Selected publications (since 2006)
シリセン：ケイ素で出来たグラフェン？
高村（山田）由起子、アントワーヌ•フロランス、ライナー•フリードライン、尾崎泰助
日本物理学会誌 第68巻 305-308 (2013)
Featured on the front cover of May issue Look who had designed the cool cover!
Stacks of nucleic acids as molecular wires: Direct measurement of the intermolecular band dispersion in multilayer guanine assemblies
R. Friedlein, Y. Wang, A. Fleurence, F. Bussolotti, Y. Ogata, and Y. Yamada-Takamura
Journal of the American Chemical Society 132, 12808-12810 (2010)
Surface electronic structure of ZrB2 buffer layers for GaN growth on Si wafers
Y. Yamada-Takamura, F. Bussolotti, A. Fleurence, S. Bera, and R. Friedlein
Applied Physics Letters 97, 073109 (2010)
Selected for the August 30, 2010 issue of Virtual Journal of Nanoscale Science & Technology
Scanning tunneling microscopy investigations of the epitaxial growth of ZrB2 on Si(111)
Antoine Fleurence and Yukiko Yamada-Takamura
Growth of single-crystalline zirconium diboride thin film on sapphire
S. Bera, Y. Sumiyoshi, and Y. Yamada-Takamura
Intermolecular band dispersions in single-crystalline anthracene multilayer films
F. Bussolotti, Y. Yamada-Takamura, and R. Friedlein
Silicon-on-insulator for symmetry-converted growth
Y. Fujikawa, Y. Yamada-Takamura, G. Yoshikawa, T. Ono, M. Esashi, P. P. Zhang, M. G. Lagally, and T. Sakurai
Effect of nitridation on the growth of GaN on ZrB2(0001)/Si(111) by molecular beam epitaxy
Zhi-Tao Wang, Y. Yamada-Takamura, Y. Fujikawa, T. Sakurai, Q. K. Xue, J. Tolle, J. Kouvetakis, and I. S. T. Tsong
シリコン基板への単一極性GaN成長を可能にするエピタキシャルZrB2薄膜
高村（山田）由起子、王治涛、藤川安仁、櫻井利夫
日本物理学会誌 第61巻 521-524 (2006) Open Access
Experimental evidence for epitaxial silicene on diboride thin films
A. Fleurence, R. Friedlein, T. Ozaki, H. Kawai, Y. Wang, and Y. Yamada-Takamura
Physical Review Letters 108, 245501 (2012) Open Access
Selected for the June 25, 2012 issue of Virtual Journal of Nanoscale Science & Technology
See also: Press release (日本語, English), 共同通信, 日刊工業新聞, 日経産業新聞, Nanonet (日本語, English), KEK物構研トピックス, Physics World, Cosmos Magazine, ZDNet, Nature
Tuning of silicene-substrate interactions with potassium adsorption
R. Friedlein, A. Fleurence, J. T. Sadowski, and Y. Yamada-Takamura
Unfolding method for first-principles LCAO electronic structure calculations
C.-C. Lee, Y. Yamada-Takamura, and T. Ozaki
Mechanisms of parasitic crystallites formation in ZrB2(0001) buffer layer grown on Si(111)
A. Fleurence, W. Zhang, C. Hubault, and Y. Yamada-Takamura
First-principles study on competing phases of silicene: Effect of substrate and strain
C.-C. Lee, A. Fleurence, R. Friedlein, Y. Yamada-Takamura, and T. Ozaki
Physical Review B 88, 165404 (2013) Open Access
シリセン ー π電子を有するモノレイヤーケイ素シートの化学
ライナー•フリードライン、高村（山田）由起子
化学と工業 第66巻 900-902 (2013)
Microscopic origin of the π states in epitaxial silicene
A. Fleurence, Y. Yoshida, C.-C. Lee, T. Ozaki, Y. Yamada-Takamura, and Y. Hasegawa
Core level excitations—A fingerprint of structural and electronic properties of epitaxial silicene
R. Friedlein, A. Fleurence, K. Aoyagi, M. P. de Jong, H. Van Bui, F. B. Wiggers, S. Yoshimoto, T. Koitaya, S. Shimizu, H. Noritake, K. Mukai. J. Yoshinobu, and Y. Yamada-Takamura
Interaction of epitaxial silicene with overlayers formed by exposure to Al atoms and O2 molecules
R. Friedlein, H. Van Bui, F. B. Wiggers, Y. Yamada-Takamura, A. Y. Kovalgin and M. P. de Jong
Band structure of silicene on zirconium diboride (0001) thin-film surface: Convergence of experiment and calculations in the one-Si-atom Brillouin zone
C.-C. Lee, A. Fleurence, Y. Yamada-Takamura, T. Ozaki, and R. Friedlein
Diverse forms of bonding in two-dimensional Si allotropes: Nematic orbitals in the MoS2
structure
F. Gimbert, C.-C. Lee, R. Friedlein, A. Fleurence, Y. Yamada-Takamura, and T. Ozaki
Physical Review B 90, 165423 (2014) Open Access
Avoiding critical-point phonon instabilities in two-dimensional materials: The origin of the stripe formation in epitaxial silicene
C.-C. Lee, A. Fleurence, R. Friedlein, Y. Yamada-Takamura, and T. Ozaki
Progress in the materials science of silicene
Y. Yamada-Takamura and R. Friedlein
Science and Technology of Advanced Materials 15, 064404 (2014) Open Access
Featured on the front cover of the printed focus issue and also in the Highlights of 2014
On the feasibility of silicene encapsulation by AlN deposited using an atomic layer deposition process
H. Van Bui, F. B. Wiggers, R. Friedlein, Y. Yamada-Takamura, A. Y. Kovalgin, and M. P. de Jong
Electronic properties of epitaxial silicene on diboride thin films
R. Friedlein and Y. Yamada-Takamura
Journal of Physics: Condensed Matter 27, 203201 (2015) Open Access
A nitride-based epitaxial surface layer formed by ammonia treatment of silicene-terminated ZrB2
F. B. Wiggers, H. Van Bui, R. Friedlein, Y. Yamada-Takamura, J. Schmitz, A. Y. Kovalgin, and M. P. de Jong
Single-domain epitaxial silicene on diboride thin films
A. Fleurence, T. G. Gill, R. Friedlein, J. T. Sadowski, K. Aoyagi, M. Copel, R. M. Tromp, C. F. Hirjibehedin, and Y. Yamada-Takamura
Insights into the spontaneous formation of silicene sheet on diboride thin films
A. Fleurence and Y. Yamada-Takamura
Applied Physics Letters 110, 041601 (2017) See also: press release
Metallic atomically-thin layered silicon epitaxially grown on silicene/ZrB2
T. G. Gill, A. Fleurence, B. Warner, H. Prüser, R. Friedlein, J. T. Sadowski, C. F. Hirjibehedin, and Y. Yamada-Takamura
2D Materials 4, 021015 (2017) Open Access See also: press release, KEK物構研トピックス
Single-particle excitation of core states in epitaxial silicene
C.-C. Lee, J. Yoshinobu, K. Mukai, S. Yoshimoto, H. Ueda, R. Friedlein, A. Fleurence, Y. Yamada-Takamura, and T. Ozaki
Encapsulation of epitaxial silicene on ZrB2 with NaCl
F. B. Wiggers, Y. Yamada-Takamura, A. Y. Kovalgin, and M. P. de Jong
Selenidation of epitaxial silicene on ZrB2
F. B. Wiggers, Y. Yamada-Takamura, A. Y. Kovalgin, and M. P. de Jong
Guided molecular assembly on a locally reactive 2D material
B. Warner, T. G. Gill, V. Caciuc, N. Atodiresei, A. Fleurence, Y. Yoshida, Y. Hasegawa, S. Blügel, Y. Yamada-Takamura, and C. F. Hirjibehedin
Advanced Materials 29, 1703929 (2017) Open Access See also: press release
Atomistic study of GaSe/Ge(111) interface formed through van der Waals epitaxy
T. Yonezawa, T. Murakami, K. Higashimine, A. Fleurence, Y. Oshima, and Y. Yamada-Takamura
Surface and Interface Analysis 51, 95-99 (2019) Free Access
Nanomechanical Properties of Epitaxial Silicene Revealed by Noncontact Atomic Force Microscopy
M. Nogami, A. Fleurence, Y. Yamada-Takamura, and M. Tomitori
Advanced Materials Interfaces 6, 1801278 (2019)
Featured on the inside back cover
Van der Waals integration of silicene and hexagonal boron nitride
F. B. Wiggers, A. Fleurence, K. Aoyagi, T. Yonezawa, Y. Yamada-Takamura, H. Feng, J. Zhuang, Y. Du, A. Y. Kovalgin and M. P. de Jong
Hidden mechanism for embedding the flat bands of Lieb, kagome, and checkerboard lattices in other structures
C.-C. Lee, A. Fleurence, Y. Yamada-Takamura, and T. Ozaki
Formation of hBN monolayers through nitridation of epitaxial silicene on diboride thin films
K. Aoyagi, F. B. Wiggers, R. Friedlein, F. Gimbert, A. Fleurence,T. Ozaki and Y. Yamada-Takamura
Formation of BN-covered silicene on ZrB2/Si(111) by adsorption of NO and thermal processes
J. Yoshinobu, K. Mukai, H. Ueda, S. Yoshimoto, S. Shimizu, T. Koitaya, H. Noritake, C.-C. Lee, T. Ozaki, A. Fleurence, R. Friedlein, and Y. Yamada-Takamura
Time-resolved X-ray photoelectron diffraction using an angle-resolved time-of-flight electron analyzer
A. K. R. Ang, Y. Fukatsu, K. Kimura, Y. Yamamoto, T. Yonezawa, H. Nitta, A. Fleurence, S. Yamamoto, I. Matsuda, Y. Yamada-Takamura, and K. Hayashi
Emergence of nearly flat bands through a kagome lattice embedded in an epitaxial two-dimensional Ge layer with a bitriangular structure
A. Fleurence, C.-C. Lee, R. Friedlein, , Y. Fukaya, S. Yoshimoto, K. Mukai, H. Yamane, N. Kosugi, J. Yoshinobu, T. Ozaki, and Y. Yamada-Takamura
Physical Review B 102, 201102(R) (2020) Open Access See also the released news
First-principles study on the stability and electronic structure of monolayer GaSe with trigonal-antiprismatic structure
H. Nitta, T. Yonezawa, A. Fleurence, Y. Yamada-Takamura, and T. Ozaki
Physical Review B 102, 235407 (2020) Open Access See also the released news
Band engineering in an epitaxial two-dimensional honeycomb Si6-xGex alloy
A. Fleurence, Y. Awatani, C. Huet, F. B. Wiggers, S. M. Wallace, T. Yonezawa, and Y. Yamada-Takamura
Physical Review Materials 5, L011001 (2021) Open Access
Adatom-induced dislocation annihilation in epitaxial silicene
Antoine Fleurence and Yukiko Yamada-Takamura
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