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Masashi Akabori Associate Professor
School of Materials Science、Applied Physics Area

Results 1-20 of about 55

  • 1. Molecular beam epitaxial growth of ferromagnetic-MnAs/III-As semiconductor heterostructures on (111)B surfaces for lateral spin device application,Md. E. Islam, K. Hayashida, M. Akabori,3rd International Symposium on Frontiers in Materials Science, SS-I1.2, Hanoi, Vietnam, September 28-30 (2016).
  • 2. Measurement of resonant spin Hall effect in InGaAs 2DEG bilayer system,S. Yamada, H. Iwase, Y. Soeda, M. Akabori, A. Fujimoto,9th International Conference on Physics and Applications of Spin-Related Phenomena in Solids, P2-13, Kobe, Japan, August 8-11 (2016).
  • 3. Subband transport and quantum Hall effect in InGaAs/InAlAs 2DEG bilayer with surface inversion layer,S. Yamada, Y. Soeda, M. Akabori, A. Fujimoto, Y. Imanaka, K. Takehana,9th International Conference on Physics and Applications of Spin-Related Phenomena in Solids, P1-24, Kobe, Japan, August 8-11 (2016).
  • 4. Sheet Electron Density Dependence of Electron Mobility Anisotropy in In0.75Ga0.25As/InP Two-Dimensional Electron Gas,M. Akabori,2016 Compound Semiconductor Week, MoP-ISCS-060, Toyama, Japan, June 26-30 (2016).
  • 5. Characterization of Spin-Orbit Coupling in Gated Wire Structures Using In0.75Ga0.25As/In0.75Al0.25As Inverted Heterojunctions,(Invited) T. Ohori, M. Akabori, S. Hidaka, and S. Yamada,2nd International Symposium on Frontiers in Materials Science, R3-3-3, Tokyo, Japan, November 19-21 (2015).
  • 6. In-Plane Transport Properties of MnAs/InAs/ GaAs(111)B Grown by Molecular Beam Epitaxy,Md. E. Islam, C. T. Nguyen, M. Akabori,2nd International Symposium on Frontiers in Materials Science, P3-26, Tokyo, Japan, November 19-21 (2015).
  • 7. Nitrogen and helium gas field ion source for nanofabrication,M. E. Schmidt, K. Nagahara, O. Takechi, M. Akabori, A. Yasaka, T. Shimoda and M. Mizuta, AVS 62nd International Symposium & Exhibition 2015, San Jose, California, USA, October 18-23 (2015).
  • 8. Cyclotron resonance in InGaAs Rashba bilayer systems,Y. Imanaka, K. Takehana, S. Hidaka, H. Iwase, M. Akabori, and S. Yamada, 21st International Conference on Electronic Properties of Two-Dimensional Systems, Th-PE-7, Sendai, Japan, July 26-31 (2015).
  • 9. Subband transport in two-dimensional electron gas bilayer system in narrow In0.75Ga0.25As well with center In0.75Al0.25As barrier,K. Hu, S. Hidaka, H. Iwase, M. Akabori, and S. Yamada,21st International Conference on Electronic Properties of Two-Dimensional Systems, Tu-PE-18, Sendai, Japan, July 26-31 (2015).
  • 10. Fabrication and characterization of gated parallel wire structures having a metamorphic InGaAs/InAlAs heterojunction with high In content,T. Ohori, M. Akabori, S. Hidaka, and S. Yamada,21st International Conference on Electronic Properties of Two-Dimensional Systems, Tu-PE-14, Sendai, Japan, July 26-31 (2015).
  • 11. Traces of fractional quantum Hall plateaus in asymmetric two-dimensional electron gas bilayer system in wide In0.75Ga0.25As well,S. Hidaka, H. Iwase, M. Akabori, S. Yamada, Y. Imanaka, and K. Takehana,21st International Conference on Electronic Properties of Two-Dimensional Systems, Mo-PE-22, Sendai, Japan, July 26-31 (2015).
  • 12. Contact properties of MnAs/InAs grown on GaAs(111)B by molecular beam epitaxy,Md. E. Islam, C. T. Nguyen, M. Akabori,the 5th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies, Niigata, Japan, June 16-19 (2015)
  • 13. In0.75Ga0.25As quantum point contact structures fabricated by novel N2 focused ion beam,M. Akabori, S. Hidaka, S. Yamada, T. Kozakai, O. Matsuda, A. Yasaka,2014 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices, Kanazawa, Japan, July 1-3 (2014)
  • 14. Top-down fabrication and electrical characterization of In0.75Ga0.25As/In0.75Al0.25As quantum nanostructures,M. Akabori, T. Ohori, S. Hidaka, S. Yamada, and A. Yasaka,International Symposium on Nano - Materials, Technology and Applications, Hanoi, Vietnam, October 15-17, (2014).
  • 15. In-plane oriented InAs nanowire field-effect transistors formed by combination of selective area molecular beam epitaxy and wet-etch thinning process,C. T. Nguyen and M. Akabori,2014 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices, Kanazawa, Japan, July 1-3 (2014)
  • 16. Quantum Hall effect in In0.75Ga0.25As/In0.75A0.25lAs two-dimensional electron gas bilayer samples,S. Hidaka, H. Iwase, M. Akabori, S. Yamada, Y. Imanaka, and T. Takamasu,the 20th International Conference on Electron Properties of Two-Dimensional Systems, Wroclaw, Poland, July 1-5 (2013).
  • 17. In-plane oriented InAs nanowire formation by selsctive area molecular beam epitaxy on GaAs (211)B substrates,M. Akabori, T. Murakami, and S. Yamada,the 16th International Conference on Modulated Semiconductor Structures, Wroclaw, Poland, July 1-5 (2013).
  • 18. Verification of electrical spin injection into InGaAs two-dimensional electron gas from CoFe electrode by four-terminal non-local geometry,S. Hidaka, T. Kondo, M. Akabori, and S. Yamada,the 31st International Conference on the Physics of Semiconductors, Zurich, Switzerland, July 29-August 3 (2012).
  • 19. Electron mobility anisotropy in InAs/GaAs(001,S. P. Le, M. Akabori, and T. Suzuki,the 17th International Conference on Molecular Beam Epitaxy, Nara Japan, September 23-28 (2012).
  • 20. Low temperature anisotropic transport and related structure analysis in InGaAs two-dimensional electron gas bilayer system,W. Wei, S. Hidaka, H. Iwase, M. Akabori, S. Yamada, H. Hirayama, and Y. Suzuki,the 17th International Conference on Molecular Beam Epitaxy, Nara Japan, September 23-28 (2012).

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