北陸先端科学技術大学院大学 [JAIST] - 研究者総覧
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松村 英樹 (マツムラ ヒデキ) 特任教授
ナノマテリアルテクノロジーセンター

373件中1-20件目

  • 1. 触媒化学気相堆積(Cat-CVD)法による太陽電池用高品質パッシベーション膜の形成,大平 圭介、Trinh Cham Thi、及川貴史、瀬戸純一、小山晃一、松村英樹,表面科学,38,pp. 234-239,2017
  • 2. Super water-repellent treatment of various cloths by deposition of Cat-CVD PTFE films,H. Matsumura, M. Mishiro, M. Takachi, and K. Ohdaira,J. Vac. Sci. Technol. A (in press)
  • 3. Passivation of textured crystalline silicon surfaces by Cat-CVD silicon nitride films and catalytic phosphorus doping,K. Ohdaira, Trinh Thi Cham, and H. Matsumura,Jpn. J. Appl. Phys.,56,102301-1-4,2017
  • 4. Novel chemical cleaning of textured crystalline silicon for realizing surface recombination velocity <0.2 cm/s using passivation Cat-CVD SiNx/a-Si stacked layers,C. T. Nguyen, K. Koyama, S. Terashima, C. Okamoto, S. Sugiyama, K. Ohdaira, and H. Matsumura,Jpn. J. Appl. Phys. (in press)
  • 5. Catalytic phosphorus and boron doping to amorphous silicon films,K. Ohdaira, J. Seto, and H. Matsumura,Jpn. J. Appl. Phys.,56,08MB06-1-5,2017
  • 6. Simple fabrication of back contact hetero-junction solar cells by plasma ion-implantation,K. Koyama, N. Yamaguchi, D. Hironiwa, H. Suzuki, K. Ohdaira, H. Matsumura,Jpn. J. Appl. Phys. (in press)
  • 7. Entrance of low cost fabrication of back-contact hetero-junction solar cells by using plasma ion-implantation,K. Koyama, K. Ohdaira, and H. Matsumura,Proc. 44th IEEE Photovoltaic Specialists Conference,2017
  • 8. Suppression of the epitaxial growth of Si films in Si heterojunction solar cells by the formation of ultra-thin oxide layers,K. Ohdaira, T. Oikawa, K. Higashimine, and H. Matsumura,Current Appl. Phys.,16,1026-1029,2016
  • 9. Defect Termination on c-Si Surfaces by Hydrogen for Improvement in the Passivation Quality of Cat-CVD SiNx and SiNx/P Cat-Doped Layers,Trinh Cham Thi, K. Koyama, K. Ohdaira, H. Matsumura,Jpn. J. Appl. Phys.,55,02BF09,2016
  • 10. Catalytic doping of phosphorus and boron atoms onto hydrogenated amorphous silicon films,J. Seto, K. Ohdaira, and H. Matsumura,Jpn. J. Appl. Phys.,55,04ES05,2016
  • 11. Cat-CVD Passivation Realizing Extremely Low Surface Recombination Velocity < 0.2 cm/s in Solar Cell Structure,Cong T. Nguyen, Koichi Koyama, Shigeki Terashima, Chikao Okamoto, Shuichiro Sugiyama, Keisuke Ohdaira, and Hideki Matsumura,Proc. 43rd IEEE Photovoltaic Specialists Conference,2016
  • 12. Application of crystalline silicon surface oxidation to silicon heterojunction solar cells,T. Oikawa, K. Ohdaira, K. Higashimine, and H. Matsumura,Current Appl. Phys,15,1168-1172,2015
  • 13. Catalytic Doping of Phosphorus and Boron Atoms onto Hydrogenated Amorphous Silicon Films,J. Seto, K.Ohdaira, H. Matsumura,Extended Abstract of 2015 International Conference on Solid State Devices and Materials,C-7-5
  • 14. Photo-Carrier Generation at a-Si Layer in SiNx/a-Si Stacked Passivation with Extremely Low Surface Recombination Velocity,Koichi Koyama, Koichi Higashimine, Keisuke Ohdaira and Hideki Matsumura,Proc. 42nd IEEE Photovoltaic Specialists Conference (in press)
  • 15. Improvement in passivation quality and open-circuit voltage in silicon heterojunction solar cells by the catalytic doping of phosphorus atoms,S. Tsuzaki, K. Ohdaira, T. Oikawa, K. Koyama, and H. Matsumura,Jpn. J. Appl. Phys.,54,072301-1-5,2015
  • 16. Effect of hydrogen on passivation quality of SiNx/Si-rich SiNx stacked layers deposited by catalytic chemical vapor deposition on c-Si wafers,Trinh Cham Thi, K. Koyama, K. Ohdaira, and H. Matsumura,Thin Solid Films,575,60-63,2015
  • 17. Low Temperature Boron Doping into Crystalline Silicon by Boron-Containing Species Generated in Cat-CVD Apparatus,T. Ohta, K. Koyama, K. Ohdaira, and H. Matsumura,Thin Solid Films,575,92-95,2015
  • 18. Comparison of Crystalline-Silicon/Amorphous-Silicon Interface Prepared by Plasma Enhanced Chemical Vapor Deposition and Catalytic Chemical Vapor Deposition,H. Matsumura, K. Higashimine, K. Koyama, and K. Ohdaira,J. Vac. Sci. Technol. B (in press),33,031201,2015
  • 19. Drastic reduction in the surface recombination velocity of crystalline silicon passivated with Cat-CVD SiNx films by introducing phosphorous Cat-doped layer,Trinh Cham Thi, K. Koyama, K. Ohdaira, and H. Matsumura,J. Appl. Phys.,116,044510-1-7,2014
  • 20. Requirements for Achieving Extremely Low Surface Recombination Velocity and Negligible Optical Loss in Cat-CVD SiNx/a-Si Stacked Passivation,K. Koyama, Trinh Cham Thi, K. Higashimine, K. Ohdaira, and H. Matsumura,Proc. 39th IEEE Photovoltaic Specialists Conference,3304-3307,2014

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