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Kenichi Haga Assistant Professor
School of Materials Science、Applied Physics Area

■Degrees

B.S. from Tokyo Institute of Technology(2009), M.S. from Tokyo Institute of Technology(2011), Ph.D. from Tokyo Institute of Technology(2014)

■Specialties

Electronic devices, Oxide materials, Solution process

■Publications

◇Published Papers

  • Investigation of Nb-Zr-O thin film using sol-gel coating,Joonam Kim, Ken-ichi Haga, and Eisuke Tokumitsu,Journal of Semiconductor Technology and Science , 245,Vol. 17,No. 2,2017/04/
  • Fabrication of MoS2 thin films on oxide-dielectric-covered substrates by chemical solution process,Joonam Kim, Koichi Higashimine, Ken-ichi Haga, and Eisuke Tokumitsu,Physica Status Solidi (b) Vol. 254 No. 2, 1600536 (2017),254,2,1600536,2017/02/16
  • Relationship between source/drain-contact structures and switching characteristics in oxide-channel ferroelectric-gate thin-film transistors,Ken-ichi Haga, Yuuki Nakada, Dan Ricinschi, and Eisuke Tokumitsu,Japanease Journal of Applied Physics,53,9S,09PA07-1,2014/09/03

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◇Lectures and Presentations

  • Crystallization Mechanism and Crystallographic Orientation Control of (Bi,La)4Ti3O12 (BLT) Films by Sol-gel technique,Eisuke Tokumitsu and Ken-ichi Haga,13th European Meeting on Ferroelectricity (EMF 2015), Porto, June 28-July 3, 2015 oral
  • Characterization of In2O3 Channel Ferroelectric-Gate Thin Film Transistors,Ken-ichi Haga, Yuuki Nakada, Dan Ricinschi, and Eisuke Tokumitsu,10th International Thin-Film Transistor Conference (ITC 2014),Delft Univ. of Tech., Delft, The Netherlands,2014/01/23-24