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Masashi Akabori Associate Professor
School of Materials Science、Applied Physics Area

Results 1-20 of about 60

  • 1. Three-dimensional lattice rotation in GaAs nanowire growth on hydrogen−silsesquioxane covered GaAs (001) using molecular beam epitaxy,D. Q. Tran, H. T. Pham, K. Higashimine, Y. Oshima and M. Akabori,Physica E: Low-dimensional Systems and Nanostructures,99,58-62,2018/02/20
  • 2. Enhanced ferromagnetism of ZnO@Co/Ni hybrid core@shell nanowires grown by electrochemical deposition method,H. T. Pham, T. D. Nguyen, Md. E. Islam, D. Q. Tran, M. Akabori,RSC Advances,Vol. 8,pp. 632-639,2018
  • 3. Nitrogen GFIS-FIB secondary electron imaging: A first look,M. E. Schmidt, A. Yasaka, M. Akabori, H. Mizuta,Microscopy and Microanalysis,Vol. 23,pp. 758-768,2017
  • 4. Three-dimensional lattice rotation in GaAs nanowire growth on hydrogen-silsesquioxane covered GaAs (001) using molecular beam epitaxy,D. Q. Tran, H. T. Pham, K. Higashimine, Y. Ohshima, M. Akabori,Physica E,Vol. 99,pp. 58-62,2018
  • 5. In-plane isotropic magnetic and electrical properties of MnAs/InAs/GaAs(111)B hybrid structure,Md. E. Islam and M. Akabori,Physica B,Vol. 532,pp. 95-98,2018
  • 6. Structural, optical and electrical properties of well-ordered ZnO nanowires grown on (111) oriented Si, GaAs and InP substrates by electrochemical deposition method,H. T. Pham, T. D. Nguyen, D. Q. Tran, M. Akabori,Materials Research Express,Vol. 4,pp. 055002-1-10,2017
  • 7. Band-like transport in highly crystalline graphene films from defective graphene oxides,R. Negishi, M. Akabori, T. Ito, Y. Watanabe, and Y. Kobayashi,Scientific Reports,Vol. 6,pp. 28936-1-10,2016
  • 8. Characterization of spin-orbit coupling in gated wire structures using Al2O3/In0.75Ga0.25As/In0.75Al0.25As inverted heterojunctions,T. Ohori, M. Akabori, S. Hidaka and S. Yamada,J. Appl. Phys.,120,142123,2016
  • 9. Growth and magnetic properties of MnAs/InAs hybrid structure on GaAs(111)B,Md. E. Islam and M. Akabori,J. Crystal Growth,Vol. 463,pp. 86-89,2017
  • 10. Interaction study of nitrogen ion beam with silicon,M. E. Schmidt, X. Zhang, Y. Oshima, L. T. Anh, A. Yasaka, T. Kanzaki, M. Muruganathan, M. Akabori, T. Shimoda, and H. Mizuta,J. Vac. Sci. Tech. B,Vol. 35,pp. 03D101-1-7,2017
  • 11. Hydrogen intercalation: An approach to eliminate silicon dioxide substrate doping to graphene,T. Iwasaki, J. Sun, N. Kanetake, T. Chikuba, M. Akabori, M. Muruganathan, and H. Mizuta,Appl. Phys. Express,Vol. 8,pp. 015101-1-4,2015
  • 12. High-In-content InGaAs quantum point contacts fabricated using focused ion beam system equipped with N2 gas field ion source,M. Akabori, S. Hidaka, S. Yamada, T. Kozakai, O. Matsuda, and A. Yasaka,Jpn. J. Appl. Phys., 53,pp. 118002-1-3,2014
  • 13. Verification of electrical spin injection into InGaAs two-dimensional electron gas from CoFe electrode by four-terminal non-local geometry,S. Hidaka, T. Kondo, M. Akabori, and S. Yamada,AIP Conf. Proc,1566,329,2013
  • 14. Magneto-transport properties of InAs nanowires laterally-grown by selective area molecular beam epitaxy on GaAs (110) masked substrates,M. Akabori and S. Yamada,AIP Conf. Proc,1566,219,2013
  • 15. Realization of In0.75Ga0.25As two-dimensional electron gas bilayer system for spintronics devices based on Rashba spin-orbit interaction,M. Akabori, S. Hidaka, H. Iwase, S. Yamada, and U. Ekenberg,J. Appl. Phys,Vol. 112,pp. 113711-1-6,2012
  • 16. Electron distribution and scattering in InAs films on low-k flexible substrates,C. T. Nguyen, H.-A. Shih, M. Akabori, and T. Suzuki,Appl. Phys. Lett,Vol. 100,pp. 232103-1-4,2012
  • 17. High-efficient long spin coherence electrical spin injection in CoFe/InGaAs two-dimensional electron gas lateral spin-valve devices,S. Hidaka, M. Akabori, and S. Yamada,Appl. Phys. Express,Vol. 5,pp. 113001-1-3,2012
  • 18. Selective area molecular beam epitaxy of InAs on GaAs (110) masked substrates for direct fabrication of planar nanowire field-effect transistors,M. Akabori, T. Murakami, and S. Yamada,J. Crystal Growth,Vol. 345,pp. 22-26,2012
  • 19. Application of sputtering-deposited AlN films to gate dielectric for AlGaN/GaN metal-insulator-semiconductor heterojunction field-effect transistor,H.-A. Shih, M. Kudo, M. Akabori, and T. Suzuki,Jpn. J. Appl. Phys.,Vol. 51,pp. 02BF01-1-4,2012
  • 20. Fabrication and analysis of AlN/GaAs(001) and AlN/Ge/GaAs(001) metal-insulator-semiconductor structures,M. Kudo, H.-A. Shih, M. Akabori, and T. Suzuki,Jpn. J. Appl. Phys.,Vol. 51,pp. 02BF07-1-5,2012

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