TOP Page > Search Result > Profile > Display All

Susumu Horita Associate Professor
School of Materials Science（Department of Materials Science・Materials Characterization and Device）

Results 21-40 of about 56

21.　Fabrication of Polycrystalline Ferroelectric Gate FET Memory　with an Intermediate Electrode，B. N. Q. Trinh and S. Horita，15th IEEE International Symposium on the　Applications of Ferroelectrics，Sunset Beach, NC, U.S.A.，2006年8月1日
22.　Low Temperature Formation of Si Oxide Thin Film for TFT byReaction of Organosiliconpolymer and Low Concentration Ozone Gas，K. Nishioka, T. Toriyabe and S. Horita，the International TFT Conference 2007，CNR, Headquarters, Rome, Italy，2007年１月 25, 26日
23.　Effect of Multiple Reflection on Periodic Structure of Si Film Crystallized by Linearly Polarized Nd:YAG Laser，S. Horita, K. Nishioka and H. Kaki，Proc. of the 12th International Display workshops (IDW'05), pp. 1191-1194,，Sunport Takamatsu, Takamatsu, Japan，2005/12/8
24.　Reduction of Random Surface Ridges on an Si Film Crystallized by a Linearly Polarized Nd:YAG Pulse Laser，S.Horita, H. Kaki and K. Nishioka，Digest of Technical Papers, 2005 International Workshop on Active-Matrix Liquid-Crystal Displays(AM-LCD 05), TFTp1-5, pp.179-182.，Kanazawa Bunka Hall, Japan，2005/7/7
25.　Improvement in Read Endurance of Ferroelectric Gate Field-Effect Transistor Memory with an Intermediate Electrode，T. D. Khoa. and S. Horita，Extended Abs.of the 2003 International Conference on Solid State Device and Material, pp.650-651，Tokyo, Japan，2003年9月17日
26.　Fabrication of Poly-Si Thin Film Transistor Using Gate Oxide Layer Formed by Wet Ozone-enriched Oxidation，M.Seki, P.N.Hai, S.Nishio, Y.Nakata and S.Horita， Proc. of the 10th International Display Workshops (IDW'03), pp.447-450，Fukuoka International Congress Center Fukuoka, Japan，2003/12/3
27.　Pulse Number Dependence of Spatial Period of Grain Boundary in Si Thin Film crystallized by linearly Polarized Pulse Laser with High Incident Angle，H.　Kaki, T.　Ootani and S.　Horita， Proc. of the 10th International Display Workshops (IDW'03), pp.455-458，Fukuoka International Congress Center Fukuoka, Japan，2003/12/3
28.　Characteristics of MOS structure formed by the humid gas mixture of O2 + O3 at low temperature，P. N. Hai, M. Seki, S. Nishio, Y. Nakata and S. Horita，Digest of Technical Papers, 2003 International Workshop on Active-Matrix Liquid-Crystal Displays(AM-LCD 2003), TFTp1-2, pp.91-94.，Kogakuin Univ. Tokyo, Japan，2003年7月10日
29.　Influence of electrode material on ferroelectric hysteresis loop of a PZT film deposited by sputtering，S.Horita, H.Kasagawa and M.Syoga，Proc. The 7th International Symp. on Sputtering and Plasma Processes, , AP P-4. pp.491-494.，Kanazawa Institute of Technology in Kanazawa，2003年6月13日
30.　Influence of the shockwave on an Si thin film crystallized by linearly polarized Nd:YAG pulse laser，H.Kaki, T.Ootani, Y.Nakata and S.Horita，Digest of Technical Papers, 2003 International Workshop on Active-Matrix Liquid-Crystal Displays(AM-LCD 2003), TFTp2-5, pp.137-140.，Kogakuin Univ. Tokyo, Japan，2003年7月10日
31.　Formation of Periodic Grain Boundary in an Si Thin Film Crystallized by a Linearly Polarized Nd:YAG Pulse Laser with an Ultra Sonic Oscillator，H. Kaki, T. Ootani and S. Horita，Abs. Material Research Society(MRS) Spring Meeting,(2004),A9.32, PP.34，San Francisco, U. S. A.，2004/4/13
32.　Influence of Crystallisation of a Growing Si Film on a Glass Substrate by Thermal Electron Irradiation，S.Horita, S.Miyoshi and O.Jyaike，POLYSE 2002, Inter. Conf. on Polycrystalline Semiconductors 2002, Book of Abstract, pp.41, Titel No. GP13.，Nara-ken New Public Hall Nara, Japan，2002.9.11
33.　Study on Grain Boundary Formation in an Si Film Crystallized by Laser Induced Periodic Temperature Distribution with a High Incident Angle，H.Kaki, N.Nakata and S.Horita，POLYSE 2002, Inter. Conf. on Polycrystalline Semiconductors 2002, Book of Abstract, pp.29, Titel No. GP1.，Nara-ken New Public Hall Nara, Japan，2002.9.11
34.　Analysis of the Interface between Epitaxial Ir and ZrN Films on Si as a Bottom Electrode for Ferroelectric Capacitor，S.Horita, T.Toda and H.Kasagawa，Abs. The 4th Japan-Korea Conference on Ferroelectrics, P1-40, pp.47.，Osaka Univ., Osaka, Japan，2002.8.21
35.　Influence of the Irradiation conditions on an Si film melting-crystallized by a Nd:YAG pulse laser beam with linear polarization，N.Nakata, H.Kaki, M.Seki and S.Horita，Digest of Technical Papers, 2002 International Workshop on Active-Matrix Liquid-Crystal Displays(AM-LCD 2002), TFTp2-3, pp.141-144.，Kogakuin Univ. Tokyo, Japan，2002.7.11
36.　Material Properties of an Epitaxial PZT Film on an Epitaxial Ir/ZrN/(100) Si Substrate for Ferroelectric Memory，S.Horita, T.Toda and H.Kasagawa，Abs. Inter. Joint Conf. On Applications of Ferroelectrics 2002 (IFFF 2002), No.184, 29H-TP1-2P, pp.127.，Nara-ken New Public Hall Nara, Japan，2002.5.29
37.　Numerical Analysis for Lateral Grain Growth of Poly-Si Thin Films Controlled by Laser-Induced Periodic Thermal Distribution，H.Kaki, N.Nakata and S.Horita，Abs. Material Research Society(MRS) Spring Meeting, A22.5, PP.36.，San Francisco, U.S.A.，2002.4.4
38.　Influence of the Beam Irradiation Condition with Oblique Incidence on Cyrstallization of an Silicon Film by a Linearly Polarized Pulse Laser，N.Nakata, H.Kaki and S.Horita，Abs.Material Research Society(MRS) Spring Meeting, A22.1, PP.35.，San Francisco、U.S.A.，2002.4.4
39.　A New Working Principle of Ferroelectric Gate FET Memory with an Additional Electrode，T.D.Khoa and S.Horita，Proc. 23rd Inter. Conf. on Microelectronics (MIEL 2002), pp.513-516，Nis, Yugoslavia，2002.5.14
40.　Suppression of Oxidation of an epitaxial (100)ZrN Film on Si during the Deposition of the Ir Film，S.Horii, T.Toda, T.D.Khoa and S.Horita，The 6th International Symp. on Sputtering and Plasma Processes，2001.6.15

[ ≪ Back ] 1 2 3 [ Next ≫ ]

Susumu Horita Associate Professor School of Materials Science（Department of Materials Science・Materials Characterization and Device）

Susumu Horita Associate Professor
School of Materials Science（Department of Materials Science・Materials Characterization and Device）