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Toshi-kazu Suzuki Professor
School of Materials Science、Applied Physics Area

Results 21-40 of about 61

  • 21. Carrier recombination lifetime in InAs thin films bonded on low-k flexible substrates,T. Suzuki, H. Takita, C. T. Nguyen, and K. Iiyama,AIP Advances,2,042105,(2012).
  • 22. Interface analysis of AlN/InAs(001) and AlN/Ge/InAs(001) by angle-resolved X-ray photoelectron spectroscopy,M. Kudo, H.-A. Shih, and T. Suzuki,44th International Conference on Solid State Devices and Materials,PS-6-18,(2012).
  • 23. Characterization of gate-control efficiency in AlN/AlGaN/GaN metal-insulator-semiconductor structure by capacitance-frequency-temperature mapping,H.-A. Shih, T. Q. Nguyen, M. Kudo, and T. Suzuki,44th International Conference on Solid State Devices and Materials,F-7-3,(2012).
  • 24. Sputtered amorphous AlN gate dielectric for AlGaN/GaN metal insulator-semiconductor heterojunction field-effect transistor,H. A. Shih, M. Kudo, M. Akabori, and T. Suzuki,43rd Int. Conf. on Solid State Devices and Materials, Nagoya,A-1-6,(2011).
  • 25. Fabrication and analysis of AlN/GaAs(001) metal-insulator-semiconductor structure,M. Kudo, H. Shih, M. Akabori, and T. Suzuki,43rd Int. Conf. on Solid State Devices and Materials, Nagoya,A-8-6,(2011).
  • 26. Fabrication and analysis of AlN/GaAs(001) and AlN/Ge/GaAs(001)metal-insulator-semiconductor structures,M. Kudo, H. Shih, M. Akabori, and T. Suzuki,Jpn. J. Appl. Phys.,51,02BF07,(2012).
  • 27. Application of sputtering-deposited AlN films to gate dielectric for AlGaN/GaN Metal-insulator-semiconductor heterojunction field-effect transistor,H.-A. Shih, M. Kudo, M. Akabori, and T. Suzuki,Jpn. J. Appl. Phys.,51,02BF01,(2012)
  • 28. Transparent oxide thin-film transistors using n-(In2O3)0.9(SnO2)0.1/InGaZnO4 modulation-doped heterostructures,S. Taniguchi, M. Yokozeki, M. Ikeda, and T. Suzuki,Jpn. J. Appl. Phys.,50,04DF11,(2011).
  • 29. Modulation-doped heterostructures using transparent oxide semiconductors,S. Taniguchi, M. Yokozeki, M. Ikeda, and T. Suzuki,The 37th International Symposium on Compound Semiconductors, Oral presentation,p. 265,(2010).
  • 30. Electron transport properties of InAs ultrathin films obtained by epitaxial lift-off and van der Waals bonding on flexible substrates,H. Takita, N. Hashimoto, C. T. Nguyen, M. Kudo, M. Akabori, and T. Suzuki,Appl. Phys. Lett.,97,012102,(2010).
  • 31. Strain-enhanced electron mobility anisotropy in InxGa1-xAs/InP two-dimensional electron gases,M. Akabori, T. Q. Trinh, M. Kudo, H. Hardtdegen, Th. Schaepers, and T. Suzuki,Physica E,(2010).
  • 32. Delay time analysis of AlGaN/GaN heterojunction field effect transistors with AlN or SiN surface passivation,N. Tanaka, Y. Sumida, H. Kawai, and T. Suzuki,Jpn. J. Appl. Phys.,48,04C099,(2009).
  • 33. Anisotropic electron transport of two-dimensional electron gases in compressively-strained, lattice-matched, and tensilely-strained InGaAs on InP(001),M. Akabori, T. Q. Trinh, M. Kudo, Th. Schaepers, H. Hardtdegen, T. Suzuki,8th Topical Workshop on Heterostructure Microelectronics,WeC-9, pp. 54-55,(2009).
  • 34. High-electron-mobility InAs thin layers down to ~ 100 nmobtained by epitaxial lift-off and normal/inverted van derWaals bonding on flexible substrates,H. Takita, M. Akabori, and T. Suzuki,2009 International Conference on Solid State Devices and Materials (SSDM2009), Late news, Oral presentation,J-2-7L,(2009).
  • 35. High-frequency characteristics and effective saturation electron velocity of AlGaN/GaN heterojunction field effect transistors with AlN or SiN passivation,N. Tanaka, Y. Sumida, H. Kawai, and T. Suzuki,2008 International Conference on Solid State Devices and Materials, Oral presentation,pp. 156-157,(2008).
  • 36. Structural, optical, and electrical characterizations of epitaxial lifted-off InGaAs/InAlAs metamorphic heterostructures bonded on AlN ceramic substrates,Y. Jeong, M. Shindo, H. Takita, M. Akabori, and T. Suzuki,physica status solidi (c),vol. 5,pp. 2787-2790,(2008).
  • 37. Reduction of self-heating in AlGaN/GaN HFETs using thick AlN surface passivation films,N. Tanaka, H. Takita, Y. Sumida, and T. Suzuki,physica status solidi (c),vol. 5,2972-2975,(2008).
  • 38. Spin-splitting analysis of a two-dimensional electron gas in almost strain-free In0.89Ga0.11Sb/In0.88Al0.12Sb by magnetoresistance measurement,M. Akabori, V. A. Guzenko, T. Sato, Th. Schaepers, T. Suzuki, and S. Yamada,Phys. Rev. B,vol. 77,pp. 205320-1-6,(2008).
  • 39. Electron transport properties of epitaxial lifted-off InAs thin films bonded on SiO2/Si wafers,H. Takita, Y. Jeong, J. Arita, and T. Suzuki,7th Topical Workshop on Heterostructure Microelectronics,pp. 59-60,(2007).
  • 40. High electron mobility in epitaxial lifted-off InGaAs/InAlAs metamorphic heterostructures bonded on AlN ceramic substrates,Y. Jeong, M. Shindo, M. Akabori, and T. Suzuki,The 34th International Symposium on Compound Semiconductors, Oral presentation,p. 143,(2007).

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