07-1,2014/09/03

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