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Keisuke Ohdaira Associate Professor
Green Devices Research Center

Results 21-40 of about 85

  • 21.　Formation of Polycrystalline Silicon Films by Rapid Crystallization，Keisuke Ohdaira，International Photovoltaic Young Scientist Symposium，Nara Institute of Science and Technology (NAIST), Japan，December 5, 2011
  • 22.　Pixel-controlling-substrates of FPD Fabricated by Micro-Assembling of Millions of IC Chips and Automatic Metal Interconnection among Chips，Takahiro Yagi, Nguyen Kieu Thi Thanh, Hideaki Kugai, Keisuke Ohdaira, Hideki Matsumura，IDW'11，名古屋，2011年12月7日〜9日
  • 23.　Low-temperature Phosphorus Doping To Silicon Using Phosphorus-related Radicals，Taro Hayakawa, Yuuki Nakashima, Koichi Koyama, Keisuke Ohdaira, and Hideki Matsumura，MRS Fall Meeting，Boston，2011年11月28日〜12月2日
  • 24.　A Novel Method for Low-Resistivity Metal-Interconnection by Using Metallic Functional Liquids and Catalytically Generated Hydrogen Atoms，Nguyen T. T. Kieu, Keisuke Ohdaira, Tatsuya Shimoda, Hideki Matsumura，MRS Fall Meeting，Boston，2011年11月28日〜12月2日
  • 25.　Why can Cat-CVD SiNx/a-Si Stacked Layers Realize Extremely LowSurface Recombination Velocity On Crystalline Silicon?，Koichi Koyama, Koichi Higashimine,Kazuhiro Kato,Keisuke Ohdaira, Nobuo Otsuka and Hideki Matsumura，PVSEC'11，福岡，2011年11月28日〜12月2日
  • 26.　Polycrystalline Silicon Films with Nanometer-Sized Dense Fine Grains Formed by Flash-Lamp-Induced Crystallization，Keisuke Ohdaira, Shohei Ishii, Naohito Tomura, and Hideki Matsumura，Asian Conference on Nanoscience & Nanotechnology (AsiaNANO 2010)，Miraikan, Tokyo, Japan，November 1-3, 2010
  • 27.　Frequency response of amorphous silicon photoconductors，Hideyuki Otosaka, Shingo Ebuchi, Takeo Maruyama, Koichi Iiyama, Keisuke Ohdaira, and Hideki Matsumura，16th Opto-Electronics and Communications Conference (OECC)，Kaohsiung, Taiwan，4-8 July 2011
  • 28.　Liquid-phase Explosive Crystallization of Electron-beam-evaporated a-Si Films Induced by Flash Lamp Annealing，Keisuke Ohdaira and Hideki Matsumura，International Conference on Materials for Advanced Technologies 2011 (The 5th Asian Conference on Crystal Growth and Crystal Technology)，Suntec Singapore International Convention & Exhibition Centre，26 June - 1 July 2011
  • 29.　Carrier Recombination Mechanisms in Solar Cells Fabricated Using Flash-Lamp-Crystallized Polycrystalline Silicon Films，Keisuke Ohdaira, Shohei Ishii, Naohito Tomura, and Hideki Matsumura，The 37th IEEE Photovoltaic Specialists Conference，Seattle, Washington, USA，June 19-24, 2011
  • 30.　Selection of Material for the Back Electrodes of Thin-FilmSolar Cells using Polycrystalline Silicon Films Formed byFlash Lamp Annealing，K. Ohdaira, T. Fujiwara, K. Shiba and H. Matsumura，2009 International Conference on Solid State Devices and Materials (SSDM 2009)，Miyagi, Japan，October 7-9, 2009
  • 31.　Catalytic decomposition of NH3 on heated Ru and W surfaces，H. Umemoto, Y. Kashiwagi, K. Ohdaira, H. Kobayashi, and K. Yasui，6th International Conference on Hot-Wire Chemical Vapor Deposition (HWCVD6)，Ecole Polytechnique, Palaiseau, France，September 13-17, 2010
  • 32.　Extremely low recombination velocity on crystalline silicon surfaces realized by low-temperature impurity doping in Cat-CVD technology，T. Hayakawa, M. Miyamoto, K. Koyama, K. Ohdaira, and H. Matsumura，6th International Conference on Hot-Wire Chemical Vapor Deposition (HWCVD6)，Ecole Polytechnique, Palaiseau, France，September 13-17, 2010
  • 33.　Excellent passivation effect on Cat-CVD SiNx/a-Si stack films on Si substrates，K. Koyama, K. Ohdaira, and H. Matsumura，6th International Conference on Hot-Wire Chemical Vapor Deposition (HWCVD6)，Ecole Polytechnique, Palaiseau, France，September 13-17, 2010
  • 34.　Flash-lamp-crystallized polycrystalline silicon films with high hydrogen concentration formed from Cat-CVD a-Si films，K. Ohdaira, N. Tomura, S. Ishii, and H. Matsumura，6th International Conference on Hot-Wire Chemical Vapor Deposition (HWCVD6)，Ecole Polytechnique, Palaiseau, France，September 13-17, 2010
  • 35.　Advantage of plasma-less deposition in Cat-CVD to performance of electric devices，H. Matsumura, T. Hasegawa, S. Nishizaki, and K. Ohdaira，6th International Conference on Hot-Wire Chemical Vapor Deposition (HWCVD6)，Ecole Polytechnique, Palaiseau, France，September 13-17, 2010
  • 36.　Cat-CVD (Catalytic-CVD): Its Fundamentals and Application，H. Matsumura and K. Ohdaira，EuroCVD-17 and CVD XVII，Vienna, Austria，4-9 October, 2009
  • 37.　Propagation Loss of Amorphous Silicon Optical Waveguides at the 0.8 μm-Wavelength Range,，T. Asukai, M. Inamoto, T. Maruyama, K. Iiyama, K. Ohdaira, and H. Matsumura，7th IEEE International Conference on Group IV Photonics (GFP2010)，Beijing, China，1-3 September 2010
  • 38.　Study of High Gas Barrier Performance of Film with Coated SiOxNy Layers，H. Yanagihara, C. Ookawara, S. Yoshida, K. Ohdaira, and H.Matsumura，53rd Society of Vacuum Coatings Annual Technical Conference，Orlando World Center Marriott Resort and Convention Center, Orlando, Florida, USA，April 17-22, 2010
  • 39.　Defect Termination of Flash-Lamp-Crystallized Polycrystalline Silicon Films by Undesorped Hydrogen Atoms，Keisuke Ohdaira, Takuya Nishikawa, Shohei Ishii, Naohito Tomura, Koichi Koyama, and Hideki Matsumura，25th European Photovoltaic Solar Energy Conference and Exhibition (5th World Conference on Photovoltaic Energy Conversion)，Valencia, Spain，6-10 September 2010
  • 40.　1.5 cm/s Surface Recombination Velocity Realized by Cat-CVD SiNx/i-a-Si Double Passivation Layers on Crystalline Si，K. Koyama, K. Ohdaira, and H. Matsumura，25th European Photovoltaic Solar Energy Conference and Exhibition (5th World Conference on Photovoltaic Energy Conversion)，Valencia, Spain，6-10 September 2010

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