Keisuke Ohdaira Associate Professor
Green Devices Research Center

Results 41-60 of about 85

• 41.　Flash-lamp-crystallized Polycrystalline Silicon Films with Remarkably Long Minority Carrier Lifetimes，K. Ohdaira, H. Takemoto, T. Nishikawa, H. Matsumura，19th International Photovoltaic Science and Engineering Conference and Exhibition， ICC Jeju, Korea，November 9-13, 2009
• 42.　Surface Treatment of Crystalline Silicon Realizing Extremely Low Surface Recombination Velocity Using Catalytically Generated Radicals，Keisuke Ohdaira, Motoharu Miyamoto, Koichi Koyama, and Hideki Matsumura，35th IEEE Photovoltaic Specialists Conference，Honolulu, Hawai'i，June 20-25, 2010
• 43.　Carrier Transport Properties of Flash-Lamp-Crystallized Poly-Si Films，Keisuke Ohdaira, Takuya Nishikawa, Shohei Ishii, Naohito Tomura, and Hideki Matsumura，35th IEEE Photovoltaic Specialists Conference，Honolulu, Hawai'i，June 20-25, 2010
• 44.　Flash-lamp-induced Crystallization of amorphous silicon films in different explosive crystallization modes，Keisuke Ohdaira, Takuya Nishikawa, and Hideki Matsumura，Renewable Energy 2010，Yokohama, Japan，27 June-2 July, 2010
• 45.　Cat-CVD Technology for nano-scale surface modification，Hideki Matsumura and Keisuke Ohdaira，2010 International Symposium on Atom-scale Silicon Hybrid Nanotechnologies for 'More-than-Moore' & 'Beyond CMOS' Era，Garden Court, University of Southampton, United Kingdam，March 1-2, 2010
• 46.　IMPROVED PERFORMANCE OF THIN-FILM SOLAR CELLS USINGSURFACE-MORPHOLOGY-CONTROLLED POLY-SI FILMS CRYSTALLIZED BY FLASH LAMP ANNEALING，Keisuke Ohdaira, Hiroyuki Takemoto, Kazuhiro Shiba, Takuya Nishikawa, Koichi Koyama, and Hideki Matsumura，34th IEEE Photovoltaic Specialists Conference，Philadelphia, USA，7-12 June 2009
• 47.　Application of Silicon Nitride by Catalytic Chemical Vapor Deposition (Cat-CVD) to CMOS ISFET Sensor LSI，Y. Kagohashi, U. Ozawa, S. Uno, K. Nakazato, K. Ohdaira, and H. Matsumura，Fifth International Conference on Molecular Electronics and Bioelectronics, D-P13 ，Miyazaki, Japan，March 2009
• 48.　a-Si TFTs with current drivability equivalent to poly-Si TFTs，Shogo Nishizaki, Keisuke Ohdaira, and Hideki Matsumura，International Thin Film Transistor Conference 2009 (ITC'09)，Ecole Polytechnique, Palaiseau, France，5-6 March, 2009
• 49.　Investigation of Cat-CVD Amorphous Silicon Film Properties under High Catalyzer Temperature，Y.-T. Huang, Kuo-His Yen, S. Nishizaki, K. Ohdaira, H. Matsumura, Yen-Tang Huang, Hsiao-Wen Zan, Chuang-Ch Tsai，23rd International Conference on Amorphous and Nanocrystalline Semiconductors，Utrecht, the Netherlands，August 23 - 28, 2009
• 50.　SUPERIOR POTETIAL OF FLASH-LAMP-CRYSTALLIZED POLY-SI FILMS FOR APPLICATION TO THIN -FILM POLY-SI SOLAR CELLS，Keisuke Ohdaira, Hiroyuki Takemoto, Kazuhiko Shiba, Takuya Nishikawa, Koichi Koyama, and Hideki Matsumura，24th European Photovoltaic Solar Energy Conference and Exhibition，Hamburg, Germany，2009年9月21-25日
• 51.　Advantage of Plasma-Less Deposition; Cat-CVD Fabrication of a-Si TFT with CurrentDrivability Equivalent to Poly-Si TFT，H Matsumura, S Nishizaki, K Ohdaira，23rd International Conference on Amorphous and Nanocrystalline Semiconductors，Utrecht, the Netherlands，August 23 - 28, 2009
• 52.　Polycrystalline Si Films with UniqueMicrostructures Formed from Amorphous SiFilms by Non-thermal Equilibrium Flash LampAnnealing，K Ohdaira, T Nishikawa, K Shiba, H Takemoto, HMatsumura，23rd International Conference on Amorphous and Nanocrystalline Semiconductors，Utrecht, the Netherlands，August 23 - 28, 2009
• 53.　Drastic Reduction in Optical Reflectance of Flash-Lamp-Crystallized Poly-Si Films by Conventional Wet Etching，Keisuke Ohdaira, Takuya Nishikawa, Kazuhiro Shiba, Hiroyuki Takemoto, and Hideki Matsumura，18th Internatonal Photovoltaic Science and Engineering Conference & Exhibition，Science City Convention Center, Kolkata, India，19-23 January, 2009
• 54.　Comparison of a-Si TFT’s fabricated by Cat-CVD and PECVD method，Shogo Nishizaki, Keisuke Ohdaira and Hideki Matsumura，5th Int. Conf. on Hot-Wire Chemical Vapor Deposition (HWCVD, Cat-CVD),，Cambridge, USA，August 20-24, 2008
• 55.　A novel patterning technique using super-hydrophobic PTFE thin films by Cat-CVD method，Michihisa Takachi, Hiroaki Yasuoka, Keisuke Ohdaira, Tatsuya Shimoda, and Hideki Matsumura，5th Int. Conf. on Hot-Wire Chemical Vapor Deposition (HWCVD, Cat-CVD)，Cambridge, USA，August 20-24, 2008
• 56.　New Application of Cat-CVD Technology and Recent Status of Industrial Implementation，Hideki Matsumura and Keisuke Ohdaira，5th Int. Conf. on Hot-Wire Chemical Vapor Deposition (HWCVD, Cat-CVD)，Cambridge, USA，August 20-24, 2008
• 57.　THIN FILM P-I-N POLY-SI SOLAR CELLS DIRECTLY CONVERTED FROM P-I-N A-SI STRUCTURES BY A SINGLE SHOT OF FLASH LAMP，Keisuke Ohdaira, Tomoko Fujiwara, Yohei Endo, Kazuhiro Shiba, Hiroyuki Takemoto, Shogo Nishizaki, Young Rae Jang, Kensuke Nishioka, and Hideki Matsumura，33rd IEEE Photovoltaic Specialists Conf.，San Diego, USA，May 11-16, 2008
• 58.　Formation of micrometer-order-thick poly-Si films on textured glass substrates by flash lamp annealing of a-Si films prepared by catalytic chemical vapor deposition，K. Ohdaira, T. Fujiwara, Y. Endo, K. Nishioka, and H. Matsumura，The 4th Asian Conf. on Cryst. Growth and Cryst. Tech.，Sendai, Japan，21-24 May, 2008
• 59.　Future of Thin Film Transistors for Flat Panel Displays，H. Matsumura, K. Ohdaira，The Fifteenth International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD ’08)，The Natipnal Museum of Emerging Science and Innovation, Tokyo，July 2-4, 2008
• 60.　Cat-CVD Technology and Its Application to Solar Cells，Hideki Matsumura and Keisuke Ohdaira，International Symposium on Solar Cell Technologies (ISSCT) 2008，Taipei International Convention Center, Taiwan，December 5-6, 2008

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