Syoji Yamada Professor
Center for Nano Materials and Technology

Results 1-20 of about 36

• 1.　Magnetic field dependency of spin-splittingin In0.75Ga0.25As/ In0.75Al0.25As two dimensional electron gas with strong Rashba spin-orbit coupling，Syoji Yamada, Shunsaku Nitta, Hiuma Iwase, Masashi Akabori, Yasutaka Imanaka and Tadashi Takamasu，Journal of Physics: Conference Series 012063，334，2011，October 2011
• 2.　Cyclotron resonance of two dimensional Rashba systems in InGaAs，Yasutaka Imanaka, Tadashi Takamasu, Shunsaku Nitta and Syoji Yamada，Journal of Physics: Conference Series 012061，334，2011，October 2011
• 3.　Selective area molecular beam epitaxy of InAs on GaAs (110) masked substrates for direct fabrication of planar nanowire field-effect transistors，M. Akabori, T. Murakami and S. Yamada，J. Crystal Growth，Vol. 345，pp. 22-26，2012
• 4.　Magneto-transport properties of InAs nanowires laterally-grown by selective area molecular beam epitaxy on GaAs (110) masked substrates，M. Akabori and S. Yamada，AIP Conf. Proc. of 31th Int. Conf. on Physics of Semiconductors，August 9, 2012
• 5.　Verification of electrical spin injection into InGaAs two-dimensional electron gas from CoFe electrode by four-terminal non-local geometry，S. Hidaka, T. Kondo, M. Akabori and S. Yamada，AIP Conf. Proc. of 31st Int. Conf. on Physics of Semiconductors，August 9, 2012
• 6.　Experimental study of spin-injection into an InGaAs two-dimensional electron system with high In composition using CoFe electrodes"，S. Hidaka, T. Kondo, M. Akabori, S. Yamada，Proc. 19th Int. Conf. on ELectronic Properties of Two-dimensional Systems，TuP-53
• 7.　Selective area molecular beam epitaxy of InAs nanowires on various oriented GaAs substrates，M. Akabori, T. Murakami, S. Yamada，Proc. 15th Int. Conf. on Modulated Semiconductor Structures，MoP-82
• 8.　Study of subband structure and Rashba spin-orbit interaction in InGaAs two-dimensional electron gas bi-layer system via temperature dependent magneto-resistance measurements，M. Akabori, K. Morimoto, T. Katayama, S. Hidaka, S. Yamada，Proc. 19th Int. Conf. on Electronic Properties of Two-Dimensional Systems，TuP-53
• 9.　Spring charaateristics of circular arc shaped 3D micro-cantilevers fabricated using III-V semiconductor strain-driven bending process，T. K. Sasaki, H. Iwase, J. Wang, M. Akabori, S. Yamada，Proc. 30th Int. Conf. on the Physics of Semiconductors，P2-392，July 29, 2010
• 10.　Growth and magneto-transport characterization of double-doped InGaAs/InAlAs heterostructures with high Indium compositions，M. Akabori, K. Morimoto, W. Wei, H. Iwase, S. Yamada，Proc. 30th Int. Conf. on the Physics of Semiconductors，P2-254，July 29, 2010
• 11.　Magnetic field dependency of spin-splitting in InGaAs/InAlAs two-dimensional electron gas with strong Rashba spin-orbit coupling，S. Yamada, S. Nitta, H. Iwase, M. Akabori, Y. Imanaka, T. Takamasu，The 19th Int. Conf. on the Application of High Magnetic Fields in Semiconductor Physics and Nanotechnology，ThP-19，Aug. 4, 2010
• 12.　Cyclotron resonance of two-dimensional Rashba systems in InGaAs，Y. Imanaka, T. Takamasu, S. Nitta, S. Yamada，The 19th Int. Conf. on the Application of High Magnetic Fields in Semiconductor Physics and Nanotechnology，ThP-18，Aug. 4, 2010
• 13.　Study of rolled cantilever-like structures based on MBE-grown strained multilayer structures，H. Iwase, H. K. Choi, S. Yamada, M. Tanaka, I. Kimpara，Intternational COnference on 14th Modulated Semiconductor Structures, ThmP69，July 19, 2009
• 14.　Spin-splitting in an almost strain-free InGaSb/InAlSb two-dimensional electron gas by magneto-resistance measurements，M. Akabori, V. A. Guzenko, T. Sato, Th Schapers, T. Suzuki, S. Yamada，Phys. Rev. B，77，205320，2008 Feb
• 15.　Spin?orbit interactions in high In-content InGaAs/InAlAs inverted heterojunctions for Rashba spintronic devices，H. K. Choi, T. Kakegawa, M. Akabori, T. Suzuki, S. Yamada，Physica E，40，8，2823-2828，2008 March
• 16.　Fabrication of 3D micro-cantilevers based on MBE-grown strained semiconductor layers，H. Iwase, H. K. Choi M. Akabori, T. Suzuki and S. Yamada, D. Yamamoto and T. Ando，Physica E，40，6，2210-2213，2008 March
• 17.　Micro-fabrication of a prototype hybrid GaAs/ceramics cantilever for SPM applications，Takashi Ohnishi, Takashi Miyamoto, Nozomi Tanifuji, Yasuaki Matsuda, Masakatsu Minami, Mikizou Motoki, SIgeru Hirose, Syoji Yamada，Sensors and Actuators A，137，34-40，2007 Jan.
• 18.　Spin-splitting in InGaSb/InALSb 2DEG having high Indium content，M. Akabori, T. Sunouchi, T. KakegawaT. SatoT. Suzuki and S. Yamada，34，1, 2，413-416，2006 August
• 19.　Microwave induced Schubnikov-de Haas-type oscillation in InGaAs/InALAs heterostructures，K. Fujii, K. Onishi, S. Yamada and S. Gozu，Physica E，34，1, 2，393-396，2006 August
• 20.　Dislocation-limited electron transport in InSb grown on GaAs (001)，T. Sato, T. Suzuki, S. Tomiya and S. Yamada，Physica B，376-377，579，2006

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