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Masashi Akabori Associate Professor
School of Materials Science、Applied Physics Area

Results 21-40 of about 56

  • 21. Anomalous cyclotron resonance in InGaAs/InAlAs Rashba systems,Y. Imanaka, T. Takamasu, S. Nitta, M. Akabori, and S. Yamada,the 31st International Conference on the Physics of Semiconductors, Zurich, Switzerland, July 29-August 3 (2012).
  • 22. Low temperature anisotropic transport and related structure analysis in InGaAs two-dimensional electron gas bilayer system,W. Wei, S. Hidaka, H. Iwase, M. Akabori, S. Yamada, H. Hirayama, and Y. Suzuki,the 17th International Conference on Molecular Beam Epitaxy, Nara Japan, September 23-28 (2012).
  • 23. Magneto-transport properties of InAs nanowires laterally-grown by selective area molecular beam epitaxy on GaAs (110) masked substrates,M. Akabori and S. Yamada,the 31st International Conference on the Physics of Semiconductors, Zurich, Switzerland, July 29-August 3 (2012).
  • 24. Verification of electrical spin injection into InGaAs two-dimensional electron gas from CoFe electrode by four-terminal non-local geometry,S. Hidaka, T. Kondo, M. Akabori, and S. Yamada,the 31st International Conference on the Physics of Semiconductors, Zurich, Switzerland, July 29-August 3 (2012).
  • 25. Fabrication and analysis of AlN/GaAs(001) metal-insulator-semiconductor structure,M. Kudo, H. A. Shih, M. Akabori, T. Suzuki,2011 International Conference on Solid State Devices and Materials, Nagoya, Japan, September 28-30 (2011).
  • 26. Sputtered amorphous AlN gate dielectric for AlGaN/GaN metal-insulator-semiconductor heterojunction field-effect transistor,H. A. Shih, M. Kudo, M. Akabori, T. Suzuki,2011 International Conference on Solid State Devices and Materials, Nagoya, Japan, September 28-30 (2011).
  • 27. Study of subband structure and Rashba spin-orbit interaction in In0.75Ga0.25As two-dimensionla electron gas bi-layer system via temperature dependent magneto-resistance measurements,M. Akabori, K. Morimoto, W. Wei, H. Iwase, S. Yamada,the 19th International Conference on Electronic Properties of Two-Dimensional Systems, Tallahassee, FL, USA, July 25-30 (2011).
  • 28. Electron accumulation and carrier recombination at surfaces and interfaces in InAs thin films bonded on low-k flexible substrates,H. Takita, C. T. Nguyen, S. P. Le, M. Akabori, T. Suzuki,2011 Topical Workshop on Heterostructure Microelectronics, Gifu, Japan, August 28-31 (2011).
  • 29. Experimental study of spin-injection into an InGaAs two-dimensional electron system with high In composition using CoFe-electrodes,S. Hidaka, T. Kondo, M. Akabori, S. Yamada,the 19th International Conference on Electronic Properties of Two-Dimensional Systems, Tallahassee, FL, USA, July 25-30 (2011).
  • 30. Selective Area Molecular Beam Epitaxy of InAs Nanowires on Various Oriented GaAs Substrates,M. Akabori, T. Murakami, S. Yamada,the 15th International Conference on Modulated Semiconductor Structures, Tallahassee, FL, USA, July 25-30 (2011).
  • 31. Magnetic field dependency of spin-splitting in InGaAs/InAlAs two-dimensional elctron gas with strong Rashba spin-orbit coupling",S. Yamada, S. Nitta, H. Iwase, M. Akabori, Y. Imanaka, T. Takamasu,the 19th International Conference on the Application of High Magnetic Fields in Semiconductor Physics and Nanotechnology, Fukuoka, Japan, August 1-6 (2010).
  • 32. Growth and magneto-transport characterization of double-doped InGaAs/InAlAs heterostructures with high indium compositions,M. Akabori, K. Morimoto, W. Wei, H. Iwase, and S. Yamada,the 30th International Conference on the Physics of Semiconductors, Seoul, Korea, July 25- 30 (2010).
  • 33. Spring characteristics of circular arc shaped 3D micro-cantilevers fabricated using III-V semiconductor strain-driven bending process,T. K. Sasaki, H. Iwase, J. Wang, M. Akabori, and S. Yamada,the 30th International Conference on the Physics of Semiconductors, Seoul, Korea, July 25- 30 (2010).
  • 34. Influence of Silicon Doping on the SA-MOVPE of InAs Nanowires,K. Sladek, A. Penz, K. Weis, S. Wirths, C. Volk, S. Alagha, M. Akabori, S. Lenk, M. Luysberg, H. Lueth, H. Hardtdegen, Th. Schaepers, and D. Gruetzmacher,2010 Materials Research Society Spring Meeting, San Francisco, California, USA, April 5-9 (2010).
  • 35. Comparison of growth behavior for undoped and Si-doped GaAs and InAs nanowires deposited by selective area MOVPE,K. Sladek, A. Penz, M. Akabori, H. Hardtdegen and D. Gruetzmacher,the 8th International Workshop on Epitaxial Semiconductors on Patterned Substrates and Novel Index Surfaces, Como, Italy, June 14-18 (2010).
  • 36. Anisotropic electron transport of two-dimensional electron gases in compressively-strained, lattice-matched, and tensilely-strained InGaAs on InP(001),M. Akabori, T. Q. Trinh, M. Kudo, Th. Schaepers, H. Hardtdegen, and T. Suzuki,the 2009 Topical Workshop on Heterostructure Microelectronics, Nagano, Japan, August 25-28 (2009).
  • 37. Catalyst free MOVPE of GaAs- and InAs-Based Nanowires in N2 atmosphere,K. Sladek, M. Akabori, A. Penz, M. von der Ahe, S. Estevez Hernandez, Th. Schaepers, N. Demarin, H. Hardtdegen, and D. Gruetzmacher,The 13th European Workshop on Metalorganic Vapor Phase Epitaxy, Ulm, Germany, June 7-10 (2009)
  • 38. Strain-enhanced electron mobility anisotropy and piezoelectric scattering in InGaAs/InP 2DEGs,M. Akabori, T. Q. Trinh, M. Kudo, Th. Schaepers, H. Hardtdegen, and T. Suzuki,the 18th International Conference on Electronic Properties of Two-Dimensional Systems, Kobe, Japan, July 19-24 (2009).
  • 39. InxGa1-xAs/InP selective area MOVPE for non-magnetic semiconductor spintronics,M. Akabori, V. A. Guzenko, Th. Schaepers and H. Hardtdegen,14th International Conference of Metalorganic Vapor Phase Epitaxy, Mets, France, June 1-6 (2008)
  • 40. Optimization of GaInAs/InP heterostructures for non-magnetic semiconductor spintronics,M. Akabori, M. Hagedorn, V. A. Guzenko, Th. Schaepers and H. Hardtdegen,Nanoelectronics Days 2008, Aachen, Germany, May 13-16 (2008)

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