Susumu Horita Associate Professor
School of Materials Science（Department of Materials Science・Materials Characterization and Device）

Results 41-56 of about 56

• 41.　Ferroelectric Properties of Epitaxial Bi4Ti3O12 Films Deposited on Epitaxial (100)Ir and (100)Pt Films on Si by Sputtering，S.Horita, S.Sasaki, O.kitagawa and S.Horii，The 6th International Symp. on Sputtering and Plasma Processes，2001.6.13
• 42.　A New Principle of Ferroelectric Gate FET Memory，T.D.Khoa and S.Horita，1st Inter. Meeting on Ferroelectric Random Access Memories FeRAM 2001，Gotenba，2001.11.20
• 43.　Improvement of Surface Crystalline Quality of an Epitaxial (100) ZrN Film as a Bottom Electrode for Ferroelectric Capacitor，S.Horii, T.Toda and S.Horita，Material Research Society(MRS) Fall Meeting，Boston, U.S.A.，2001.11.26
• 44.　High Deposition Rate of Epitaxial (100) Iridium Film on (100)YSZ/(100)Si Structure by Sputtering，T.D.Khoa, S.Horii and S.Horita，13th Inter.Conf.on Crystal Growth and 8th Conf. on Vapor Growth and Epitaxy，2001.8.2
• 45.　Preparation of (100) Ir Film on an HF+Hydrazine treated epitaxial (100)ZrN/(100)Si Structure，S.Horii, T.Toda, T.D.Khoa and S.Horita，13th Inter.Conf.on Crystal Growth and 8th Conf. on Vapor Growth and Epitaxy，Kyoto，2001.8.2
• 46.　Study on the Formation of the Periodic Grain Boundary Produced by a Nd:YAG Pulse Laser Beam with Linear Polarization，N.Nakata, H.Kaki and S.Horita，2001 International Workshop on Active-Matrix Liquid-Crystal Displays(AM-LCD 2001)，2001.7.12
• 47.　Control of the Grain Boundary Location in a Crystallized Si Film on a Glass Substrate by Pulse Lazer beam with Linearly Polarization，Y.Nakata and S.Horita，Material Research Society(MRS) Fall Meeting，Boston, U.S.A.，2000.11.30
• 48.　Supression of Oxidation of an Epitaxial (100)ZrN Film on Si during the Deposition of Ir Film，S.Horii and S.Horita，Material Research Society(MRS) Fall Meeting，Boston, U.S.A.，2000.11.27
• 49.　Crystallization of an a-Si film by a Nd:YAG pulse laser beam with linear polarization，N,Nakata, A.Shimoyama and S.Horita，2000 International Workshop on Active-Matrix Liquid-Crystal Displays(AM-LCD 2000),Kogakuin Univ. Tokyo,，Kyoto，2000.6.14
• 50.　FERROELECTRIC PROPERTIES OF AN EPITAXIAL PZT/Ir/ZrN/Si STRUCTURE BY SPUTTERING，S.Horii, S.Yokoyama and S.Horita，12th IEEE International Symposium on the Application of Ferroelectrics, ISAF 2000, pp.133, Honolulu, Hawaii，Hawaii，2000.7.31
• 51.　(100)YSZ/(100)Si基板上へのヘテロエピタキシャル(100)Ir及び(001)PZT薄膜の膜質特性，堀田　將，平成11年度広域研究会A「ヘテロエピタキシャル成長技術を用いた新機能デバイスの研究開発」報告書,pp.4-11,財団法人中部科学技術センター，2000.3
• 52.　Improvement of the electrical properites of heteroepitaxial yttria-stabilized zirconia fillms(YSZ) on Si prepared by reactive sputtering，S.Horita, H.Nakajima and T.Kuniya，The 5th International Symp. on Sputtering and Plasma Processes, Proc. EI 1-2, pp.3-4.，金沢，1999.6.16
• 53.　Heteroepitaxial Growth of PZT Film on (100)Ir/(100)YSZ/(100)Si Substrate Structure Prepared by Reactive Sputtering，S.Horii, S.Yokoyama and S.Horita，The 5th International Symp. on Sputtering and Plasma Processes, Proc. EI 3-2, pp.61-62.，Kanazawa，1999.6.16
• 54.　Low Voltage Saturation of a PZT Film on (100)Ir/(100)YSZ/(100)Si Substrate Structure Prepared by Reactive Sputtering，S.Horii, S.Yokoyama, T.Kuniya and S.Horita，the 1999 International Conference on Solid State Device and Material, Extended Abs. pp.398-399.，Tokyo，1999.9
• 55.　Material properites of heteroepitaxial (001) and (111) PZT films on Si substrates prepared by sputtering，S.Horita, S.Horii and S.Yokoyama，The 1999 Joint International Meeting (196 th Meeting of the Electrochemical Society), Abstract No.1044, in Hawaii，Hawaii，1999.10
• 56.　Heteroepitaxial Growth of Ir/ZrN Layered Electrode on (100)Si Substrate for Ferroelectric Capacitor，S.Horii, S.Yokoyama and S.Horita，Material Research Society(MRS) 1999 Fall Meeting, Abs.Y3.6, pp.440.，Boston, U.S.A.，1999.11.29

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