Equipment

 

Ultrahigh Vacuum Chemical Vapor Epitaxy system equipped with Reflection High Energy Electron Diffraction

Our original design CVE system is used to grow diboride films from borohydride. Since the base pressure is better than 10-8 Pa, highly pure films could be grown. The film growth is monitored in real time using RHEED.

Ultrahigh Vacuum Molecular Beam Epitaxy - Scanning Probe Microscopy system equipped with X-ray and Ultraviolet Photoelectron Spectroscopy

Possible to grow GaN films and ZrB2 films, and observe their surface in atomic resolution without exposing to air. Atomic resolution could be achieved in both STM and NCAFM.

Synchrotron facilities frequently used by our group:

BL-18A (ISSP, The Univ. of Tokyo) in KEK-PF, Tsukuba, Japan

Measurements are carried out in collaboration with Rainer Friedlein group (School of Materials Science, JAIST).

Unique research tools in our group:

Center for Functional Nanomaterials XPEEM-LEEM endstation at beamline U5UA in National Synchrotron Light Source, Brookhaven National Laboratory, USA

Measurements are carried out in collaboration with Dr. Jurek Sadowki (CFN, BNL) and Rainer Friedlein group (School of Materials Science, JAIST).












AF

YYT

JTS

RF

BL-13A/B in KEK-PF, Tsukuba, Japan

Measurements are carried out in collaboration with Rainer Friedlein group (School of Materials Science, JAIST).

 

RF

AF

KA

Ultrahigh Vacuum Variable Temperature Scanning Probe Microscopy system equipped with Low Energy Electron Diffraction - Auger Electron Spectroscopy

Atomic resolution imaging at temperature range of 100K to 1000K is possible with both STM and NCAFM.