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Masashi Akabori Associate Professor
Center for Nano Materials and Technology

Results 41-55 of about 55

  • 41. InGaAs/InP lateral wire growth on SiO2/InP(001) masked substrates,M. Akabori, V. A. Guzenko, Th. Schaepers and H. Hardtdegen,3rd Nanowire Growth Workshop 2008, Duisburg, Germany, September 15-16 (2008)
  • 42. InxGa1-xAs/InP selective area MOVPE for non-magnetic semiconductor spintronics,M. Akabori, V. A. Guzenko, Th. Schaepers and H. Hardtdegen,14th International Conference of Metalorganic Vapor Phase Epitaxy, Mets, France, June 1-6 (2008)
  • 43. Optimization of GaInAs/InP heterostructures for non-magnetic semiconductor spintronics,M. Akabori, M. Hagedorn, V. A. Guzenko, Th. Schaepers and H. Hardtdegen,Nanoelectronics Days 2008, Aachen, Germany, May 13-16 (2008)
  • 44. MOVPE of modulation doped GaAs/AlGaAs core-shell nanowires using alternative source materials,K. Sladek, V. Klinger, M. Akabori, H. Hardtdegen and D. Gruetzmacher,3rd Nanowire Growth Workshop 2008, Duisburg, Germany, September 15-16 (2008)
  • 45. Spin-orbit coupling in InGaSb/InAlSb,M. Akabori, V. A. Guzenko, T. Sato, Th. Schaepers, T. Suzuki and S. Yamada,2007 Workshop of Virtual Institute for Spin-electronics, Aachen, Germany, April 16-17 (2007)
  • 46. Characterization and Weak-Antilocalization measurements of InGaAs/InP quantum wire structures,M. Hagedorn, M. Akabori, H. Hardtdegen, V. Guzenko and Th. Schaepers,the 72nd Annual Meeting of the Deutsche Physikalische Gesellschaft and DPG - spring meeting of the Division Condensed Matter , Berlin, Germany, February 25-29 (2008)
  • 47. Spin-orbit coupling in InGaSb/InAlSb and InGaAs/InP 2DEGs,V. A. Guzenko, M. Akabori, Th. Schaepers, Se. Estevez, H. Hardtdegen, T. Sato, T. Suzuki and S. Yamada,the 72nd Annual Meeting of the Deutsche Physikalische Gesellschaft and DPG - spring meeting of the Division Condensed Matter , Berlin, Germany, February 25-29 (2008)
  • 48. Fabrication of 3D micro/nano-structures based on MBE grown strained semiconductor layers,H. Iwase, H. Choi, M. Akabori, T. Suzuki, S. Yamada, D. Yamamoto and T. Ando,the 13th International Conference on Modulated Semiconductor Structures, Genoa, Italy, July 16-20 (2007)
  • 49. High Electron Mobility in Epitaxial Lifted-o_ InGaAs/InAlAs Metamorphic Heterostructures Bonded on AlN Ceramic Substrates,Y. Jeong, M. Shindo, M. Akabori and T. Suzuki,the 34th International Symposium on Compound Semiconductors, Kyoto, October 15-18 (2007)
  • 50. Spin injection in FM/2DEG/FM structures in high-quality In0.75Ga0.25As/In0.75A0.25lAs inverted HEMTs,H. Choi, A. Nogami, T. Kakegawa, M. Akabori and S. Yamada,the 17th International Conference on Electronic Properties of Two-Dimensional Systems, Genoa, Italy, July 16-20 (2007)
  • 51. Optimization of InP/GaInAs structures with respect to Rashba spin-orbit coupling,M. Akabori, M. Hagedorn, V. A. Guzenko, Th. Schaepers and H. Hardtdegen,the 72nd Annual Meeting of the Deutsche Physikalische Gesellschaft and DPG - spring meeting of the Division Condensed Matter , Berlin, Germany, February 25-29 (2008)
  • 52. Weak antilocalization measurements on a 2-dimensional electron gas in an InGaSb/InAlSb heterostructure,V. A. Guzenko, M. Akabori, Th. Schaepers, S. Cabanas, T. Sato, T. Suzuki and S. Yamada,the 4th International Conference on Physics and Application of Spin-related Phenomena in Semiconductors, Sendai, Japan, August 15-18 (2006)
  • 53. Spin splitting characterization of an InGaSb 2DEG by using magnetoresistance measurements with tilted magnetic fields,M. Akabori, V. A. Guzenko, T. Kakegawa, T. Sato, Th. Schaepers, T. Suzuki and S. Yamada,the 28th International Conference on the Physics of Semiconductors, Vienna, Austria, July 24-29 (2006)
  • 54. Spin-orbit coupling in InGaS-based two-dimensional electron gas,V. A. Guzenko, M. Akabori, Th. Schaepers, S. Cabanas, T. Sato, T. Suzuki and S. Yamada,the 71st Annual Meeting of the Deutsche Physikalische Gesellschaft and DPG - spring meeting of the Division Condensed Matter , Regensburg, Germany, March 26-30 (2007)
  • 55. Spin-orbit Interactions in High In-content InGaAs/InAlAs Inverted Heterojunctions for Rashba Spintronics Devices,H. Choi, Y. Kitta, T. Kakegawa, Y. Jeong, M. Akabori, T. Suzuki, and S. Yamada,the 28th International Conference on the Physics of Semiconductors, Vienna, Austria, July 24-29 (2006)

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