MURUGANATHAN, Manoharan （ムルガナタン　マノハラン）　助教
マテリアルサイエンス研究科（マテリアルサイエンス専攻・物性解析・デバイス領域）

7件中1-7件目

• 1.　Transport characteristics of nanoconstricted graphene with and with out point defects，Deepak S., Hiroshi Mizuta, Manoharan M.，IEEE Explore Nanoscience, Engineering and Technology (ICONSET), 2011 DOI: 10.1109/ICONSET.2011.6167968，300-303，2012/03/12
• 2.　Fabrication and study of downscaled graphene nanoelectronic devices，Hiroshi Mizuta ; Manoharan Muruganathan et al.,，Proc. SPIE，8462，846206，2012/09/27
• 3.　Impact of key circuit parameters on signal-to-noise ratio characteristics for the radio-frequency single electron transistors，M. Manoharan, Benjamin Pruvost, Hiroshi Mizuta, and Shunri Oda，IEEE Transactions on Nanotechnology，7，266，2008
• 4.　Strongly coupled multiple-dot characteristics in dual recess structured silicon channel，M. Manoharan, Yoshiyuki Kawata, Yoshishige Tsuchiya, Shunri Oda, and Hiroshi Mizuta，Journal of Applied Physics，103，043719，2008
• 5.　Stochastic Coulomb blockade in coupled asymmetric silicon dots formed by pattern-dependent oxidatio，M. Manoharan, Yoshishige Tsuchiya, Shunri Oda, and Hiroshi Mizuta，Applied Physics Letters，92， 092110，2008 (This paper was also selected by the Virtual Journal of Nanoscale Science andTechnology)
• 6.　Silicon-on-Insulator-Based Radio Frequency Single-ElectronTransistors Operating at Temperatures above 4.2 K，M. Manoharan, Yoshishige Tsuchiya, Shunri Oda, and Hiroshi Mizuta，Nano Lett，8　(12)，4648，2008
• 7.　Impact of channelconstrictions on the formation of multiple tunnel junctions in heavily-doped silicon SETs，M. Manoharan, Shunri Oda, and Hiroshi Mizuta，Applied Physics Letters，93，112107，2008