北陸先端科学技術大学院大学 [JAIST] - 研究者総覧
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徳光 永輔 (トクミツ エイスケ) 教授
マテリアルサイエンス系、応用物理学領域

81件中1-20件目

  • 1. Fabrication of MoS2 thin films on oxide-dielectric-covered substrates,Joonam Kim and Eisuke Tokumitsu,Compound Semiconductor Week, June 26-30, 2016 Toyama International Conference Center, Toyama paper MoP-ISCS-121
  • 2. 強誘電体の特異物性と強誘電体ゲートデバイスの展望,徳光 永輔,電子情報通信学会2017年総合大会、エレクトロニクスソサイエティープレナリーセッション(CK-1) 2017年3月22〜25日、名城大学 天白キャンパス(名古屋市)
  • 3. Direct Imprinting of Oxide Precursor Gel for New Fabrication Process of Thin Film Transistors,Ken-ichi Haga, Yuusuke Kamiya, Eisuke Tokumitsu,The 6th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2017), June 18-321, 2017, Fukui, paper PO3-47
  • 4. 溶液プロセスによるMoS2の作製と薄膜トランジスタ応用に関する研究,金 胄男, 羽賀 健一, 徳光 永輔,第64回応用物理学会春季学術講演会、16a-F203-10、パシフィコ横浜、2017年3月14日〜17日
  • 5. Investigation of Nb-Zr-O thin film using sol-gel coating,J. Kim, K. Haga, E. Tokumitsu,82016 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2016), paper B3-3(oral) July 4 - 6, 2016Hakodate Kokusai Hotel, Hakodate, Japan
  • 6. Chemical Solution Process of In-Based Oxides and MoS2 for Thin Film Transistors,Eisuke Tokumitsu,The 6th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2017), June 18-321, 2017, Fukui, paper PA2-1-1
  • 7. Coating properties of chemical solution processed MoS2 thin films on various oxides,Joonam Kim, Ken-ichi Haga, Eisuke Tokumitsu,2017 European Materials Research Society (E-MRS) Spring Meeting, Strasbourg, France, May 22-26, 2017. paper Q.PM.4
  • 8. Chemical solution processed MoS2 on high-k oxide film,Joonam Kim, Kenichi Haga, Koichi Higashimine, Eisuke Tokumitsu,77回応用物理学会秋季学術講演会、13p-A37-2、朱鷺メッセ、2016-9.13-16, 2016.
  • 9. Memory Cell Array using Indium-Tin-Oxide Channel Ferroelectric-Gate Thin Film Transistors,Eisuke Tokumitsu,16th Non-Volatile Memory Technology Symposium (NVMTS 2016) , Oct. 17 ィC19, 2016, Pittsburgh, Pennsylvania, USAユミ
  • 10. “Ferroelectric-gate Thin Film Transistors with Oxide Channel for Nonvolatile Memory Applications”,Eisuke Tokumitsu, ,2nd Anuunal World Congress of Smart Materials (WCSM2016), March 4-6, 2016, Singapore.
  • 11. Characterization of solution processed thin film MoS2 on oxide dielectric,JooNam Kim, Eisuke Tokumitsu,5th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2015), June 16-19, 2015, Niigata, Japan.
  • 12. Crystallization Mechanism and Crystallographic Orientation Control of (Bi,La)4Ti3O12 (BLT) Films by Sol-gel technique,Eisuke Tokumitsu and Ken-ichi Haga,13th European Meeting on Ferroelectricity (EMF 2015), Porto, June 28-July 3, 2015 oral
  • 13. Ferroelectric-gate Thin Film Transistors with Oxide Channel for Nonvolatile Memory Applications,Eisuke Tokumitsu,BIT’s 2nd Annual World Congress of Smart Materials-2016, March 4-6, 2016, Singapore
  • 14. Crystallization Mechanism and Crystallographic Orientation Control of (Bi,La)4Ti3O12 (BLT) Films by Sol-gel technique,Eisuke Tokumitsu and Ken-ichi Haga,13th European Meeting on Ferroelectricity (EMF 2015), Porto, June 28-July 3, 2015 oral
  • 15. Simultaneous formation of channel and source/drain regions by nano-rheology printing in ITO-based thin film transistors,T. Kaneda, E. Tokumitsu, T. Miyasako, T. Shimoda,EMRS Spring Meeting, Lille, May 11-15, 2015
  • 16. Oxide-Channel Ferroelectric-Gate Thin Film Transistors Prepared by Solution Process,Eisuke Tokumitsu and Tatsuya Shimoda,22nd International Display Workshop (IDW 2015), Dec.9-11, Otsu, Japan, Paper AMD6-1.
  • 17. Characterization of sol-gel derived Nb doped ZrO2 thin film,JooNam Kim, Eisuke Tokumitsu,第63回応用物理学会春季学術講演会、2016年3月19日〜22日、東京 19p-P3-3
  • 18. Nano-Rheology Printing (nRP): A Direct Printing Technique for Well-Defined Metal Oxide Patterns and Devices,Tatsuya Shimoda, Toshihiko Kaneda, Daisuke Hirose, Takaaki, Miyasako, Phan Trong Tue, Yoshitaka Murakami, Shinji Kohara,Jinwang Li, Tadaoki Mitani, Eisuke Tokumitsu and Shogo Nobukawa,EMRS 2014 Spring Meeting, Symposium I.11.2, Lille, France, May 26th - 30th 2014.,Lille, France,May 26th - 30th 2014
  • 19. 酸化物チャネル強誘電体ゲート薄膜トランジスタのソース・ドレイン構造とスイッチング特性,羽賀 健一, 中田 祐貴, Dan Ricinschi, 徳光 永輔,第31回強誘電体応用会議 (FMA31),コープイン京都,2014/05/28-31
  • 20. Amorphous LaRuO Nano-patterningusing Rheology Printing Method,Koji Nagahara, Li Jinwang, Daisuke Hirose, Eisuke Tokumitsu ,and Tatsuya Shimoda,13th International Conference on Nanoimprint and Nanoprint Technology (NNT 2014) ,October 22-24, 2014, ANA Crowne Plaza Kyoto, Kyoto, Japan.,Kyoto, Japan,October 22-24, 2014

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