Manoharan Muruganathan Assistant Professor
School of Materials Science（Department of Materials Science・Materials Characterization and Device）

Results 1-13 of about 13

• 1.　Fabrication and ab initio study of downscaled graphene nanoelectronic devices (Invited Talk)，H. Mizuta, M. Manoharan et al，SPIE Nanoscience + Engineering Conference on Nanotubes, Graphene and Associated Devices V， San Diego，August 2012
• 2.　Ab initio study of Phosphorus donor states in single dopant transistor with a stub-shaped channel，Le The Anh, Yohei Kuzuya, Daniel Moraru, Takeshi Mizuno, Manoharan Muruganathan, Michiharu Tabe, Hiroshi Mizuta，Conference on Computational Physics (CCP2012)，Kobe, Japan，Oct 17, 2012
• 3.　Transport characteristics of nanoconstricted grapheme with and without point defects，S. Deepak, H. Mizuta, M. Manoharan，The International Conference on Nano Science, Engineering and Technology (ICONSET2011)，Sathyabama，November 2011
• 4.　Impact of Point Defects in the Graphene Nanoribbon on its Transport Characteristics，M. Manoharan and Hiroshi Mizuta，Conference on Computational Physics (CCP2012), 111，Kobe, Japan，Oct 18, 2012
• 5.　Numerical Study on Electronic and Phononic Properties of Patterned Nano Pores Structured　Graphene，Nguyen Tien Cuong, Keiichi Kitagawa, M. Manoharan, Zakaria Moktadir, Faezeh Arab Hassani and Hiroshi Mizuta，Conference on Computational Physics (CCP2012)，Kobe, Japan，Oct 18, 2012
• 6.　Ab initio Study on Adsorption of Gas Molecules on Graphene Nanoribbons，Shinri Inoue, Nguyen Tien Cuong, M. Manoharan, Zakaria Moktadir, Dam Hieu Chi and Hiroshi Mizuta，Conference on Computational Physics (CCP2012), 131，Kobe, Japan，Oct 17, 2012
• 7.　Anomalous suppression of single-electron tunnelling observed for Si nanobridge transistors with a suspended quantum dot cavity，J. Ogi, M. Manoharan, Y. Tsuchiya S. Oda and H. Mizuta，IEEE SILICON NANOELECTRONICS WORKSHOP，Hawaii，2008
• 8.　Silicon radio frequency single-electron transistors operating at above 4.2 K，M. Manoharan, Y. Tsuchiya S. Oda and H. Mizuta，International Conference on Solid State Devices and Materials，Ibaraki，2008
• 9.　Observation of strongly-coupled multiple-dot characteristics in the dual recess structured silicon channel with different oxidation conditions，M. Manoharan, Yoshiyuki Kawata, Yoshishige Tsuchiya, Hiroshi Mizuta, and Shunri Oda，IEEE SILICON NANOELECTRONICS WORKSHOP，Kyoto，2007
• 10.　Is it possible to avoid uncontrolled multiple tunnel junctions induced by random dopants in heavily-doped silicon single-electron transistors?，M. Manoharan, Y. Tsuchiya S. Oda and H. Mizuta，IEEE SILICON NANOELECTRONICS WORKSHOP，Hawaii，2008
• 11.　Transport Characteristics of Nanoconstricted Graphene with and without point defects，Deepak S., Hiroshi Mizuta, Manoharan M.，International Conference on Nano Science, Engineering and Technology，India，2011
• 12.　Fabrication and Characterization of Double Single-Electron Transistors as a Readout for Charge Qubits，Yoshiyuki Kawata, M. Manoharan, Yoshishige Tsuchiya, Hiroshi Mizuta, and Shunri Oda，IEEE Silicon Nanoelectronics Workshop，Kyoto，2007
• 13.　Hybrid simulation of the RF-SET and its sensitivity analysis，M. Manoharan, Hiroshi Mizuta, and Shunri Oda，International Conference on Solid State Devices and Materials，Yokohama，2006